378 research outputs found

    A hybrid LES/CAA method applied to a 3D shear flow simulation

    Get PDF
    An aero-acoustic coupling method based on the splitting into noise sources generation and acoustic propagation in separate physical domains is presented in this paper. The key idea is to limit, as much as possible, the CFD domain to the noise generation region and to accurately propagate the acoustic waves with a CAA solver. The approach presented hereis a domain decomposition method based on the coupling of different equations, methods and meshes, which allows a simulation of both flow and acoustics in one single coupled calculation suitable for far field predictions with reflecting bodies through a coupling boundary

    Defect in lung growth Comparative study of three diagnostic criteria.

    Get PDF
    Traduction anglaise de l'article Arch Pediatr. 2004 Jun;11(6):515-7 Référence pubmed : 15158815A systematic analysis was made of the autopsies of 74 newborns and fetuses (49 pathological cases and 25 controls) to detect defects in lung growth. In each case lung/body (L/B) weight ratio was calculated, and radial alveolar (RA) count and histological assessment were performed. The L/B ratio is of diagnostic value when lower than 0.012 but not when there is intercurrent disease. RA count is low in lung hypoplasia but is not an entirely reliable diagnostic criterion since it change throughout pregnancy and the earlier the gestational age the wider the range of variation. Histological assessment showed an abnormally high number of bronchi and bronchi in distal location with in some cases delayed differentiation of distal airways. If any one of the above three critera fails to determine lung hypoplasia the other two can be used to arrive at diagnosis

    Dynamics and thermodynamics of axisymmetric flows: I. Theory

    Get PDF
    We develop new variational principles to study stability and equilibrium of axisymmetric flows. We show that there is an infinite number of steady state solutions. We show that these steady states maximize a (non-universal) HH-function. We derive relaxation equations which can be used as numerical algorithm to construct stable stationary solutions of axisymmetric flows. In a second part, we develop a thermodynamical approach to the equilibrium states at some fixed coarse-grained scale. We show that the resulting distribution can be divided in a universal part coming from the conservation of robust invariants and one non-universal determined by the initial conditions through the fragile invariants (for freely evolving systems) or by a prior distribution encoding non-ideal effects such as viscosity, small-scale forcing and dissipation (for forced systems). Finally, we derive a parameterization of inviscid mixing to describe the dynamics of the system at the coarse-grained scale

    Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

    Full text link
    [EN] The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present well-defined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area.This work was financially supported by the Spanish Ministry of Economy and Competitiveness (Project Nos. TEC2012-38540-C02-01 and TEC2016-76849-C2-1-R). O.B. also acknowledges the subprogram "Ayudas para Contratos Predoctorales para la Formacion de Doctores" of the Spanish Ministry of Economy and Competitiveness for economical support. X.P., C.L., and C.G. are grateful to C. Frilay for his expertise in the maintenance of the sputtering kit used for the growth of the ZnO films.BlĂĄzquez, O.; Frieiro, J.; LĂłpez-Vidrier, J.; Guillaume, C.; Portier, X.; LabbĂ©, C.; Sanchis Kilders, P.... (2018). Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices. Applied Physics Letters. 113(18):1-6. https://doi.org/10.1063/1.50469111611318I. G. Baek , M. S. Lee , S. Sco , M. J. Lee , D. H. Seo , D.S. Suh , J. C. Park , S. O. Park , H. S. Kim , I. K. Yoo , U.I. Chung , and J. T. Moon , in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 ( IEEE, 2004), pp. 587–590.Waser, R., & Aono, M. (2007). Nanoionics-based resistive switching memories. Nature Materials, 6(11), 833-840. doi:10.1038/nmat2023Kaeriyama, S., Sakamoto, T., Sunamura, H., Mizuno, M., Kawaura, H., Hasegawa, T., 
 Aono, M. (2005). A nonvolatile programmable solid-electrolyte nanometer switch. IEEE Journal of Solid-State Circuits, 40(1), 168-176. doi:10.1109/jssc.2004.837244Strukov, D. B., & Likharev, K. K. (2005). CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices. Nanotechnology, 16(6), 888-900. doi:10.1088/0957-4484/16/6/045Mehonic, A., Cueff, S., Wojdak, M., Hudziak, S., Jambois, O., LabbĂ©, C., 
 Kenyon, A. J. (2012). Resistive switching in silicon suboxide films. Journal of Applied Physics, 111(7), 074507. doi:10.1063/1.3701581Mehonic, A., Vrajitoarea, A., Cueff, S., Hudziak, S., Howe, H., LabbĂ©, C., 
 Kenyon, A. J. (2013). Quantum Conductance in Silicon Oxide Resistive Memory Devices. Scientific Reports, 3(1). doi:10.1038/srep02708Pickett, M. D., Medeiros-Ribeiro, G., & Williams, R. S. (2012). A scalable neuristor built with Mott memristors. Nature Materials, 12(2), 114-117. doi:10.1038/nmat3510Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010). Nanoscale Memristor Device as Synapse in Neuromorphic Systems. Nano Letters, 10(4), 1297-1301. doi:10.1021/nl904092hVescio, G., Crespo-Yepes, A., Alonso, D., Claramunt, S., Porti, M., Rodriguez, R., 
 Aymerich, X. (2017). Inkjet Printed HfO2-Based ReRAMs: First Demonstration and Performance Characterization. IEEE Electron Device Letters, 38(4), 457-460. doi:10.1109/led.2017.2668599Valov, I. (2013). Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale. ChemElectroChem, 1(1), 26-36. doi:10.1002/celc.201300165MartĂ­n, G., GonzĂĄlez, M. B., Campabadal, F., PeirĂł, F., Cornet, A., & EstradĂ©, S. (2017). Transmission electron microscopy assessment of conductive-filament formation in Ni–HfO2–Si resistive-switching operational devices. Applied Physics Express, 11(1), 014101. doi:10.7567/apex.11.014101Simanjuntak, F. M., Panda, D., Wei, K.-H., & Tseng, T.-Y. (2016). Status and Prospects of ZnO-Based Resistive Switching Memory Devices. Nanoscale Research Letters, 11(1). doi:10.1186/s11671-016-1570-yKim, J., & Yong, K. (2011). Mechanism Study of ZnO Nanorod-Bundle Sensors for H2S Gas Sensing. The Journal of Physical Chemistry C, 115(15), 7218-7224. doi:10.1021/jp110129fYuan, Q., Zhao, Y.-P., Li, L., & Wang, T. (2009). Ab Initio Study of ZnO-Based Gas-Sensing Mechanisms: Surface Reconstruction and Charge Transfer. The Journal of Physical Chemistry C, 113(15), 6107-6113. doi:10.1021/jp810161jSeo, J. W., Park, J.-W., Lim, K. S., Yang, J.-H., & Kang, S. J. (2008). Transparent resistive random access memory and its characteristics for nonvolatile resistive switching. Applied Physics Letters, 93(22), 223505. doi:10.1063/1.3041643Rahaman, S. Z., Maikap, S., Chiu, H.-C., Lin, C.-H., Wu, T.-Y., Chen, Y.-S., 
 Tsai, M.-J. (2010). Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte. Electrochemical and Solid-State Letters, 13(5), H159. doi:10.1149/1.3339449Simanjuntak, F. M., Panda, D., Tsai, T.-L., Lin, C.-A., Wei, K.-H., & Tseng, T.-Y. (2015). Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode. Journal of Materials Science, 50(21), 6961-6969. doi:10.1007/s10853-015-9247-ySimanjuntak, F. M., Prasad, O. K., Panda, D., Lin, C.-A., Tsai, T.-L., Wei, K.-H., & Tseng, T.-Y. (2016). Impacts of Co doping on ZnO transparent switching memory device characteristics. Applied Physics Letters, 108(18), 183506. doi:10.1063/1.4948598Simanjuntak, F. M., Panda, D., Tsai, T.-L., Lin, C.-A., Wei, K.-H., & Tseng, T.-Y. (2015). Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming. Applied Physics Letters, 107(3), 033505. doi:10.1063/1.4927284Liu, Q., Guan, W., Long, S., Jia, R., Liu, M., & Chen, J. (2008). Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted. Applied Physics Letters, 92(1), 012117. doi:10.1063/1.2832660Shuai, Y., Zhou, S., BĂŒrger, D., Helm, M., & Schmidt, H. (2011). Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt. Journal of Applied Physics, 109(12), 124117. doi:10.1063/1.3601113Chen, J.-Y., Hsin, C.-L., Huang, C.-W., Chiu, C.-H., Huang, Y.-T., Lin, S.-J., 
