AINFO versão 5.0: manual on-line.

Introdução; Conhecendo o AINFO; Gerenciador de Dados e outros procedimentos especiais; Administrando o AINFO; Atualizando as bases de dados; Sobre as bases de dados; Imprimindo relatórios; Sobre o SIR - Recuperação de Informação; Descrição dos campos; Descrição dos relatórios; Anexos.bitstream/CNPTIA/11296/1/doc62.pdf2. ed. rev. atual.Acesso em: 28 maio 2008

AINFO - versão 5.0: manual on-line.

O AINFO é um sistema para automação de bibliotecas e recuperação de informação, desenvolvimento em padrão Windows, com arquitetura cliente/servidor baseada no sistema gerenciador de banco de dados relacional Firebird. Pemite o gerenciamento de informação técnico-científica, integrando bases de dados documentais, cadastrais e processos bibliográficos através do armazenamento, atualização, indexação e recuperação de informação de forma simples e rápida, utilizando não apenas recursos de um istema gerenciador de banco de dados, como controle de concorrência e manutenção de integridade das bases de dados, mas também oferecendo facilidades de recuperação de informação textual não disponíveis nesses sistemas.bitstream/CNPTIA/10207/1/doc40.pdfAcesso em: 29 maio 2008

Nanopatterning of epitaxial CoSi₂ using oxidation in a local stress field and fabrication of nanometer metal-oxide-semiconductor field-effect transistors

A patterning method for the generation of epitaxialCoSi₂nanostructures was developed based on anisotropic diffusion of Co∕Si atoms in a stress field during rapid thermal oxidation (RTO). The stress field is generated along the edge of a mask consisting of a thin SiO₂ layer and a Si₃N₄ layer. During RTO of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. The technique was used to make 50-nm channel-length metal-oxide-semiconductor field-effect transistors(MOSFETs). These highly uniform gaps define the channel region of the fabricated device. Two types of MOSFETs have been fabricated: symmetric transistor structures, using the separated silicide layers as Schottky source and drain, and asymmetric transistors, with n+ source and Schottky drain. The asymmetric transistors were fabricated by an ion implantation into the unprotected CoSi₂ layer and a subsequent out diffusion to form the n+ source. The detailed fabrication process as well as the I–V characteristics of both the symmetric and asymmetric transistor structures will be presented

Temperature determination from the lattice gas model

Determination of temperature from experimental data has become important in searches for critical phenomena in heavy ion collisions. Widely used methods are ratios of isotopes (which rely on chemical and thermal equilibrium), population ratios of excited states etc. Using the lattice gas model we propose a new observable: $n_{ch}/Z$ where $n_{ch}$ is the charge multiplicity and $Z$ is the charge of the fragmenting system. We show that the reduced multiplicity is a good measure of the average temperature of the fragmenting system.Comment: 11 pages, 2 ps file

Experimental and theoretical analysis of the upper critical field in FSF trilayers

The upper critical magnetic field H_{c2} in thin-film FSF trilayer spin-valve cores is studied experimentally and theoretically in geometries perpendicular and parallel to the heterostructure surface. The series of samples with variable thicknesses of the bottom and of the top Cu_{41}Ni_{59} F-layers are prepared in a single run, utilizing a wedge deposition technique. The critical field H_{c2} is measured in the temperature range $0.4-8$ K and for magnetic fields up to 9 Tesla. A transition from oscillatory to reentrant behavior of the superconducting transition temperature versus F-layers thickness, induced by an external magnetic field, has been observed for the first time. In order to properly interpret the experimental data, we develop a quasiclassical theory, enabling one to evaluate the temperature dependence of the critical field and the superconducting transition temperature for an arbitrary set of the system parameters. A fairly good agreement between our experimental data and theoretical predictions is demonstrated for all samples, using a single set of fit parameters. This confirms adequacy of the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) physics in determining the unusual superconducting properties of the studied Cu_{41}Ni_{59}/Nb/Cu_{41}Ni_{59} spin-valve core trilayers.Comment: 16 pages, 7 figures; published versio

Relatório de gestão 2001-2004.

