Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated

Temperature dependent spin momentum densities in Ni-Mn-In alloys

The spin-dependent electron momentum densities in Ni2MnIn and Ni2Mn1.4In0.6 shape memory alloy using magnetic Compton scattering with 182.2 keV circularly polarized synchrotron radiation are reported. The magnetic Compton profiles were measured at different temperatures ranging between 10 and 300 K. The profiles have been analyzed mainly in terms of Mn 3d electrons to determine their role in the formation of the total spin moment. We have also computed the spin polarized energy bands, partial and total density of states, Fermi surfaces and spin moments using full potential linearized augmented plane wave and spin polarized relativistic Korringa-Kohn-Rostoker methods. The total spin moments obtained from our magnetic Compton profile data are explained using both the band structure models. The present Compton scattering investigations are also compared with magnetization measurements