74 research outputs found
Optical properties of tensilely strained Ge nanomembranes
Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are generally unsuitable for light emitting device applications because of their indirect- bandgap nature. This property currently limits the large-scale integration of electronic and photonic functionalities on Si chips. The introduction of tensile strain in Ge, which has the effect of lowering the direct conduction-band minimum relative to the indirect valleys, is a promising approach to address this challenge. Here we review recent work focused on the basic science and technology of mechanically stressed Ge nanomembranes, i.e., single-crystal sheets with thicknesses of a few tens of nanometers, which can sustain particularly large strain levels before the onset of plastic deformation. These nanomaterials have been employed to demonstrate large strain-enhanced photoluminescence, population inversion under optical pumping, and the formation of direct-bandgap Ge. Furthermore, Si-based photonic-crystal cavities have been developed that can be combined with these Ge nanomembranes without limiting their mechanical flexibility. These results highlight the potential of strained Ge as a CMOS-compatible laser material, and more in general the promise of nanomembrane strain engineering for novel device technologies.The Ge nanomembrane fabrication and characterization efforts were supported initially by DOE under Grant DE-FG02-03ER46028, and subsequently by AFOSR under Grant FA9550-14-1-0361. The development of the photonic-crystal cavities was supported by NSF under Grant ECCS-1308534. The initial photoluminescence studies were funded by NSF under Grant DMR-0907296. The contribution from several students and research scientists involved in this research at Boston University and the University of Wisconsin-Madison (including Cicek Boztug, Francesca Cavallo, Feng Chen, Xiaorui Cui, RB Jacobson, Debbie Paskiewicz, Jose Sanchez-Perez, Pornsatit Sookchoo, Faisal Sudradjat, Xiaowei Wang, and Jian Yin) is also gratefully acknowledged. (DE-FG02-03ER46028 - DOE; FA9550-14-1-0361 - AFOSR; ECCS-1308534 - NSF; DMR-0907296 - NSF)Published versio
Integrated Freestanding Single-Crystal Silicon Nanowires: Conductivity and Surface Treatment
Integrated freestanding single-crystal silicon nanowires with typical dimension of 100 nm × 100 nm × 5 µm are fabricated by conventional 1:1 optical lithography and wet chemical silicon etching. The fabrication procedure can lead to wafer-scale integration of silicon nanowires in arrays. The measured electrical transport characteristics of the silicon nanowires covered with/without SiO2 support a model of Fermi level pinning near the conduction band. The I–V curves of the nanowires reveal a current carrier polarity reversal depending on Si–SiO2 and Si–H bonds on the nanowire surface
Three-Omega Thermal-Conductivity Measurements with Curved Heater Geometries
The three-omega method, a powerful technique to measure the thermal
conductivity of nanometer-thick films and the interfaces between them, has
historically employed straight conductive wires to act as both heaters and
thermometers. When investigating stochastically prepared samples such as
two-dimensional materials and nanomembranes, residue and excess material can
make it difficult to fit the required millimeter-long straight wire on the
sample surface. There are currently no available criteria for how diverting
three-omega heater wires around obstacles affects the validity of the thermal
measurement. In this Letter, we quantify the effect of wire curvature by
performing three-omega experiments with a wide range of frequencies using both
curved and straight heater geometries on SiO/Si samples. When the heating
wire is curved, we find that the measured Si substrate thermal conductivity
changes by only 0.2%. Similarly, we find that wire curvature has no significant
effect on the determination of the thermal resistance of a 65 nm SiO
layer, even for the sharpest corners considered here, for which the largest
measured ratio of the thermal penetration depth of the applied thermal wave to
radius of curvature of the heating wire is 4.3. This result provides useful
design criteria for three-omega experiments by setting a lower bound for the
maximum ratio of thermal penetration depth to wire radius of curvature.Comment: 4 pages, 3 figure
Structure, Stability, and Origin of (2×n) Phases on Si(100)
