Two Octave Phemt Power Amplifier for EW Applications

Two 4.5-18 GHz MMIC amplifiers have been designed and fully tested. They have been fabricated using the Power pHemt process available at TriQuint Semiconductor, Texas. The first amplifier is a one stage distributed power amplifier which has been power optimised and exhibits 1W CW output power for a 6 dB associated gain. The second amplifier is a 2W three stage power amplifier with 20 dB gain. They are part of a first run launched in order to evaluate the different wideband structures and to improve linear and non linear models

HBT technology for high power X band and broadband amplification

For many applications like active phased array antennas for airborne radar, high power levels are required. To provide high performance and high manufacturing yield at a reduced coast, a MMIC solution is naturallyvery attractive. This can be achieved by choosing an efficient technology for active components. In this paper, a solution based on the HBT technology is presented. The 10W class, X band power amplifiers, and 1W, 4.5GHz-18GHz amplifiers were designed using the HBT technology HB20P from UMS. Based on the results obtained, this paper will discuss the capability and the technology improvements needed to reach the power and frequency bandwidth specifications with margin

Optimum design method of distributed power-FET amplifiers. Application to 2-18GHz MMIC exhibiting improved power performances

International audienceA suitable and effective design method of distributed power amplifiers, based on the optimum FET load requirement for power operation, is proposed in this paper. An analytical determination of the gate and drain line characteristic admittances provides both the initial values and right directions for an optimum design. The best trade-offs between wide band and high power operation have been investigated. To validate the method, a FET amplifier demonstrator with a gate periphery of 1.2 mm has been manufactured at the Texas Instruments foundry. The MMIC amplifier demonstrated state of the art power density performance of 340 mW/mm over the 2-18 GHz band associated with 14.2% power added efficiency, 26.5% drain efficiency and 26.1 dBm output power at 1 dB compression in CW operation

Large signal design criteria of distributed power amplifiers applied to 2-18GHz GaAs chip with high power density performances

International audienceA suitable and efficient design method of distributed power amplifiers, based on the optimum FET load requirement for power operation, is proposed in this paper. The analytical determination of the gate and drain line characteristic admittances provides both the initial values and right directions for an optimum design. The best tradeoffs between wide band and high power operation have been investigated. To validate the method, a FET amplifier demonstrator with a gate periphery of 1.2 mm has been manufactured at the Texas Instruments foundry. The MMIC amplifier demonstrated state of the art power density performance of 340 mW/mm over the 2-18 GHz band associated with 14.2% power added efficiency, 26.5% drain efficiency and 26.1 dBm output power at 1 dB compression in CW operatio

New Design Method of Non-Uniform Distributed Power Amplifiers. Application to a single stage 1W PHEMT MMIC

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Topologia optima de amplificadores distribuidos de potencia a MESFET

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Large signal design method of distributed power amplifiers applied to a 2-18GHz GaAs chip exhibiting high power density performances

International audienceA suitable large signal design method of distributed power amplifiers, based on the optimum FET load requirement for high power operation, is proposed in this article. The gate and drain line characteristic admittances are determined, providing both the initial values and right directions for an optimum design. To validate the proposed design method, a FET amplifier demonstrator with a gate periphery of 1.2 mm has been manufactured at the Texas Instruments foundry. The MMIC distributed amplifier demonstrated an improved power density performance of 340 mW/mm over the 2-18-GHz frequency band associated with a minimum of 13% power-added efficiency and 24% drain efficiency at 1-dB compression in CW operatio

New Design Method of Uniform and Non-Uniform Distributed Power Amplifiers

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A balanced sub-harmonic cold FET mixer for 40 GHz communication systems

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