 Chen, L.-J. (2013). Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories. Nano Letters, 13(8), 3671-3677. doi:10.1021/nl4015638Hubbard, W. A., Kerelsky, A., Jasmin, G., White, E. R., Lodico, J., Mecklenburg, M., & Regan, B. C. (2015). Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching. Nano Letters, 15(6), 3983-3987. doi:10.1021/acs.nanolett.5b00901Liu, Q., Sun, J., Lv, H., Long, S., Yin, K., Wan, N., 
 Liu, M. (2012). Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM. Advanced Materials, 24(14), 1844-1849. doi:10.1002/adma.201104104Zhu, X., Wu, H.-Z., Qiu, D.-J., Yuan, Z., Jin, G., Kong, J., & Shen, W. (2010). Photoluminescence and resonant Raman scattering in N-doped ZnO thin films. Optics Communications, 283(13), 2695-2699. doi:10.1016/j.optcom.2010.03.006Cerqueira, M. F., Vasilevskiy, M. I., Oliveira, F., Rolo, A. G., Viseu, T., Ayres de Campos, J., 
 Correia, R. (2011). Resonant Raman scattering in ZnO:Mn and ZnO:Mn:Al thin films grown by RF sputtering. Journal of Physics: Condensed Matter, 23(33), 334205. doi:10.1088/0953-8984/23/33/334205Marchewka, A., Roesgen, B., Skaja, K., Du, H., Jia, C.-L., Mayer, J., 
 Menzel, S. (2015). Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process. Advanced Electronic Materials, 2(1), 1500233. doi:10.1002/aelm.201500233Krzywiecki, M., Grządziel, L., Sarfraz, A., Iqbal, D., Szwajca, A., & Erbe, A. (2015). Zinc oxide as a defect-dominated material in thin films for photovoltaic applications – experimental determination of defect levels, quantification of composition, and construction of band diagram. Physical Chemistry Chemical Physics, 17(15), 10004-10013. doi:10.1039/c5cp00112aMurgatroyd, P. N. (1970). Theory of space-charge-limited current enhanced by Frenkel effect. Journal of Physics D: Applied Physics, 3(2), 151-156. doi:10.1088/0022-3727/3/2/308Electron emission in intense electric fields. (1928). Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 119(781), 173-181. doi:10.1098/rspa.1928.0091ÖzgĂŒr, Ü., Alivov, Y. I., Liu, C., Teke, A., Reshchikov, M. A., Doğan, S., 
 Morkoç, H. (2005). A comprehensive review of ZnO materials and devices. Journal of Applied Physics, 98(4), 041301. doi:10.1063/1.1992666Kaidashev, E. M., Lorenz, M., von Wenckstern, H., Rahm, A., Semmelhack, H.-C., Han, K.-H., 
 Grundmann, M. (2003). High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition. Applied Physics Letters, 82(22), 3901-3903. doi:10.1063/1.1578694Gall, D. (2016). Electron mean free path in elemental metals. Journal of Applied Physics, 119(8), 085101. doi:10.1063/1.4942216Lee, W., Park, J., Kim, S., Woo, J., Shin, J., Choi, G., 
 Hwang, H. (2012). High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays. ACS Nano, 6(9), 8166-8172. doi:10.1021/nn3028776Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., 
 Hwang, C. S. (2010). Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nature Nanotechnology, 5(2), 148-153. doi:10.1038/nnano.2009.456Choi, B. J., Torrezan, A. C., Strachan, J. P., Kotula, P. G., Lohn, A. J., Marinella, M. J., 
 Yang, J. J. (2016). High‐Speed and Low‐Energy Nitride Memristors. Advanced Functional Materials, 26(29), 5290-5296. doi:10.1002/adfm.201600680Sun, X. (2006). Designing efficient field emission into ZnO. SPIE Newsroom. doi:10.1117/2.1200602.0101Hu, C., Wang, Q., Bai, S., Xu, M., He, D., Lyu, D., & Qi, J. (2017). The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory. Applied Physics Letters, 110(7), 073501. doi:10.1063/1.4976512Gul, F., & Efeoglu, H. (2017). Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor. Superlattices and Microstructures, 101, 172-179. doi:10.1016/j.spmi.2016.11.043BlĂĄzquez, O., MartĂ­n, G., Camps, I., Mariscal, A., LĂłpez-Vidrier, J., RamĂ­rez, J. M., 
 Garrido, B. (2018). Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process. Nanotechnology, 29(23), 235702. doi:10.1088/1361-6528/aab744Bersuker, G., Gilmer, D. C., Veksler, D., Kirsch, P., Vandelli, L., Padovani, A., 
 NafrĂ­a, M. (2011). Metal oxide resistive memory switching mechanism based on conductive filament properties. Journal of Applied Physics, 110(12), 124518. doi:10.1063/1.367156

