Measuring many-body effects in carbon nanotubes with a scanning tunneling microscope

Electron-electron interactions and excitons in carbon nanotubes are locally measured by combining Scanning tunneling spectroscopy and optical absorption in bundles of nanotubes. The largest gap deduced from measurements at the top of the bundle is found to be related to the intrinsic quasi-particle gap. From the difference with optical transitions, we deduced exciton binding energies of 0.4 eV for the gap and 0.7 eV for the second Van Hove singularity. This provides the first experimental evidence of substrate-induced gap renormalization on SWNTs

Symmetry-selected spin-split hybrid states in C60_{60}/ferromagnetic interfaces

The understanding of orbital hybridization and spin-polarization at the organic-ferromagnetic interface is essential in the search for efficient hybrid spintronic devices. Here, using first-principles calculations, we report a systematic study of spin-split hybrid states of C$_{60}$ deposited on various ferromagnetic surfaces: bcc-Cr(001), bcc-Fe(001), bcc-Co(001), fcc-Co(001) and hcp-Co(0001). We show that the adsorption geometry of the molecule with respect to the surface crystallographic orientation of the magnetic substrate as well as the strength of the interaction play an intricate role in the spin-polarization of the hybrid orbitals. We find that a large spin-polarization in vacuum above the buckyball can only be achieved if the molecule is adsorbed upon a bcc-(001) surface by its pentagonal ring. Therefore bcc-Cr(001), bcc-Fe(001) and bcc-Co(001) are the optimal candidates. Spin-polarized scanning tunneling spectroscopy measurements on single C$_{60}$ adsorbed on Cr(001) and Co/Pt(111) also confirm that both the symmetry of the substrate and of the molecular conformation have a strong influence on the induced spin polarization. Our finding may give valuable insights for further engineering of spin filtering devices through single molecular orbitals.Comment: 10 pages, 9 figure

Localized state and charge transfer in nitrogen-doped graphene

Nitrogen-doped epitaxial graphene grown on SiC(000?1) was prepared by exposing the surface to an atomic nitrogen flux. Using Scanning Tunneling Microscopy (STM) and Spectroscopy (STS), supported by Density Functional Theory (DFT) calculations, the simple substitution of carbon by nitrogen atoms has been identified as the most common doping configuration. High-resolution images reveal a reduction of local charge density on top of the nitrogen atoms, indicating a charge transfer to the neighboring carbon atoms. For the first time, local STS spectra clearly evidenced the energy levels associated with the chemical doping by nitrogen, localized in the conduction band. Various other nitrogen-related defects have been observed. The bias dependence of their topographic signatures demonstrates the presence of structural configurations more complex than substitution as well as hole-doping.Comment: 5 pages, accepted in PR

Denoising Scanning Tunneling Microscopy Images of Graphene with Supervised Machine Learning

Machine learning (ML) methods are extraordinarily successful at denoising photographic images. The application of such denoising methods to scientific images is, however, often complicated by the difficulty in experimentally obtaining a suitable expected result as an input to training the ML network. Here, we propose and demonstrate a simulation-based approach to address this challenge for denoising atomic-scale scanning tunneling microscopy (STM) images, which consists of training a convolutional neural network on STM images simulated based on a tight-binding electronic structure model. As model materials, we consider graphite and its mono- and few-layer counterpart, graphene. With the goal of applying it to any experimental STM image obtained on graphitic systems, the network was trained on a set of simulated images with varying characteristics such as tip height, sample bias, atomic-scale defects, and non-linear background. Denoising of both simulated and experimental images with this approach is compared to that of commonly-used filters, revealing a superior outcome of the ML method in the removal of noise as well as scanning artifacts - including on features not simulated in the training set. An extension to larger STM images is further discussed, along with intrinsic limitations arising from training set biases that discourage application to fundamentally unknown surface features. The approach demonstrated here provides an effective way to remove noise and artifacts from typical STM images, yielding the basis for further feature discernment and automated processing.Comment: Includes S

Selective control of molecule charge state on graphene using tip-induced electric field and nitrogen doping

