The Role of BAR Proteins and the Glycocalyx in Brain Endothelium Transcytosis

Within the brain, endothelial cells lining the blood vessels meticulously coordinate the transport of nutrients, energy metabolites and other macromolecules essential in maintaining an appropriate activity of the brain. While small molecules are pumped across specialised molecular transporters, large macromolecular cargos are shuttled from one side to the other through membrane-bound carriers formed by endocytosis on one side, trafficked to the other side and released by exocytosis. Such a process is collectively known as transcytosis. The brain endothelium is recognised to possess an intricate vesicular endosomal network that mediates the transcellular transport of cargos from blood-to-brain and brain-to-blood. However, mounting evidence suggests that brain endothelial cells (BECs) employ a more direct route via tubular carriers for a fast and efficient transport from the blood to the brain. Here, we compile the mechanism of transcytosis in BECs, in which we highlight intracellular trafficking mediated by tubulation, and emphasise the possible role in transcytosis of the Bin/Amphiphysin/Rvs (BAR) proteins and glycocalyx (GC)-a layer of sugars covering BECs, in transcytosis. Both BAR proteins and the GC are intrinsically associated with cell membranes and involved in the modulation and shaping of these membranes. Hence, we aim to summarise the machinery involved in transcytosis in BECs and highlight an uncovered role of BAR proteins and the GC at the brain endothelium

Zelo no uso de instrumentos de trabalho "cuide bem dos equipamentos".

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Uso do modelo de crescimento 3-PG para o zoneamento do potencial produtivo do eucalipto no Estado de Minas Gerais.

O zoneamento do potencial produtivo do eucalipto para o estado de Minas Gerais, a partir das estimativas realizadas pelo modelo de crescimento 3-PG, permite a formulação d~ políticas para um melhor aproveitamento do espaço rural, direcionamento de programas de fomento florestal, seleção de áreas prioritárias para reflorestamentos e definição de níveis de produtividades locais. A parametrização do modelo levou em consideração o uso de sistemas de produção de médio e alto nível tecnológico. A partir das estimativas realizadas pelo modelo 3-PG identificou-se que o uso de alto .nível tecnológico, compreendendo o plantio de materiais selecionados e técnicas adequadas de nutrição e manejo dos povoamentos permite ganhos em produtividade cerca de duas vezes maior de. que os valores obtidos em plantios convencionais. O modelo 3-PG mostrou-se uma ferramenta adequada, para a estimativa do potencial produtivo do eucalipto, em escala regional, considerando-se as variações climáticas,' edáficas e fisiológicas. A maioria dos municípios mineiros apresenta potencial produtivo superior aos limites mínimos estabelecidos como critério de recomendação de cultivo

Desempenho produtivo de genótipos de cebola em vertissolo no Vale do São Francisco.

Com o objetivo de selecionar genótipos de cebola com mais alta produtividade para o Vale do São Francisco, conduziu-se um experimento no período de abril a agosto de 2003, no Campo Experimental de Mandacaru, Juazeiro-BA. O delineamento experimental utilizado foi em blocos cmpleto ao acaso, com doze genótipos (Sawana Sweet, TPR 91970; Legend; IPA 11; Encino; EX-07593000; EX-07595001; EX-07592000; EX-19013; EX-07595002; Superex e Brisa) e quatro repetições. A produtividade total de bulbos variou de 19,10 a 45,11 t. ha-1, sendo o genótipo Legend o menos produtivo (19,10 t. ha-1), não se observando diferenças estatísticas entre os demais tratamentos. A produtividade comercial oscilou entre 15,62 a 43,05 t. ha-1, sobressaindo-se os genótipos IPA 11, Superex, Sawana Sweet, EX-07595002, Brisa, TPR 91970, Ex-19013 e Ex-07592000. O número de bulbos comerciais por parcela oscilou entre 84,00 a 101,00 bulbos. A massa fresca do bulbo variou de 119,33 a 221,00 g. bulbo-1 , com maiores massas para os genótipos EX-07593001, IPA 11, EX-07595002 e Supere

