Radiation Hardness of Mos Structures Exposed to High-Energy Ions

MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm2 and 1010 cm2 were investigated by capacitance measuring methods (C-V, C-t), completed by quasistatic low-frequency C-V and DLTS measurements.The irradiated MOS structures were functional in spite of a high density of radiation defects. The electric activity of the defects brought a sharp decrease in the generation parameters tr and g. The parameters of six deep levels were detected in the MOS structures exposed to 710 MeV Bi ions irradiation. Five of these levels with energies 0.52 eV, 0.14 eV, 0.17 eV, 0.25 eV, 0.27 eV were radiation defects

Deep energy levels in RuO2/4H–SiC Schottky barrier structures

RuO2/4H–SiC Schottky diode structures based on n-type 4H–SiC (7×1017 cm–3) with stoichiometric RuO2 Schottky contacts were characterized by electrical capacitance-voltage and current voltage methods and deep-level transient spectroscopy in order to determine their unique semiconducting and electronic properties. The RuO2 films exhibited electrical conductivity of 60 µ cm for Schottky barrier heights of approximately 0.88 eV. These Schottky structures revealed two deep energy levels with thermal activation energies of 0.56 and 0.85 eV with reference to the conduction band.published_or_final_versio

Going too Far or Not Far Enough? The Framework for Psychology Curricula for Non-psychologists revisited – Reply to Comments

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Solid State Reaction and Operational Stability of Ruthenium Schottky Contact-on-6H-SiC Under Argon Annealing

Thin films of ruthenium-on-6-hexagonal silicon carbide (6H-SiC) were analysed by Rutherford backscattering spectroscopy (RBS) at various annealing temperatures. Some thin film samples were also analysed by scanning electron microscope (SEM). RBS analysis indicated minimal element diffusion, and formation of ruthenium oxide after annealing at 500 oC. Large scale diffusion of ruthenium (Ru) was observed to commence at 700 oC. The SEM images indicated that the as-deposited Ru was disorderly and amorphous. Annealing of the thin film improved the grain quality of Ru. The fabricated Ru-6H-SiC Schottky barrier diodes (SBD) with nickel ohmic contacts showed excellent rectifying behaviour and linear capacitance-voltage characteristics up to an annealing temperature of 900 oC. The SBDs degraded after annealing at 1000 oC. The degradation of the SBDs is attributed to the inter-diffusion of Ru and Si at the Schottky-substrate interface.http://link.springer.com/journal/116642016-10-31hb201

Pyramiding strategy for durable resistance to wheat leaf rust pathogen

Leaf rust caused by Puccinia recondita Rob. ex Desm. F. sp. tritici Eriks. & Henn is one of the most important diseases in wheat worldwide. The cultivation of resistant wheat is the most economical and environmental by sound method to reduce the yield losses. More than 40 genes for resistance against wheat leaf rust (Lr genes) have been described. The method to achieve a more durable resistance is to use different Lr genes in combination. In our breeding program we applied pyramiding strategy using several strong resistance genes to get durable resistance to wheat leaf rust pathogen. After several years of testing International Wheat Rust Nurseries, eight genetically different sources of resistance were selected and crossed with recurrent parents Princ and Starke. Hybrid combinations of the first backcross have been tested with three international pathogen cultures and inheritance of resistance has shown in the hybrids the presence of one, two, or three resistant genes. Eight of the best hybrid lines have been selected and crossed again with only effective isogenic lines containing the resistant genes Lr9, Lr19 and Lr24. Twenty crossing combinations have been tested with three pathotypes of Puccinia recondita tritici. Segregation ratios demonstrated accumulation of the used resistant genes

Solid state reaction of ruthenium with 6H-SiC under vacuum annealing and the impact on the electrical performance of its Schottky contact for high temperature operating SiC-based diodes

Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonal-silicon carbide (6H-SiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500-1,000 °C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru2Si3) at 800 °C, while diffusion of Ru into 6H-SiC commenced at 800 °C. Raman analysis of the thin films annealed at 1,000 °C showed clear D and G carbon peaks which was evidence of formation of graphite. At this annealing temperature, the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current-voltage characteristic, thereby, rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface