Phonon anomalies in pure and underdoped R{1-x}K{x}Fe{2}As{2} (R = Ba, Sr) investigated by Raman light scattering

We present a detailed temperature dependent Raman light scattering study of optical phonons in Ba{1-x}K{x}Fe{2}As{2} (x ~ 0.28, superconducting Tc ~ 29 K), Sr{1-x}K{x}Fe{2}As{2} (x ~ 0.15, Tc ~ 29 K) and non-superconducting BaFe{2}As{2} single crystals. In all samples we observe a strong continuous narrowing of the Raman-active Fe and As vibrations upon cooling below the spin-density-wave transition Ts. We attribute this effect to the opening of the spin-density-wave gap. The electron-phonon linewidths inferred from these data greatly exceed the predictions of ab-initio density functional calculations without spin polarization, which may imply that local magnetic moments survive well above Ts. A first-order structural transition accompanying the spin-density-wave transition induces discontinuous jumps in the phonon frequencies. These anomalies are increasingly suppressed for higher potassium concentrations. We also observe subtle phonon anomalies at the superconducting transition temperature Tc, with a behavior qualitatively similar to that in the cuprate superconductors.Comment: 5 pages, 6 figures, accepted versio

Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors

An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel conductance threshold. By using such a vertically coupled Al and Si SET system, we have detected a single-charge defect which is tunnel-coupled to the Si SET. By solving a simple electrostatic model, the fractions of each coupling capacitance associated with the defect are extracted. The results reveal that the defect is not a large puddle or metal island, but its size is rather small, corresponding to a sphere with a radius less than 1 nm. The small size of the defect suggests it is most likely a single-charge trap at the Si/SiO_2 interface. Based on the ratios of the coupling capacitances, the interface trap is estimated to be about 20 nm away from the Si SET.Comment: 5 pages and 5 figure

Coulomb blockade in a Si channel gated by an Al single-electron transistor

We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si transistor, and vice versa. Analysis of these correlations using a simple electrostatic model demonstrates that the two single-electron transistor islands are closely aligned, with an inter-island capacitance approximately equal to 1/3 of the total capacitance of the Si transistor island, indicating that the Si transistor is strongly coupled to the Al transistor.Comment: 3 pages, 4 figures, 1 table; typos corrected, minor clarifications added; published in AP

Entanglement between two fermionic atoms inside a cylindrical harmonic trap

We investigate quantum entanglement between two (spin-1/2) fermions inside a cylindrical harmonic trap, making use of the von Neumann entropy for the reduced single particle density matrix as the pure state entanglement measure. We explore the dependence of pair entanglement on the geometry and strength of the trap and on the strength of the pairing interaction over the complete range of the effective BCS to BEC crossover. Our result elucidates an interesting connection between our model system of two fermions and that of two interacting bosons.Comment: to appear in PR

Binomial coefficients, Catalan numbers and Lucas quotients

Let $p$ be an odd prime and let $a,m$ be integers with $a>0$ and $m \not\equiv0\pmod p$. In this paper we determine $\sum_{k=0}^{p^a-1}\binom{2k}{k+d}/m^k$ mod $p^2$ for $d=0,1$; for example, $$\sum_{k=0}^{p^a-1}\frac{\binom{2k}k}{m^k}\equiv\left(\frac{m^2-4m}{p^a}\right)+\left(\frac{m^2-4m}{p^{a-1}}\right)u_{p-(\frac{m^2-4m}{p})}\pmod{p^2},$$ where $(-)$ is the Jacobi symbol, and $\{u_n\}_{n\geqslant0}$ is the Lucas sequence given by $u_0=0$, $u_1=1$ and $u_{n+1}=(m-2)u_n-u_{n-1}$ for $n=1,2,3,\ldots$. As an application, we determine $\sum_{0<k<p^a,\, k\equiv r\pmod{p-1}}C_k$ modulo $p^2$ for any integer $r$, where $C_k$ denotes the Catalan number $\binom{2k}k/(k+1)$. We also pose some related conjectures.Comment: 24 pages. Correct few typo