Embrapa Informática Agropecuária. Pesquisa e Desenvolvimento. Ações gerenciais estratégicas. Transferência de tecnologia e comunicação empresarial. Gestão Institucional. Prêmios recebidos. Infra-estrutura física. Gestão de Recursos Financeiros. Gestão de Recursos Humanos.bitstream/CNPTIA/10727/1/doc51.pdfAcesso em: 29 maio 2008

Memory Effect and Triplet Pairing Generation in the Superconducting Exchange Biased Co/CoOx/Cu41Ni59/Nb/Cu41Ni59 Layered Heterostructure

We fabricated a nanolayered hybrid superconductor-ferromagnet spin-valve structure, the resistive state of which depends on the preceding magnetic field polarity. The effect is based on a strong exchange bias (about -2 kOe) on a diluted ferromagnetic copper-nickel alloy and generation of a long range odd in frequency triplet pairing component. The difference of high and low resistance states at zero magnetic field is 90% of the normal state resistance for a transport current of 250 {\mu}A and still around 42% for 10 {\mu}A. Both logic states of the structure do not require biasing fields or currents in the idle mode.Comment: 9 pages, 4 figures, Accepted to Applied Physics Letter

Reentrant Superconductivity and Superconducting Critical Temperature Oscillations in F/S/F trilayers of Cu41Ni59/Nb/Cu41Ni59 Grown on Cobalt Oxide

Ferromagnet/Superconductor/Ferromagnet (F/S/F) trilayers constitute the core of a superconducting spin valve. The switching effect of the spin valve is based on interference phenomena occurring due to the proximity effect at the S/F interfaces. A remarkable effect is only expected if the core structure exhibits strong critical temperature oscillations, or most favorable, reentrant superconductivity, when the thickness of the ferromagnetic layer is increased. The core structure has to be grown on an antiferromagnetic oxide layer (or such layer to be placed on top) to pin by exchange bias the magnetization-orientation of one of the ferromagnetic layers. In the present paper we demonstrate that this is possible, keeping the superconducting behavior of the core structure undisturbed.Comment: 22 pages, 12 figures, 1 tabl

Lattice gas model for fragmentation: From Argon on Scandium to Gold on Gold

The recent fragmentation data for central collisions of Gold on Gold are even qualitatively different from those for central collisions of Argon on Scandium. The latter can be fitted with a lattice gas model calculation. Effort is made to understand why the model fails for Gold on Gold. The calculation suggests that the large Coulomb interaction which is operative for the larger system is responsible for this discrepancy. This is demonstrated by mapping the lattice gas model to a molecular dynamics calculation for disassembly. This mapping is quite faithful for Argon on Scandium but deviates strongly for Gold on Gold. The molecular dynamics calculation for disassembly reproduces the characteristics of the fragmentation data for both Gold on Gold and Argon on Scandium.Comment: 13 pages, Revtex, 8 figures in ps files, submitted to Phys. Rev.

Universal Behavior of Lyapunov Exponents in Unstable Systems

We calculate the Lyapunov exponents in a classical molecular dynamics framework. The system is composed of few hundreds particles interacting either through Yukawa (Nuclear) or Slater-Kirkwood (Atomic) forces. The forces are chosen to give an Equation of State that resembles the nuclear and the atomic $^4He$ Equation Of State respectively near the critical point for liquid-gas phase transition. We find the largest fluctuations for an initial "critical temperature". The largest Lyapunov exponents $\lambda$ are always positive and can be very well fitted near this "critical temperature" with a functional form $\lambda\propto |T-T_c|^{-\omega}$, where the exponent $\omega=0.15$ is independent of the system and mass number. At smaller temperatures we find that $\lambda\propto T~ ^{0.4498}$, a universal behavior characteristic of an order to chaos transition.Comment: 11 pages, RevTeX, 3 figures not included available upon reques