Stiffening of Red Blood Cells Induced by Disordered Cytoskeleton Structures: A Joint Theory-experiment Study

The functions and elasticities of the cell are largely related to the structures of the cytoskeletons underlying the lipid bi-layer. Among various cell types, the Red Blood Cell (RBC) possesses a relatively simple cytoskeletal structure. Underneath the membrane, the RBC cytoskeleton takes the form of a two dimensional triangular network, consisting of nodes of actins (and other proteins) and edges of spectrins. Recent experiments focusing on the malaria infected RBCs (iRBCs) showed that there is a correlation between the elongation of spectrins in the cytoskeletal network and the stiffening of the iRBCs. Here we rationalize the correlation between these two observations by combining the worm-like chain (WLC) model for single spectrins and the Effective Medium Theory (EMT) for the network elasticity. We specifically focus on how the disorders in the cytoskeletal network affect its macroscopic elasticity. Analytical and numerical solutions from our model reveal that the stiffness of the membrane increases with increasing end-to-end distances of spectrins, but has a non-monotonic dependence on the variance of the end-to-end distance distributions. These predictions are verified quantitively by our AFM and micropipette aspiration measurements of iRBCs. The model may, from a molecular level, provide guidelines for future identification of new treatment methods for RBC related diseases, such as malaria infection.Comment: 8 pages, 4 figures; 3 supporting figure

The Propensity to Leave The Organization Among the Staff of Hotel Industry in Kuala Lumpur

Competence workers play a major role in boosting the hotel industries. However, high staff turnover tends to inhibit their growth. Therefore it is rather important that the managers identify and understand the factors related to the propensity to leave. The general objective of the study is to examine the predictors of hotel staff propensity to leave; and the mediating role of job satisfaction and organizational commitment. Specifically it aims to examine the relationship of research variables; and whether job satisfaction and organizational commitment mediate the effect of independent variables on the dependent variable. The study was conducted in the selected hotels in Kuala Lumpur by using a questionnaire. A total of 238 valid responses were obtained. Frequencies, descriptive, regression analysis, correlation and path analysis were used to analyze the data There are two parts in the findings, the relationship of study variables and the role mediating variables In the first part, findings show that self-esteem, emotional intelligence, role conflict, role ambiguity, work overload, perceived empowerment, perceived career advancement and perceived leader -staff relationship are significantly related to job satisfaction All these variables are also found to be significantly related to propensity to leave and organizational commitment except for emotional intelligence Job satisfaction and organizational commitment are also related to propensity to leave In the second part, findings show that job satisfaction mediates the effect of emotional intelligence, role ambiguity, work overload, perceived empowerment and perceived leader-staff relationship on propensity to leave Organizational commitment mediates the effect of self-esteem, role conflict, role ambiguity, work overload, perceived empowerment, perceived career advancement and perceived leader-staff relationship on propensity to leav

Photo-induced reduction of graphene oxide coating on optical waveguide and consequent optical intermodulation

Increased absorption of transverse-magnetic (TM) - polarised light by a graphene-oxide (GO) coated polymer waveguide has been observed in the presence of transverse-electric (TE) - polarised light. The GO-coated waveguide exhibits very strong photo-absorption of TE-polarised light - and acts as a TM-pass waveguide polariser. The absorbed TE-polarised light causes a significant temperature increase in the GO film and induces thermal reduction of the GO, resulting in an increase in optical-frequency conductivity and consequently increased optical propagation loss. This behaviour in a GO-coated waveguide gives the action of an inverted optical switch/modulator. By varying the incident TE-polarised light power, a maximum modulation efficiency of 72% was measured, with application of an incident optical power level of 57 mW. The GO-coated waveguide was able to respond clearly to modulated TE-polarised light with a pulse duration of as little as 100 μs. In addition, no wavelength dependence was observed in the response of either the modulation (TE-polarised light) or the signal (TM-polarised light)

Charge Offset Stability in Si Single Electron Devices with Al Gates

We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset drift instability

Orbital and valley state spectra of a few-electron silicon quantum dot

Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum dot using dynamic charge sensing and pulsed-voltage spectroscopy. The occupancy of the quantum dot is probed down to the single-electron level using a nearby single-electron transistor as a charge sensor. The energy of the first orbital excited state is found to decrease rapidly as the electron occupancy increases from N=1 to 4. By monitoring the sequential spin filling of the dot we extract a valley splitting of ~230 {\mu}eV, irrespective of electron number. This indicates that favorable conditions for qubit operation are in place in the few-electron regime.Comment: 4 figure