34 research outputs found
Introducing a 1200V vertical merged IGBT and Power MOSFET : The HUBFET
No full textThis paper introduces a merged vertical IGBT and Power MOSFET dubbed the HUBFET (Hybrid Unipolar Bipolar Field Effect Transistor). The HUBFET exhibits characteristics of each of the merged devices under differing conditions hence it is both Unipolar and Bipolar in operation. The prototype device is rated to 1200V and is operated in the same way as a conventional IGBT or Power MOSFET. It conducts up to 1 A.cm -2 in unipolar mode in the on-state (for VDS 1 V). The device also features a reverse conducting PiN diode, the same as that seen in a Power MOSFET. Presented here are simulated and measured on-state characteristics and measured inductive turn-off performance. © 2012 IEEE
An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well
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Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates
No full textElectrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes
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Silicon carbide light-emitting diode as a prospective room temperature source for single photons
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