2 research outputs found
UHV-STM study of single-walled carbon nanotubes applied to the GaAs(110) and InAs(110) surfaces
In this study, ultrahigh vacuum (UHV) cross-sectional
scanning tunneling microscopy (STM) and spectroscopy (STS) were used to
probe the physical and electrical properties of individual single-walled
carbon nanotubes (SWNTs) deposited onto semiconducting GaAs and InAs
platforms. Isolated nanotubes were applied to the III-V(110) surface in situ via an
UHV-compatible dry contact transfer (DCT) process. Subsequent STM
observations indicate a substrate-dependent SWNT orientation, with
individual nanotubes exhibiting a tendency to align in the direction, parallel to surface sublattice rows, while STS measurements
confirm the Type I and Type II energy band alignments of the GaAs/SWNT and
InAs/SWNT systems, respectively. Additionally, the electronic character of a
naturally occurring intramolecular semiconducting/metallic SWNT junction is
profiled