461 research outputs found
Covalent bonding and hybridization effects in the corundum-type transition-metal oxides V2O3 and Ti2O3
The electronic structure of the corundum-type transition-metal oxides V2O3
and Ti2O3 is studied by means of the augmented spherical wave method, based on
density-functional theory and the local density approximation. Comparing the
results for the vanadate and the titanate allows us to understand the peculiar
shape of the metal 3d a_{1g} density of states, which is present in both
compounds. The a_{1g} states are subject to pronounced bonding-antibonding
splitting due to metal-metal overlap along the c-axis of the corundum
structure. However, the corresponding partial density of states is strongly
asymmetric with considerably more weight on the high energy branch. We argue
that this asymmetry is due to an unexpected broadening of the bonding a_{1g}
states, which is caused by hybridization with the e_g^{pi} bands. In contrast,
the antibonding a_{1g} states display no such hybridization and form a sharp
peak. Our results shed new light on the role of the a_{1g} orbitals for the
metal-insulator transitions of V2O3. In particular, due to a_{1g} - e_g^{pi}
hybridization, an interpretation in terms of molecular orbital singlet states
on the metal-metal pairs along the c-axis is not an adequate description.Comment: 7 pages, 3 figures, more information at
http://www.physik.uni-augsburg.de/~eyert
On the nature of the magnetic ground-state wave function of V_2O_3
After a brief historical introduction, we dwell on two recent experiments in
the low-temperature, monoclinic phase of V_2O_3: K-edge resonant x-ray
scattering and non-reciprocal linear dichroism, whose interpretations are in
conflict, as they require incompatible magnetic space groups. Such a conflict
is critically reviewed, in the light of the present literature, and new
experimental tests are suggested, in order to determine unambiguously the
magnetic group. We then focus on the correlated, non-local nature of the
ground-state wave function, that is at the basis of some drawbacks of the LDA+U
approach: we singled out the physical mechanism that makes LDA+U unreliable,
and indicate the way out for a possible remedy. Finally we explain, by means of
a symmetry argument related to the molecular wave function, why the magnetic
moment lies in the glide plane, even in the absence of any local symmetry at
vanadium sites.Comment: 7 pages, 1 figur
The Metal-Insulator Transition of the Magneli phase V_4O_7: Implications for V_2O_3
The metal-insulator transition (MIT) of the Magneli phase V_4O_7 is studied
by means of electronic structure calculations using the augmented spherical
wave method. The calculations are based on density functional theory and the
local density approximation. Changes of the electronic structure at the MIT are
discussed in relation to the structural transformations occuring
simultaneously. The analysis is based on a unified point of view of the crystal
structures of all Magneli phase compounds V_nO_2n-1 (3 =< n =< 9) as well as of
VO_2 and V_2O_3. This allows to group the electronic bands into states behaving
similar to the dioxide or the sesquioxide. In addition, the relationship
between the structural and electronic properties near the MIT of these oxides
can be studied on an equal footing. For V_4O_7, a strong influence of
metal-metal bonding across octahedral faces is found for states both parallel
and perpendicular to the hexagonal c_hex axis of V_2O_3. Furthermore, the
structural changes at the MIT cause localization of those states, which mediate
in-plane metal-metal bonding via octahedral edges. This band narrowing opens
the way to an increased influence of electronic correlations, which are
regarded as playing a key role for the MIT of V_2O_3.Comment: 7 pages, 3 figures, more information at
http://www.physik.uni-augsburg.de/~eyert
New magnetic phase in metallic V_{2-y}O_3 close to the metal insulator transition
We have observed two spin density wave (SDW) phases in hole doped metallic
V_{2-y}O_3, one evolves from the other as a function of doping, pressure or
temperature. They differ in their response to an external magnetic field, which
can also induce a transition between them. The phase boundary between these two
states in the temperature-, doping-, and pressure-dependent phase diagram has
been determined by magnetization and magnetotransport measurements. One phase
exists at high doping level and has already been described in the literature.
The second phase is found in a small parameter range close to the boundary to
the antiferromagnetic insulating phase (AFI). The quantum phase transitions
between these states as a function of pressure and doping and the respective
metamagnetic behavior observed in these phases are discussed in the light of
structurally induced changes of the band structure.Comment: REVTeX, 8 pages, 12 EPS figures, submitted to PR
Doping Dependence of the Electronic Structure of Ba_{1-x}K_{x}BiO_{3} Studied by X-Ray Absorption Spectroscopy
We have performed x-ray absorption spectroscopy (XAS) and x-ray photoemission
spectroscopy (XPS) studies of single crystal Ba_{1-x}K_{x}BiO_{3} (BKBO)
covering the whole composition range . Several features in
the oxygen 1\textit{s} core XAS spectra show systematic changes with .
