Mapping the depleted area of silicon diodes using a micro-focused X-ray beam

For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k{\Omega} cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source. For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied. The findings showed that the electric field in each diode under investigation extended beyond its bias ring and reached the dicing edge

Research and Design of a Routing Protocol in Large-Scale Wireless Sensor Networks

无线传感器网络，作为全球未来十大技术之一，集成了传感器技术、嵌入式计算技术、分布式信息处理和自组织网技术，可实时感知、采集、处理、传输网络分布区域内的各种信息数据，在军事国防、生物医疗、环境监测、抢险救灾、防恐反恐、危险区域远程控制等领域具有十分广阔的应用前景。 本文研究分析了无线传感器网络的已有路由协议，并针对大规模的无线传感器网络设计了一种树状路由协议，它根据节点地址信息来形成路由，从而简化了复杂繁冗的路由表查找和维护，节省了不必要的开销，提高了路由效率，实现了快速有效的数据传输。 为支持此路由协议本文提出了一种自适应动态地址分配算——ADAR（AdaptiveDynamicAddre...As one of the ten high technologies in the future, wireless sensor network, which is the integration of micro-sensors, embedded computing, modern network and Ad Hoc technologies, can apperceive, collect, process and transmit various information data within the region. It can be used in military defense, biomedical, environmental monitoring, disaster relief, counter-terrorism, remote control of haz...学位：工学硕士院系专业：信息科学与技术学院通信工程系_通信与信息系统学号：2332007115216

Experimental Study and Empirical Modelling of Long Term Annealing of the ATLAS18 Sensors

In order to continue the program of the LHC, the accelerator will be upgraded to the HL-LHC, which will have a design luminosity 10e3 cm^2 s^-1, an order of magnitude greater than the present machine. In order to meet the occupancy and radiation hardness requirements resulting from this increase in luminosity, the present ATLAS tracking detector must be replaced. The ATLAS Collaboration is constructing a new central tracking system based completely on silicon sensors. The system comprises an inner pixel detector, a barrel strip detector and an endcap strip detector. In order to satisfy the radiation hardness requirements we have developed a new n-in-p sensor design. Extensive studies have shown that it results in detectors which comfortably reach the required end-of-life performance. The latest sensor layouts prepared for preproduction, known as ATLAS18, implement this design. However, as well as knowing the performance after a given irradiation fluence, operational considerations require an understanding of the time development of the annealing, and resulting variation of the collected charge, of irradiated detectors at different temperatures. This requirement results from the fact that there are various proposed temperature profiles for the operation of the detector over the expected lifetime of 14 years. Here we describe the measurement of charge collection performance as a function of irradiated fluence and long term annealing time. We also describe a semi-empirical model based on these measurements which allows us to predict the end-of-life charge collection as a function of the temperature profile during operation of the detector. The use of the model to study the effect of annealing on the strip detector at a radius of 40 cm and an integrated irradiation fluence of 16e14 MeV neutron equiv. is presented. This methodology can be applied to other regions of the detector, such as the pixels

Characterization of the Polysilicon Resistor in Silicon Strip Sensors for ATLAS Inner Tracker as a Function of Temperature, Pre- And Post-Irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for $2029$, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of $4000\, \mathrm{fb}^{-1}$ means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of $1.6 \cdot 10^{15}$ $1\, \mathrm{MeV}$ $\mathrm{n_{eq}/cm^2}$ and $0.66\, \mathrm{MGy}$, respectively, including a safety factor of $1.5$. Radiation hard n${}^+$-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n${}^+$ implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We will discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips

Characterization of the Polysilicon Resistor in Silicon Strip Sensors for ATLAS Inner Tracker as a Function of Temperature, Pre- And Post-Irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected total integrated luminosity of $4000\, \mathrm{fb}^{−1}$ means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of $1.6 \cdot 10^{15}$ $1\, \mathrm{MeV}$ $\mathrm{n_{eq}/cm^2}$ and $0.66\, \mathrm{MGy}$, respectively, including a safety factor of $1.5$. Radiation hard n${}^+$-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n${}^+$ implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We will discuss the contributions by parameterizing the excitation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips

Analysis of the Quality Assurance results from the initial part of production of the ATLAS18 ITk strip sensors

The production of strip sensors for the ATLAS Inner Tracker (ITk) started in 2021. Since then, a Quality Assurance (QA) program has been carried out continuously, by using specific test structures, in parallel to the Quality Control (QC) inspection of the sensors. The QA program consists of monitoring sensor-specific characteristics and the technological process variability, before and after the irradiation with gammas, neutrons, and protons. After two years, half of the full production volume has been reached and we present an analysis of the parameters measured as part of the QA process. The main devices used for QA purposes are miniature strip sensors, monitor diodes, and the ATLAS test chip, which contains several test structures. Such devices are tested by several sites across the collaboration depending on the type of samples (non-irradiated components or irradiated with protons, neutrons, or gammas). The parameters extracted from the tests are then uploaded to a database and analyzed by Python scripts. These parameters are mainly examined through histograms and time-evolution plots to obtain parameter distributions, production trends, and meaningful parameter-to-parameter correlations. The purpose of this analysis is to identify possible deviations in the fabrication or the sensor quality, changes in the behavior of the test equipment at different test sites, or possible variability in the irradiation processes. The conclusions extracted from the QA program have allowed test optimization, establishment of control limits for the parameters, and a better understanding of device properties and fabrication trends. In addition, any abnormal results prompt immediate feedback to the vendor