Electrodeposition of In2S3 buffer layer for Cu(In,Ga)Se2 solar cells

AbstractThe electrochemical deposition of In2S3 thin films was carried out from an aqueous solution of InCl3 and Na2S2O3. The effect of the potential of deposition was studied on the cell parameters of CIGSe based solar cells. The obtained films depending on the deposition potential and thickness exhibited complete substrate coverage or nanocolumnar layers. XPS measurements detected the presence of indium sulphide and hydroxide depending on the deposition parameters. Maximum photoelectric conversion efficiency of 10.2% was obtained, limited mainly by a low fill factor (56%). Further process optimization is expected to lead to efficiencies comparable to CdS buffer layers

A new picture of the Lifshitz critical behavior

New field theoretic renormalization group methods are developed to describe in a unified fashion the critical exponents of an m-fold Lifshitz point at the two-loop order in the anisotropic (m not equal to d) and isotropic (m=d close to 8) situations. The general theory is illustrated for the N-vector phi^4 model describing a d-dimensional system. A new regularization and renormalization procedure is presented for both types of Lifshitz behavior. The anisotropic cases are formulated with two independent renormalization group transformations. The description of the isotropic behavior requires only one type of renormalization group transformation. We point out the conceptual advantages implicit in this picture and show how this framework is related to other previous renormalization group treatments for the Lifshitz problem. The Feynman diagrams of arbitrary loop-order can be performed analytically provided these integrals are considered to be homogeneous functions of the external momenta scales. The anisotropic universality class (N,d,m) reduces easily to the Ising-like (N,d) when m=0. We show that the isotropic universality class (N,m) when m is close to 8 cannot be obtained from the anisotropic one in the limit d --> m near 8. The exponents for the uniaxial case d=3, N=m=1 are in good agreement with recent Monte Carlo simulations for the ANNNI model.Comment: 48 pages, no figures, two typos fixe

Preparation of a fluorescent peptide substrate to target tumor-associated macrophages

One of the significant challenges in targeting M2 macrophages is the need for specific and high-affinity targeting ligands that can distinguish them from phenotype M1 macrophages. In order to investigate the selectivity of the polypeptide M2pep (YEQDPWGVKWWY) towards M2 macrophages using fluorescence-based techniques, we report here the synthesis and characteriza-tion of the M2pep substrate labeled with a fluorophore. This peptide comprising a 12-amino acid sequence with a spacer consisting of three additional glycines (GGG) was synthesized and cou-pled to Rhodamine B at its N-terminal via microwave-assisted solid-phase synthesis. The structure of the labeled peptide was confirmed by NMR, UV-Vis, fluorescence spectroscopy and mass spec-trometry.This research was funded by the Foundation for Science and Technology (FCT) who provided financial support to CQ/UM (UID/QUI/00686/2020), project (PTDC/QUI-OUT/3143/2021) and a PhD grant to C. D. F. Martins (SFRH/BD/05277/2020). The NMR spectrometer Bruker Avance III 400 is part of the National NMR Network and was purchased within the framework of the National Program for Scientific Re-equipment, contract REDE/1517/RMN/2005, with funds from POCI 2010 (FEDER) and FCT

Ultrahigh Bandwidth Spin Noise Spectroscopy: Detection of Large g-Factor Fluctuations in Highly n-Doped GaAs

We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing an ingenious scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pumping and enables nearly perturbation free measurements of extremely short spin dephasing times. We employ the technique to highly n-doped bulk GaAs where magnetic field dependent measurements show unexpected large g-factor fluctuations. Calculations suggest that such large g-factor fluctuations do not necessarily result from extrinsic sample variations but are intrinsically present in every doped semiconductor due to the stochastic nature of the dopant distribution.Comment: 5 pages, 3 figure