21 research outputs found
Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex
10.1088/0268-1242/17/2/309Semiconductor Science and Technology172141-144SSTE
Gate dielectrics on strained-Si/SiGe heterolayers
10.1016/j.sse.2004.02.014Solid-State Electronics4881369-1389SSEL
Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers
10.1088/0268-1242/16/8/312Semiconductor Science and Technology168704-707SSTE
High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films
10.1109/55.936352IEEE Electron Device Letters228387-389EDLE
Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers
Applied Physics Letters77121840-1842APPL
Reliability of ultrathin (
10.1088/0268-1242/18/1/305Semiconductor Science and Technology18133-38SSTE
Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substrates
10.1063/1.1540224Journal of Applied Physics9352464-2471JAPI
Tungsten nanocrystals embedded in high- k materials for memory application
10.1063/1.2045555Applied Physics Letters8711-APPL
Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory application
10.1116/1.2083930Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures2362278-2283JVTB
Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals
Technical Digest - International Electron Devices Meeting, IEDM2005170-173TDIM