Spectral weight around the absorption threshold increases with hole doping and
shows a finite jump between and 0.40, which signals the
metal-insulator transition. We have compared the obtained results with
band-structure calculations. Comparison with the XAS results of
BaPb_{1-x}Bi_{x}O_{3} has revealed quite different doping dependences between
BKBO and BPBO. We have also observed systematic core-level shifts in the XPS
spectra as well as in the XAS threshold as functions of , which can be
attributed to a chemical potential shift accompanying the hole doping. The
observed chemical potential shift is found to be slower than that predicted by
the rigid band model based on the band-structure calculations.Comment: 8 pages, 8 figures include
Semimetalic antiferromagnetism in the half-Heusler compound CuMnSb
The half-Heusler compound CuMnSb, the first antiferromagnet (AFM) in the
Mn-based class of Heuslers and half-Heuslers that contains several conventional
and half metallic ferromagnets, shows a peculiar stability of its magnetic
order in high magnetic fields. Density functional based studies reveal an
unusual nature of its unstable (and therefore unseen) paramagnetic state, which
for one electron less (CuMnSn, for example) would be a zero gap semiconductor
(accidentally so) between two sets of very narrow, topologically separate bands
of Mn 3d character. The extremely flat Mn 3d bands result from the environment:
Mn has four tetrahedrally coordinated Cu atoms whose 3d states lie well below
the Fermi level, and the other four tetrahedrally coordinated sites are empty,
leaving chemically isolated Mn 3d states. The AFM phase can be pictured
heuristically as a self-doped CuMnSb compensated semimetal
with heavy mass electrons and light mass holes, with magnetic coupling
proceeding through Kondo and/or antiKondo coupling separately through the two
carrier types. The ratio of the linear specific heat coefficient and the
calculated Fermi level density of states indicates a large mass enhancement
, or larger if a correlated band structure is taken as the
reference
The electronic structure and the phases of BaVS3
BaVS3 is a moderately correlated d-electron system with a rich phase diagram.
To construct the corresponding minimal electronic model, one has to decide
which d-states are occupied, and to which extent. The ARPES experiment
presented here shows that the behavior of BaVS3 is governed by the coexistence
of wide-band (A_1g) and narrow-band (twofold degenerate E) d-electrons. We
sketch a lattice fermion model which may serve as a minimal model of BaVS3.
This serves foremost for the understanding of the metal-insulator in pure BaVS3
and its absence in some related compounds. The nature of the low temperature
magnetic order differs for several systems which may be described in terms of
the same electron model. We describe several recent experiments which give
information about magnetic order at high pressures. In particular, we discuss
field-induced insulator-to-metal transition at slightly subcritical pressures,
and an evidence for magnetic order in the high-pressure metallic phase. The
phase diagram of Sr-doped BaVS3 is also discussed. The complexity of the phases
of BaVS3 arises from the fact that it is simultaneously unstable against
several kinds of instabilities.Comment: Presented at the International Conference on Magnetism 2006 (Kyoto),
6 pages, 9 figure
Anharmonic effects in the A15 compounds induced by sublattice distortions
We demonstrate that elastic anomalies and lattice instabilities in the the
A15 compounds are describable in terms of first-principles LDA electronic
structure calculations. We show that at T=0 V_3Si, V_3Ge, and Nb_3Sn are
intrinsically unstable against shears with elastic moduli C_11-C_12 and C_44,
and that the zone center phonons, Gamma_2 and Gamma_12, are either unstable or
extremely soft. We demonstrate that sublattice relaxation (internal strain)
effects are key to understanding the behavior of the A15 materials.Comment: 5 pages, RevTex, 3 postscript figures, Submitted to Phys. Rev. Lett.
Apr. 23, 1997 July 7, 1997: minor corrections, final accepted versio
Photogenerated Carriers in SrTiO3 Probed by Mid-Infrared Absorption
Infrared absorption spectra of SrTiO have been measured under
above-band-gap photoexcitations to study the properties of photogenerated
carriers, which should play important roles in previously reported photoinduced
phenomena in SrTiO. A broad absorption band appears over the entire
mid-infrared region under photoexcitation. Detailed energy, temperature, and
excitation power dependences of the photoinduced absorption are reported. This
photo-induced absorption is attributed to the intragap excitations of the
photogenerated carriers. The data show the existence of a high density of
in-gap states for the photocarriers, which extends over a wide energy range
starting from the conduction and valence band edges.Comment: 5 pages, 5 figures, submitted to J. Phys. Soc. Jp
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