Electronic States and Light Absorption in a Cylindrical Quantum Dot Having Thin Falciform Cross Section

Energy level structure and direct light absorption in a cylindrical quantum dot (CQD), having thin falciform cross section, are studied within the framework of the adiabatic approximation. An analytical expression for the energy spectrum of the particle is obtained. For the one-dimensional “fast” subsystem, an oscillatory dependence of the wave function amplitude on the cross section parameters is revealed. For treatment of the “slow” subsystem, parabolic and modified Pöschl-Teller effective potentials are used. It is shown that the low-energy levels of the spectrum are equidistant. In the strong quantization regime, the absorption coefficient and edge frequencies are calculated. Selection rules for the corresponding quantum transitions are obtained

Multi-physics self-consistent modeling in nanotechnological applications: quantum dots and quantum-well lasers

This paper reports a self-consistent Poisson-Schr¨odinger scheme including the effects of the piezoelectricity, the spontaneous polarization and the charge density on the electronic states and the quasi-Fermi level energy in wurtzite type semiconductor heterojunction and quantum-laser

Tight-binding model for opto-electronic properties of penta-graphene nanostructures

We present a tight-binding parametrization for penta-graphene that correctly describes its electronic band structure and linear optical response. The set of parameters is validated by comparing to ab-initio density functional theory calculations for single-layer penta-graphene, showing a very good global agreement. We apply this parameterization to penta-graphene nanoribbons, achieving an adequate description of quantum-size effects. Additionally, a symmetry-based analysis of the energy band structure and the optical transitions involved in the absorption spectra is introduced, allowing for the interpretation of the optoelectronic features of these systems. © 2018, The Author(s)

Spin Orbit Coupling Gap and Indirect Gap in Strain-Tuned Topological Insulator-Antimonene

Recently, searching large-bulk band gap topological insulator (TI) is under intensive study. Through k·P theory and first-principles calculations analysis on antimonene, we find that α-phase antimonene can be tuned to a 2D TI under an in-plane anisotropic strain and the magnitude of direct bulk band gap (SOC gap) depends on the strength of spin-orbit coupling (SOC) which is strain-dependent. As the band inversion of this TI accompanies with an indirect band gap, the TI bulk band gap is the indirect band gap, not the SOC gap. SOC gap can be enhanced by increasing strain, whereas the indirect band gap can be closed by increasing strain, such that large bulk band gap are forbidden. With the k·P theory analysis on antimonene, we know how to avoid such an indirect band gap. In case of indirect band gap avoided, the SOC gap could become the bulk band gap of a TI which can be enhanced by strain. Thus our theoretical analysis can help searching large bulk band gap TI