Monolithic 45-GHz mode-locked surface-etched DBR laser using quantum-well intermixing technology

The 45-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distributed Bragg mirrors have been fabricated. Quantum-well intermixing was used to provide low absorption loss gratings with accurate wavelength control. The lasers produce 3.6-ps Gaussian pulses with time-bandwidth product of 0.57

10-GHz mode-locked extended cavity laser integrated with surface-etched DBR fabricated by quantum-well intermixing

The 10-GHz passively mode-locked AlGaInAs/InP 1.55- μm extended cavity lasers integrated with optimized surface-etched distributed Bragg mirrors have been fabricated. A quantum-well intermixing process was used to provide low-absorption loss gratings with accurate wavelength control. The lasers produce 2.99-ps sech<sup>2</sup>-pulses with a time-bandwidth product (TBP) of 0.51

High frequency mode-locking of diode lasers

The mode-locked operation of a 160 GHz passively mode-locked AlGaInAs laser using a compound cavity formed by single deeply etched intracavity reflectors has been investigated. Stable harmonic mode-locking is observed in devices with ICRs which have relatively low reflectivity. Higher reflectivity leads to decoupling of the cavity leading first to unstable harmonic modelocking and eventually loss of the harmonic effect

Fast absorption recovery and wavelength conversion in 1.5mm AlInGaAs MQW lasers

In this work we present experimental evidence for values of τα below 5ps in reverse biased AlInGaAs mul tiple quantum wells (MQWs) designed to emit at λ ~ 1.5μm. This materials system is widely used for 1.5μm semiconductor lasers due to its superior performance at high temperatures when compared to equivalent structures using InGaAsP. This effect is observed within the gain peak of the material when forward biased, and so presents an ideal system for the integration of gain elements with fast saturable absorbers

Fast saturable absorption and 10 GHz wavelength conversion in Al-quaternary multiple quantum wells

We measured the absorption recovery times in reverse biased AlInGaAs multiple quantum well material designed to emit at around 1.5 μm wavelength. Absorption recovery times as low as 2.5ps were found at −4V bias, with values below 5ps consistently found for biases above 3V. The short absorption recovery times obtained under reverse bias were confirmed by using cross-absorption modulation in the material to demonstrate wavelength conversion of a 10GHz pulse train, showing both up and down conversion of the incident pulses

Monolithic 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m MQW laser with surface-etched distributed Bragg reflector

We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low-scattering losses and accurate wavelength control. The lasers produce 4.46-ps Gaussian pulses with time-bandwidth product of 0.47

AlGaInAs mode-locked lasers for ultrashort pulse harmonic mode locking

Monolithic AlInGaAs compound-cavity lasers for harmonic ML at multi-GHz frequencies have been fabricated and assessed. Optical pulses of ~1 ps long at 160 GHz have been obtained. The optimal cavity and reflector design has been investigated experimentally and theoretically