The combination of graphene with molecules offers promising opportunities to achieve new functionalities. In these hybrid structures, interfacial charge transfer plays a key role in the electronic properties and thus has to be understood and mastered. Using scanning tunneling microscopy and ab initio density functional theory calculations, we show that combining nitrogen doping of graphene with an electric field allows for a selective control of the charge state in a molecular layer on graphene. On pristine graphene, the local gating applied by the tip induces a shift of the molecular levels of adsorbed molecules and can be used to control their charge state. Ab initio calculations show that under the application of an electric field, the hybrid molecule/graphene system behaves like an electrostatic dipole with opposite charges in the molecule and graphene sub-units that are found to be proportional to the electric field amplitude, which thereby controls the charge transfer. When local gating is combined with nitrogen doping of graphene, the charging voltage of molecules on nitrogen is greatly lowered. Consequently, applying the proper electric field allows one to obtain a molecular layer with a mixed charge state, where a selective reduction is performed on single molecules at nitrogen sites. The local gating applied by a tip induces a shift of the energy levels of molecules adsorbed on graphene. A team led by Jerome Lagoute at Universite Paris Diderot investigated the interplay between the charge state of molecules on pristine and doped-graphene, and the tip-induced electric fields in scanning tunneling microscopy experiments. The tip-induced electric field was found to shift the molecular levels of tetracyanoquinodimethane molecules on graphene, leading to a change of charge state at negative bias. Ab initio calculations indicated that the molecule-on-graphene hybrid structure can be regarded as an electrostatic dipole, hence the charge transfer and associated electronic charge in the molecule and graphene could be tuned by the electric field. Furthermore, inserting nitrogen atom dopants allowed shifting the energy levels of single molecules absorbed directly on the electron-donating point defects

Probing structural and electronic properties of h-BN by HRTEM and STM

International audienceAfter the discovery of graphene and its consequences in the field of nanoscience and nanomaterials, there has been a growing interest in 2D materials and also their vertical stacking due to unique properties and potential applications.[1] For instance, it was shown the transport properties of exfoliated graphene supported by hexagonal boron nitride (h-BN) could approach the intrinsic graphene limits.[2] Nevertheless, studying the structural properties of 2D materials and 2D heterostructures is crucial to understand their physical and chemical properties. Our motivations have been to exploit state of the art aberration-corrected high resolution transmission electron microscopy (HRTEM) and scanning tunneling microscopy (STM) to study the structure and electronic properties of graphene (G), h-BN and G/h-BN heterostructures. HRTEM analyses were conducted with a JEOL ARM microscope equipped together with a cold FEG, an aberration corrector for the objective lens and a One view camera (Gatan). Notably, we used high-speed atomic-scale imaging to study with unprecedented dynamics (up to 25 fps) the nucleation and growth mechanisms of triangular holes in h-BN under beam irradiation (Figure 1). The direct observation of B and N atom sputtering and surface reconstruction processes allow understanding how the triangular shape and orientation of holes are maintained during the growth. Interestingly, by studying the effects of the electron dose and the number of BN layers, we demonstrate that these atomic-scale processes are simultaneously driven by kinetic and thermodynamic effects. Further works are in progress to study the stability of h-BN/G stacking under electron-beam irradiation. STM analyses were carried out with low temperature STM at 4 K, on 2D heterostructures that consist in a few layers of graphene doped with nitrogen on thick exfoliated flakes of BN deposited on SiO 2. Remarkably, we show that STM allows identifying and characterizing ionization defects within the BN flakes below the graphene layers (Figure 2). This study opens new avenues to probe the electronic interactions between this two stacked materials

Molecular-scale dynamics of light-induced spin cross-over in a two-dimensional layer

Spin cross-over molecules show the unique ability to switch between two spin states when submitted to external stimuli such as temperature, light or voltage. If controlled at the molecular scale, such switches would be of great interest for the development of genuine molecular devices in spintronics, sensing and for nanomechanics. Unfortunately, up to now, little is known on the behaviour of spin cross-over molecules organized in two dimensions and their ability to show cooperative transformation. Here we demonstrate that a combination of scanning tunnelling microscopy measurements and ab initio calculations allows discriminating unambiguously between both states by local vibrational spectroscopy. We also show that a single layer of spin cross-over molecules in contact with a metallic surface displays light-induced collective processes between two ordered mixed spin-state phases with two distinct timescale dynamics. These results open a way to molecular scale control of two-dimensional spin cross-over layers

Grain Boundaries in Graphene on SiC(0001ˉ\bar{1}) Substrate

Grain boundaries in epitaxial graphene on the SiC(000$\bar{1}$) substrate are studied using scanning tunneling microscopy and spectroscopy. All investigated small-angle grain boundaries show pronounced out-of-plane buckling induced by the strain fields of constituent dislocations. The ensemble of observations allows to determine the critical misorientation angle of buckling transition $\theta_c = 19 \pm~2^\circ$. Periodic structures are found among the flat large-angle grain boundaries. In particular, the observed $\theta = 33\pm2^\circ$ highly ordered grain boundary is assigned to the previously proposed lowest formation energy structural motif composed of a continuous chain of edge-sharing alternating pentagons and heptagons. This periodic grain boundary defect is predicted to exhibit strong valley filtering of charge carriers thus promising the practical realization of all-electric valleytronic devices