The influence of the long-lived quantum Hall potential on the characteristics of quantum devices

Novel hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same 2-dimensional electron gas (2DEG) material. These observations show that the induced quantum Hall potential at the edges of the 2DEG reservoirs influences transport through the devices, and have important consequences for the magneto-transport of all lateral quantum devices.Comment: 5 pages, 4 figure

Spin-blockade spectroscopy of a two-level artificial molecule

Coulomb and spin blockade spectroscopy investigations have been performed on an electrostatically defined ``artificial molecule'' connected to spin polarized leads. The molecule is first effectively reduced to a two-level system by placing both constituent atoms at a specific location of the level spectrum. The spin sensitivity of the conductance enables us to identify the electronic spin-states of the two-level molecule. We find in addition that the magnetic field induces variations in the tunnel coupling between the two atoms. The lateral nature of the device is evoked to explain this behavior.Comment: 4 pages, 4 figures; revised version with a minor change in Fig.2 and additional inset in Fig.3.;accepted by PR

Coulomb and Spin blockade of two few-electrons quantum dots in series in the co-tunneling regime

We present Coulomb Blockade measurements of two few-electron quantum dots in series which are configured such that the electrochemical potential of one of the two dots is aligned with spin-selective leads. The charge transfer through the system requires co-tunneling through the second dot which is $not$ in resonance with the leads. The observed amplitude modulation of the resulting current is found to reflect spin blockade events occurring through either of the two dots. We also confirm that charge redistribution events occurring in the off-resonance dot are detected indirectly via changes in the electrochemical potential of the aligned dot.Comment: 6 pages, 5 figures, submitted to Phys. Rev.

Charge Sensing of an Artificial H2+ Molecule

We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize the equilibrium state of a single electron trapped in the doubled-dot (artificial H2+ molecule) by measuring the average occupation of one dot. We present a model where the electrostatic coupling between the molecule and the sensor is taken into account explicitly. From the measurements, we extract the temperature of the isolated electron and the tunnel coupling energy. It is found that this coupling can be tuned between 0 and 60 micro electron-volt in our device.Comment: 5 pages, 4 figures. Revised version with added material. To be published in Physical Review

Jack vertex operators and realization of Jack functions

We give an iterative method to realize general Jack functions from Jack functions of rectangular shapes. We first show some cases of Stanley's conjecture on positivity of the Littlewood-Richardson coefficients, and then use this method to give a new realization of Jack functions. We also show in general that vectors of products of Jack vertex operators form a basis of symmetric functions. In particular this gives a new proof of linear independence for the rectangular and marked rectangular Jack vertex operators. Thirdly a generalized Frobenius formula for Jack functions was given and was used to give new evaluation of Dyson integrals and even powers of Vandermonde determinant.Comment: Expanded versio

The origin of switching noise in GaAs/AlGaAs lateral gated devices

We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this noise, while an asymmetric bias exacerbates it. We propose a model in which the noise originates from a leakage current of electrons that tunnel through the Schottky barrier under the gate into the doped layer. The key to reducing noise is to keep this barrier opaque under experimental conditions. Bias cooling reduces the density of ionized donors, which builds in an effective negative gate voltage. A smaller negative bias is therefore needed to reach the desired operating point. This suppresses tunnelling from the gate and hence the noise. The reduction in the density of ionized donors also strengthens the barrier to tunneling at a given applied voltage. Support for the model comes from our direct observation of the leakage current into a closed quantum dot, around $10^{-20} \mathrm{A}$ for this device. The current was detected by a neighboring quantum point contact, which showed monotonic steps in time associated with the tunneling of single electrons into the dot. If asymmetric gate voltages are applied, our model suggests that the noise will increase as a consequence of the more negative gate voltage applied to one of the gates to maintain the same device conductance. We observe exactly this behaviour in our experiments.Comment: 8 pages, 7 figure

Rodrigues Formula for the Nonsymmetric Multivariable Laguerre Polynomial

Extending a method developed by Takamura and Takano, we present the Rodrigues formula for the nonsymmetric multivariable Laguerre polynomials which form the orthogonal basis for the $B_{N}$-type Calogero model with distinguishable particles. Our construction makes it possible for the first time to algebraically generate all the nonsymmetric multivariable Laguerre polynomials with different parities for each variable.Comment: 6 pages, LaTe

Rodrigues Formula for Hi-Jack Symmetric Polynomials Associated with the Quantum Calogero Model

The Hi-Jack symmetric polynomials, which are associated with the simultaneous eigenstates for the first and second conserved operators of the quantum Calogero model, are studied. Using the algebraic properties of the Dunkl operators for the model, we derive the Rodrigues formula for the Hi-Jack symmetric polynomials. Some properties of the Hi-Jack polynomials and the relationships with the Jack symmetric polynomials and with the basis given by the QISM approach are presented. The Hi-Jack symmetric polynomials are strong candidates for the orthogonal basis of the quantum Calogero model.Comment: 17 pages, LaTeX file using jpsj.sty (ver. 0.8), cite.sty, subeqna.sty, subeqn.sty, jpsjbs1.sty and jpsjbs2.sty (all included.) You can get all the macros from ftp.u-tokyo.ac.jp/pub/SOCIETY/JPSJ