28 research outputs found
A stable mid-IR, GaSb-based diode laser source for the cryogenic target layering at the Omega Laser Facility
Highly efficient holmium fibre laser diode pumped at 1.94 Ī¼m
A highly efficient HoĀ³āŗ-doped fluoride glass fibre laser operating at 2.08m is demonstrated using diode pumping at a 1.94m wavelength. A maximum slope efficiency of 78% and output power of 516mW has been obtained.2 page(s
Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers
Photonic Crystal Surface Emitting Diode Lasers with Ī» near 2 Āµm
Epitaxially regrown electrically pumped photonic crystal surface emitting lasers (PCSELs) operating near 2 Āµm were designed and fabricated within a III-V-Sb material system. A high-index-contrast photonic crystal layer was incorporated into the laser heterostructures by air-pocket-retaining epitaxial regrowth. Transmission electron microscopy studies confirmed uniform and continuous AlGaAsSb initial growth over the nano-patterned GaSb surface, followed by the development of the air-pockets. The PCSEL threshold current density had a minimal value of ~170 A/cm2 in the 160ā180 K temperature range when the QW gain spectrum aligned with the Ī2 band edge of the photonic crystal. The devices operated in a continuous wave regime at 160 K. The divergence and polarization of the multimode laser beam emitted from the 200 Āµm Ć 200 Āµm PCSEL aperture were controlled by filamentation
Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures
Photonic Crystal Surface Emitting Diode Lasers with λ near 2 µm
Epitaxially regrown electrically pumped photonic crystal surface emitting lasers (PCSELs) operating near 2 µm were designed and fabricated within a III-V-Sb material system. A high-index-contrast photonic crystal layer was incorporated into the laser heterostructures by air-pocket-retaining epitaxial regrowth. Transmission electron microscopy studies confirmed uniform and continuous AlGaAsSb initial growth over the nano-patterned GaSb surface, followed by the development of the air-pockets. The PCSEL threshold current density had a minimal value of ~170 A/cm2 in the 160–180 K temperature range when the QW gain spectrum aligned with the Γ2 band edge of the photonic crystal. The devices operated in a continuous wave regime at 160 K. The divergence and polarization of the multimode laser beam emitted from the 200 µm × 200 µm PCSEL aperture were controlled by filamentation