Phases with (2×n) structure (6<n<10) can be formed on Si(100) by rapid quenching from high temperatures. The nominal (2×7) phase has been investigated by high-resolution low-energy electron diffraction. The structure involves two atomic levels, is metastable, and decays with first-order kinetics. The structure can be explained by ordering of excess missing-dimer defects, which apparently are present on the surface with any of the standard surface preparation techniques for Si(100)
Translation and manipulation of silicon nanomembranes using holographic optical tweezers
We demonstrate the use of holographic optical tweezers for trapping and manipulating silicon nanomembranes. These macroscopic free-standing sheets of single-crystalline silicon are attractive for use in next-generation flexible electronics. We achieve three-dimensional control by attaching a functionalized silica bead to the silicon surface, enabling non-contact trapping and manipulation of planar structures with high aspect ratios (high lateral size to thickness). Using as few as one trap and trapping powers as low as several hundred milliwatts, silicon nanomembranes can be rotated and translated in a solution over large distances
Long Phonon Mean Free Paths Observed in Cross-plane Thermal-Conductivity Measurements of Exfoliated Hexagonal Boron Nitride
Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high
in-plane thermal conductivity, useful optical properties, and serve as
dielectric encapsulation layers with low electrostatic inhomogeneity for
graphene devices. Despite the promising applications of hBN as a heat spreader,
the thickness dependence of the cross-plane thermal conductivity is not known,
and the cross-plane phonon mean free paths in hBN have not been measured. We
measure the cross-plane thermal conductivity of hBN flakes exfoliated from bulk
crystals. We find that the thermal conductivity is extremely sensitive to film
thickness. We measure a forty-fold increase in the cross-plane thermal
conductivity between 7 nm and 585 nm flakes at 295 K. We attribute the large
increase in thermal conductivity with increasing thickness to contributions
from phonons with long mean free paths (MFPs), spanning many hundreds of
nanometers in the thickest flakes. When planar twist interfaces are introduced
into the crystal by mechanically stacking multiple thin flakes, the cross-plane
thermal conductivity of the stack is found to be a factor of seven below that
of individual flakes with similar total thickness, thus providing strong
evidence that phonon scattering at twist boundaries limits the maximum phonon
MFPs. These results have important implications for hBN integration in
nanoelectronics and improve our understanding of thermal transport in
two-dimensional materials.Comment: 4 pages, 3 figure
Fabrication of ultrahigh-density nanowires by electrochemical nanolithography
An approach has been developed to produce silver nanoparticles (AgNPs) rapidly on semiconductor wafers using electrochemical deposition. The closely packed AgNPs have a density of up to 1.4 × 1011 cm-2 with good size uniformity. AgNPs retain their shape and position on the substrate when used as nanomasks for producing ultrahigh-density vertical nanowire arrays with controllable size, making it a one-step nanolithography technique. We demonstrate this method on Si/SiGe multilayer superlattices using electrochemical nanopatterning and plasma etching to obtain high-density Si/SiGe multilayer superlattice nanowires
Influence of surface properties on the electrical conductivity of silicon nanomembranes
Because of the large surface-to-volume ratio, the conductivity of semiconductor nanostructures is very sensitive to surface chemical and structural conditions. Two surface modifications, vacuum hydrogenation (VH) and hydrofluoric acid (HF) cleaning, of silicon nanomembranes (SiNMs) that nominally have the same effect, the hydrogen termination of the surface, are compared. The sheet resistance of the SiNMs, measured by the van der Pauw method, shows that HF etching produces at least an order of magnitude larger drop in sheet resistance than that caused by VH treatment, relative to the very high sheet resistance of samples terminated with native oxide. Re-oxidation rates after these treatments also differ. X-ray photoelectron spectroscopy measurements are consistent with the electrical-conductivity results. We pinpoint the likely cause of the differences
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