Geometrical effects on the optical properties of quantum dots doped with a single magnetic atom

The emission spectra of individual self-assembled quantum dots containing a single magnetic Mn atom differ strongly from dot to dot. The differences are explained by the influence of the system geometry, specifically the in-plane asymmetry of the quantum dot and the position of the Mn atom. Depending on both these parameters, one has different characteristic emission features which either reveal or hide the spin state of the magnetic atom. The observed behavior in both zero field and under magnetic field can be explained quantitatively by the interplay between the exciton-manganese exchange interaction (dependent on the Mn position) and the anisotropic part of the electron-hole exchange interaction (related to the asymmetry of the quantum dot).Comment: 5 pages, 5 figures, to be published in Phys. Rev. Let

Spin and transport effects in quantum microcavities with polarization splitting

Transport properties of exciton-polaritons in anisotropic quantum microcavities are considered theoretically. Microscopic symmetry of the structure is taken into account by allowing for both the longitudinal-transverse (TE-TM) and anisotropic splitting of polariton states. The splitting is equivalent to an effective magnetic field acting on polariton pseudospin, and polarization conversion in microcavities is shown to be caused by an interplay of exciton-polariton spin precession and elastic scattering. In addition, we considered the spin-dependent interference of polaritons leading to weak localization and calculated coherent backscattering intensities in different polarizations. Our findings are in a very good agreement with the recent experimental data.Comment: 8 pages, 6 figure

Theory of excitons in cubic III-V semiconductor GaAs, InAs and GaN quantum dots: fine structure and spin relaxation

Exciton fine structures in cubic III-V semiconductor GaAs, InAs and GaN quantum dots are investigated systematically and the exciton spin relaxation in GaN quantum dots is calculated by first setting up the effective exciton Hamiltonian. The electron-hole exchange interaction Hamiltonian, which consists of the long- and short-range parts, is derived within the effective-mass approximation by taking into account the conduction, heavy- and light-hole bands, and especially the split-off band. The scheme applied in this work allows the description of excitons in both the strong and weak confinement regimes. The importance of treating the direct electron-hole Coulomb interaction unperturbatively is demonstrated. We show in our calculation that the light-hole and split-off bands are negligible when considering the exciton fine structure, even for GaN quantum dots, and the short-range exchange interaction is irrelevant when considering the optically active doublet splitting. We point out that the long-range exchange interaction, which is neglected in many previous works, contributes to the energy splitting between the bright and dark states, together with the short-range exchange interaction. Strong dependence of the optically active doublet splitting on the anisotropy of dot shape is reported. Large doublet splittings up to 600 $\mu$eV, and even up to several meV for small dot size with large anisotropy, is shown in GaN quantum dots. The spin relaxation between the lowest two optically active exciton states in GaN quantum dots is calculated, showing a strong dependence on the dot anisotropy. Long exciton spin relaxation time is reported in GaN quantum dots. These findings are in good agreement with the experimental results.Comment: 22+ pages, 16 figures, several typos in the published paper are corrected in re

Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields

Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n:GaAs. Optical injection provides a local dc source of polarized electrons, whose subsequent drift and/or diffusion is controlled with electric, magnetic, and - in particular - strain fields. Spin precession induced by controlled uniaxial stress along the axes demonstrates the direct k-linear spin-orbit coupling of electron spin to the shear (off-diagonal) components of the strain tensor.Comment: 5 pages, 5 color figure

Magnetotransport in disordered delta-doped heterostructures

We discuss theoretically how electrons confined to two dimensions in a delta-doped heterostructure can arrange themselves in a droplet-like spatial distribution due to disorder and screening effects when their density is low. We apply this droplet picture to magnetotransport and derive the expected dependence on electron density of several quantities relevant to this transport, in the regimes of weak and moderate magnetic fields. We find good qualitative and quantitative agreement between our calculations and recent experiments on delta-doped heterostructures.Comment: 10 pages RevTeX, 2 figures, uses psfrag; published versio

Slow imbalance relaxation and thermoelectric transport in graphene

We compute the electronic component of the thermal conductivity (TC) and the thermoelectric power (TEP) of monolayer graphene, within the hydrodynamic regime, taking into account the slow rate of carrier population imbalance relaxation. Interband electron-hole generation and recombination processes are inefficient due to the non-decaying nature of the relativistic energy spectrum. As a result, a population imbalance of the conduction and valence bands is generically induced upon the application of a thermal gradient. We show that the thermoelectric response of a graphene monolayer depends upon the ratio of the sample length to an intrinsic length scale l_Q, set by the imbalance relaxation rate. At the same time, we incorporate the crucial influence of the metallic contacts required for the thermopower measurement (under open circuit boundary conditions), since carrier exchange with the contacts also relaxes the imbalance. These effects are especially pronounced for clean graphene, where the thermoelectric transport is limited exclusively by intercarrier collisions. For specimens shorter than l_Q, the population imbalance extends throughout the sample; the TC and TEP asymptote toward their zero imbalance relaxation limits. In the opposite limit of a graphene slab longer than l_Q, at non-zero doping the TC and TEP approach intrinsic values characteristic of the infinite imbalance relaxation limit. Samples of intermediate (long) length in the doped (undoped) case are predicted to exhibit an inhomogeneous temperature profile, whilst the TC and TEP grow linearly with the system size. In all cases except for the shortest devices, we develop a picture of bulk electron and hole number currents that flow between thermally conductive leads, where steady-state recombination and generation processes relax the accumulating imbalance.Comment: 14 pages, 4 figure

Spin tunneling through an indirect barrier

Spin-dependent tunneling through an indirect bandgap barrier like the GaAs/AlAs/GaAs heterostructure along [001] direction is studied by the tight-binding method. The tunneling is characterized by the proportionality of the Dresselhaus Hamiltonians at $\Gamma$ and $X$ points in the barrier and by Fano resonances. The present results suggest that large spin polarization can be obtained for energy windows that exceed significantly the spin splitting. We also formulate two conditions that are necessary for the existence of energy windows with large polarization.Comment: 19 pages, 7 figure

Statistics of the Charging Spectrum of a Two-Dimensional Coulomb Glass Island

The fluctuations of capacitance of a two-dimensional island are studied in the regime of low electron concentration and strong disorder, when electrons can be considered classical particles. The universal capacitance distribution is found, with the dispersion being of the order of the average. This distribution is shown to be closely related to the shape of the Coulomb gap in the one-electron density of states of the island. Behavior of the the capacitance fluctuations near the metal - insulator transition is discussed.Comment: 4 pages, LaTex, 4 Postscript figures are included Discussion of the situation with screening by metallic gate is adde