Psychometric properties of sensory processing and self-regulation checklist (SPSRC)

Copyright © 2019 Cynthia Y. Y. Lai et al. Background. Some children may encounter difficulties in processing sensory stimuli, which may affect their ability to participate in activities of daily living. Self-regulation abilities may also affect children on how to process different sensory experiences. The Sensory Processing and Self-Regulation Checklist (SPSRC) was developed as a single, parent-reported instrument for the examination of sensory processing and self-regulation difficulties in children. Aims. This study is aimed at evaluating the psychometric properties of the SPSRC and examine the patterns of self-regulation and sensory processing in children with and without autism spectrum disorder (ASD). Methods and Procedures. The contents of the SPSRC were validated by a group of experts, and a field test was subsequently conducted to examine the reliability and validity of this instrument in a sample of 997 typically developing children and 78 children with ASD. Outcomes and Results. The results of the validation and field test analyses suggest that the SPSRC exhibits high internal consistency, good intrarater reliability, and a valid ability to measure and discriminate sensory processing and self-regulation in children aged 3-8 years with and without ASD. Conclusions and Implications. The current results supported the reliability and validity of SPSRC to assess a child's sensory processing and self-regulation performance in activities of daily living. The study findings warrant further investigation to compare the performance of the SPSRC with laboratory-based tests, as this would better elucidate sensory responsivity in children with sensory modulation disorders from both clinical and research perspectives.Social Welfare Development Fund, HKSAR

Optical properties of diffused AlGaAs/GaAs multiple quantum wells and their applications in high power laser

We will present results for an Al0.24Ga0.76As/GaAs diffused multiple quantum well with five periods of 100/100Å thick welVbarrier layers grown in between Al0.24Ga0.76As guiding layers and cladded on top by a 1µm thick p-Al0.44Ga0.56As layer and on the bottom by an n-Al0.44Ga0.56As layer of equal thickness, on a n+-GaAs buffer layer and n+-GaAs substrate. Vacancy enhanced QW diffusion is employed where a 2000Å thick layer of Si02 is deposited on top of the diffused multiple quantum well structure. Photoluminescence measurement and photovoltage measurement at room temperature show that after rapid thermal annealing for 30 sec at 1000 °C to 1040 °C, a bandgap shift of 30 nm is obtained for the exciton edge. Further, this technique is applied to a ridge waveguide laser structure to make two windows for high power output up to 36 mW. This device shows that the diffusion process may have practical applications.published_or_final_versio

Migration influences on the allostatic load of children : systematic review protocol

202012 bcrcVersion of RecordPublishe

Examining the role of attention deficits in the social problems and withdrawn behavior of children with sluggish cognitive tempo symptoms

202110 bcvcVersion of RecordPublishe