38,395 research outputs found
Strong eigenfunction correlations near the Anderson localization transition
We study overlap of two different eigenfunctions as compared with
self-overlap in the framework of an infinite-dimensional version of the
disordered tight-binding model. Despite a very sparse structure of the
eigenstates in the vicinity of Anderson transition their mutual overlap is
still found to be of the same order as self-overlap as long as energy
separation is smaller than a critical value. The latter fact explains
robustness of the Wigner-Dyson level statistics everywhere in the phase of
extended states. The same picture is expected to hold for usual d-dimensional
conductors, ensuring the form of the level repulsion at critical
point.Comment: 4 pages, RevTe
Microflow valve control system design
A design synthesis for a microflow control system is presented based on the interrogation of an analytical model, testing, and observation. The key issues relating to controlling a microflow using a variable geometry flow channel are explored through the implementation and testing of open and closed-loop control systems. The reliance of closed-loop systems on accurate flow measurement and the need for an open-loop strategy are covered. A valve and control system capable of accurately controlling flowrates between 0.09 and 400 ml/h and with a range of 900:1 is demonstrated
Two-Dimensional Inversion Asymmetric Topological Insulators in Functionalized III-Bi Bilayers
The search for inversion asymmetric topological insulators (IATIs) persists
as an effect for realizing new topological phenomena. However, so for only a
few IATIs have been discovered and there is no IATI exhibiting a large band gap
exceeding 0.6 eV. Using first-principles calculations, we predict a series of
new IATIs in saturated Group III-Bi bilayers. We show that all these IATIs
preserve extraordinary large bulk band gaps which are well above
room-temperature, allowing for viable applications in room-temperature
spintronic devices. More importantly, most of these systems display large bulk
band gaps that far exceed 0.6 eV and, part of them even are up to ~1 eV, which
are larger than any IATIs ever reported. The nontrivial topological situation
in these systems is confirmed by the identified band inversion of the band
structures and an explicit demonstration of the topological edge states.
Interestingly, the nontrivial band order characteristics are intrinsic to most
of these materials and are not subject to spin-orbit coupling. Owning to their
asymmetric structures, remarkable Rashba spin splitting is produced in both the
valence and conduction bands of these systems. These predictions strongly
revive these new systems as excellent candidates for IATI-based novel
applications.Comment: 17 pages,5figure
Improvement of dielectric loss of doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices
Al2O3-Ba0.5Sr0.5TiO3 (Al2O3-BST) thin films, with different Al2O3 contents,
were deposited on (100) LaAlO3 substrate by pulsed laser deposition (PLD)
technique. The Al2O3-BST films was demosnstrated to be a suitable systems to
fabricate ferroelectric thin films with low dielectric loss and higher figure
of merit for tunable microwave devices. Pure BST thin films were also
fabricated for comparison purpose. The films' structure and morphology were
analyzed by X-ray diffractiopn and scanning electron microscopy, respectively;
nad showed that the surface roughness for the Al2O3-BST films increased with
the Al2O3 content. Apart from that, the broadening in the intensity peak in XRD
result indicating the grain size of the Al2O3-BST films reduced with the
increasing of Al2O3 dopant. We measured the dielctric properties of Al2O3-BST
films with a home-made non-destructive dual resonator method at frequency ~ 7.7
GHZ. The effect of doped Al2O3 into BST thin films significantly reduced the
dielectric constant, dielectric loss and tunability compare to pure BST thin
film. Our result shows the figure of merit (K), used to compare the films with
varied dielectric properties, increased with the Al2O3 content. Therefore
Al2O3-BST films show the potential to be exploited in tunable microwave
devices.Comment: 8 pages, 4 figures, 1 table. Accepted & tentatively for Feb 15 2004
issue, Journal of Applied Physic
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