    The stellar mass function of the most massive galaxies at 3<=z<5 in the UKIDSS Ultra Deep Survey

    Get PDF
    We have analysed a sample of 1292 4.5 micron-selected galaxies at z>=3, over 0.6 square degrees of the UKIRT Infrared Deep Survey (UKIDSS) Ultra Deep Survey (UDS). Using photometry from the U band through 4.5 microns, we have obtained photometric redshifts and derived stellar masses for our sources. Only two of our galaxies potentially lie at z>5. We have studied the galaxy stellar mass function at 3<=z<5, based on the 1213 galaxies in our catalogue with [4.5]<= 24.0. We find that: i) the number density of M > 10^11 Msun galaxies increased by a factor > 10 between z=5 and 3, indicating that the assembly rate of these galaxies proceeded > 20 times faster at these redshifts than at 0<z<2; ii) the Schechter function slope alpha is significantly steeper than that displayed by the local stellar mass function, which is both a consequence of the steeper faint end and the absence of a pure exponential decline at the high-mass end; iii) the evolution of the comoving stellar mass density from z=0 to 5 can be modelled as log10 (rho_M) =-(0.05 +/- 0.09) z^2 - (0.22 -/+ 0.32) z + 8.69. At 3 10^11 Msun galaxies would be missed by optical surveys with R<27 or z<26. Thus, our study demonstrates the importance of deep mid-IR surveys over large areas to perform a complete census of massive galaxies at high z and trace the early stages of massive galaxy assembly.Comment: 16 pages, 15 figures, 2 tables. Accepted for publication in MNRA

    Light-activated electroforming in ITO/ZnO/p-Si resistive switching devices

    Full text link
    We report on light-activated electroforming of ZnO/p-Si heterojunction memristors with transparent indium tin oxide as the top electrode. Light-generated electron-hole pairs in the p-type substrate are separated by the external electric field and electrons are injected into the active ZnO layer. The additional application of voltage pulses allows achieving different resistance states that end up in the realization of the low resistance state (LRS). This process requires much less voltage compared to dark conditions, thus avoiding undesired current overshoots and achieving a self-compliant device. The transport mechanisms governing each resistance state are studied and discussed. An evolution from an electrode-limited to a space charge-limited transport is observed along the electroforming process before reaching the LRS, which is ascribed to the progressive formation of conductive paths that consequently induce the growth of conductive nanofilaments through the ZnO layer. This work was financially supported by the Spanish Ministry of Economy and Competitiveness (Project Nos. TEC2012-38540-C02-01 and TEC2016-76849-C2-1-R). O.B. also acknowledges the subprogram "Ayudas para Contratos Predoctorales para la FormaciĂłn de-Doctores" from the Spanish Ministry of Economy and Competitiveness for economical support. J.L.F. acknowledges the subprogram "Ayudas para la FormaciĂłn de Profesorado Universitario" (No. FPU16/06257) from the Spanish Ministry of Education, Culture and Sports for economical support. X.P., C.L., and C.G. are grateful to C. Frilay for his expertise in the maintenance of the sputtering setup used for the growth of the ZnO films

    Toward RGB LEDs based on rare earth-doped ZnO

    Get PDF
    By using ZnO thin films doped with Ce, Tb or Eu, deposited via radiofrequency magnetron sputtering, we have developed monochromatic (blue, green and red, respectively) light emitting devices (LEDs). The rare earth ions introduced with doping rates lower than 2% exhibit narrow and intense emission peaks due to electronic transitions in relaxation processes induced after electrical excitation. This study proves zinc oxide to be a good host for these elements, its high conductivity and optical transparency in the visible range being as well exploited as top transparent electrode. After structural characterization of the different doped layers, a device structure with intense electroluminescence is presented, modeled, and electrically and optically characterized. The different emission spectra obtained are compared in a chromatic diagram, providing a reference for future works with similar devices. The results hereby presented demonstrate three operating monochromatic LEDs, as well as a combination of the three species into another one, with a simply-designed structure compatible with current Si technology and demonstrating an integrated red-green-blue emission

    Spectroscopy of luminous z>7 galaxy candidates and sources of contamination in z>7 galaxy searches

    Get PDF
    We present three bright z+ dropout candidates selected from deep Near-Infrared (NIR) imaging of the COSMOS 2 square degree field. All three objects match the 0.8-8um colors of other published z>7 candidates but are three magnitudes brighter, facilitating further study. Deep spectroscopy of two of the candidates covering 0.64-1.02um with Keck-DEIMOS and all three covering 0.94-1.10um and 1.52-1.80um with Keck-NIRSPEC detects weak spectral features tentatively identified as Ly-alpha at z=6.95 and z=7.69 in two of the objects. The third object is placed at z~1.6 based on a 24um and weak optical detection. A comparison with the spectral energy distributions of known z<7 galaxies, including objects with strong spectral lines, large extinction, and large systematic uncertainties in the photometry yields no objects with similar colors. However, the lambda>1um properties of all three objects can be matched to optically detected sources with photometric redshifts at z~1.8, so the non-detection in the i+ and z+ bands are the primary factors which favors a z>7 solution. If any of these objects are at z~7 the bright end of the luminosity function is significantly higher at z>7 than suggested by previous studies, but consistent within the statistical uncertainty and the dark matter halo distribution. If these objects are at low redshift, the Lyman-Break selection must be contaminated by a previously unknown population of low redshift objects with very strong breaks in their broad band spectral energy distributions and blue NIR colors. The implications of this result on luminosity function evolution at high redshift is discussed. We show that the primary limitation of z>7 galaxy searches with broad filters is the depth of the available optical data.Comment: 15 Pages, 15 figures, accepted to Ap

    A highly magnified candidate for a young galaxy seen when the Universe was 500 Myrs old

    Get PDF
    The early Universe at redshift z\sim6-11 marks the reionization of the intergalactic medium, following the formation of the first generation of stars. However, those young galaxies at a cosmic age of \lesssim 500 million years (Myr, at z \gtrsim 10) remain largely unexplored as they are at or beyond the sensitivity limits of current large telescopes. Gravitational lensing by galaxy clusters enables the detection of high-redshift galaxies that are fainter than what otherwise could be found in the deepest images of the sky. We report the discovery of an object found in the multi-band observations of the cluster MACS1149+22 that has a high probability of being a gravitationally magnified object from the early universe. The object is firmly detected (12 sigma) in the two reddest bands of HST/WFC3, and not detected below 1.2 {\mu}m, matching the characteristics of z\sim9 objects. We derive a robust photometric redshift of z = 9.6 \pm 0.2, corresponding to a cosmic age of 490 \pm 15Myr (i.e., 3.6% of the age of the Universe). The large number of bands used to derive the redshift estimate make it one of the most accurate estimates ever obtained for such a distant object. The significant magnification by cluster lensing (a factor of \sim15) allows us to analyze the object's ultra-violet and optical luminosity in its rest-frame, thus enabling us to constrain on its stellar mass, star-formation rate and age. If the galaxy is indeed at such a large redshift, then its age is less than 200 Myr (at the 95% confidence level), implying a formation redshift of zf \lesssim 14. The object is the first z>9 candidate that is bright enough for detailed spectroscopic studies with JWST, demonstrating the unique potential of galaxy cluster fields for finding highly magnified, intrinsically faint galaxies at the highest redshifts.Comment: Submitted to the Nature Journal. 39 Pages, 13 figure
    • 

    corecore