Adsorption-Site Investigation of Rb/Cu(111) Using the X-Ray Standing-Wave Method

We have carried out a back reflection x-ray standing-wave investigation to study the adsorbate-substrate bond length and bonding site for the system Rb/Cu(111). Our low-energy electron diffraction study showed an ordered (2×2) phase for one monolayer of Rb on Cu(111) (θ=0.25). By measuring both the (111) and (111¯) Bragg reflections at this coverage, we determine the Rb adsorption to be in the top site. We observe a high degree of order in the Rb overlayer perpendicular to the surface, with large disorder parallel to the surface

Epitaxial Stabilization of Ultrathin Films of Rare-Earth Nickelates

We report on the synthesis of ultrathin films of highly distorted EuNiO3 (ENO) grown by interrupted pulse laser epitaxy on YAlO3 (YAO) substrates. Through mapping the phase space of nickelate thin film epitaxy, the optimal growth temperatures were found to scale linearly with the Goldschmidt tolerance factor. Considering the gibbs energy of the expanding film, this empirical trend is discussed in terms of epitaxial stabilization and the escalation of the lattice energy due to lattice distortions and decreasing symmetry. These findings are fundamental to other complex oxide perovskites, and provide a route to the synthesis of other perovskite structures in ultrathin-film form.Comment: 7 pages, 3 figure

An Incremental Phase Mapping Approach for X-ray Diffraction Patterns using Binary Peak Representations

Despite the huge advancement in knowledge discovery and data mining techniques, the X-ray diffraction (XRD) analysis process has mostly remained untouched and still involves manual investigation, comparison, and verification. Due to the large volume of XRD samples from high-throughput XRD experiments, it has become impossible for domain scientists to process them manually. Recently, they have started leveraging standard clustering techniques, to reduce the XRD pattern representations requiring manual efforts for labeling and verification. Nevertheless, these standard clustering techniques do not handle problem-specific aspects such as peak shifting, adjacent peaks, background noise, and mixed phases; hence, resulting in incorrect composition-phase diagrams that complicate further steps. Here, we leverage data mining techniques along with domain expertise to handle these issues. In this paper, we introduce an incremental phase mapping approach based on binary peak representations using a new threshold based fuzzy dissimilarity measure. The proposed approach first applies an incremental phase computation algorithm on discrete binary peak representation of XRD samples, followed by hierarchical clustering or manual merging of similar pure phases to obtain the final composition-phase diagram. We evaluate our method on the composition space of two ternary alloy systems- Co-Ni-Ta and Co-Ti-Ta. Our results are verified by domain scientists and closely resembles the manually computed ground-truth composition-phase diagrams. The proposed approach takes us closer towards achieving the goal of complete end-to-end automated XRD analysis.Comment: Accepted and presented at the International Workshop on Domain-Driven Data Mining (DDDM) as a part of the SIAM International Conference on Data Mining (SDM 2021). Contains 11 pages and 5 figure

Synthesis of Supported Pd-0 Nanoparticles from a Single-Site Pd2+ Surface Complex by Alkene Reduction

A surface metal-organic complex, (-AlOx)Pd(acac) (acac = acetylacetonate), is prepared by chemically grafting the precursor Pd(acac)(2) onto gamma-Al2O3 in toluene at 25 degrees C. The resulting surface complex is characterized by inductively coupled plasma atomic emission spectroscopy (ICP-AES), X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and dynamic nuclear polarization surface-enhanced solid-state nuclear magnetic resonance spectroscopy (DNP SENS). This surface complex is a precursor in the direct synthesis of size-controlled Pd nanoparticles under mild reductive conditions and in the absence of additional stabilizers or pretreatments. Indeed, upon exposure to gaseous ethylene or liquid 1-octene at 25 degrees C, the Pd2+ species is reduced to form Pd-0 nanoparticles with a mean diameter of 4.3 +/- 0.6 nm, as determined by scanning transmission electron microscopy (STEM). These nanoparticles are catalytically relevant using the aerobic 1-phenylethanol oxidation as a probe reaction, with rates comparable to a conventional Pd/Al2O3 catalyst but without an induction period. Diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) and temperature-programmed reaction mass spectrometry (TPR-MS) reveal that the surface complex reduction with ethylene coproduces H-2, acetylene, and 1,3-butadiene. This process reasonably proceeds via an olefin activation/coordination/insertion pathway, followed by beta-hydride elimination to generate free Pd-0. The well-defined nature of the single-site supported Pd2+ precursor provides direct mechanistic insights into this unusual and likely general reductive process

Model-independent X-ray imaging of adsorbed cations at the crystal-water interface.

Abstract We describe an approach to directly image three-dimensional elemental distributions at the crystal-liquid interface with $1 A spatial resolution. This method, based on the Fourier synthesis of X-ray standing wave data, is demonstrated by imaging the distribution of Sr 2þ , Zn 2þ and Y 3þ adsorbed to the rutile (1 1 0)-water interface with no a priori assumptions. The approach resolves distinct sites and is robust for systems with single or multiple simultaneous adsorption sites. The observed ion distributions reveal unexpected differences in the adsorption sites of these cations that are needed to interpret electrical double-layer phenomena using surface complexation models. Published by Elsevier B.V

Tungsten oxide mediated quasi-van der Waals Epitaxy of WS2 on Sapphire

Conventional epitaxy plays a crucial role in current state-of-the art semiconductor technology, as it provides a path for accurate control at the atomic scale of thin films and nanostructures, to be used as the building blocks in nanoelectronics, optoelectronics, sensors, etc. Four decades ago, the terms “van der Waals” (vdW) and “quasi-vdW (Q-vdW) epitaxy” were coined to explain the oriented growth of vdW layers on 2D and 3D substrates, respectively. The major difference with conventional epitaxy is the weaker interaction between the epi-layer and the epi-substrates. Indeed, research on Q-vdW epitaxial growth of transition metal dichalcogenides (TMDCs) has been intense, with oriented growth of atomically thin semiconductors on sapphire being one of the most studied systems. Nonetheless, there are some striking and not yet understood differences in the literature regarding the orientation registry between the epi-layers and epi-substrate and the interface chemistry. Here we study the growth of WS2 via a sequential exposure of the metal and the chalcogen precursors in a metal–organic chemical vapor deposition (MOCVD) system, introducing a metal-seeding step prior to the growth. The ability to control the delivery of the precursor made it possible to study the formation of a continuous and apparently ordered WO3 mono- or few-layer at the surface of a c-plane sapphire. Such an interfacial layer is shown to strongly influence the subsequent quasi-vdW epitaxial growth of the atomically thin semiconductor layers on sapphire. Hence, here we elucidate an epitaxial growth mechanism and demonstrate the robustness of the metal-seeding approach for the oriented formation of other TMDC layers. This work may enable the rational design of vdW and quasi-vdW epitaxial growth on different material systems

Structure of a passivated Ge surface prepared from aqueous solution,

Abstract The structure of a passivating sulfide layer on Ge(001) was studied using X-ray standing waves and X-ray fluorescence. The sulfide layer was formed by reacting clean Ge substrates in (NH 4 ) 2 S solutions of various concentrations at 80°C. For each treatment, a sulfide layer containing approximately two to three monolayers (ML) of S was formed on the surface, and an ordered structure was found at the interface that contained approximately 0.4 ML of S. Our results suggest the rapid formation of a glassy GeS x layer containing 1.5-2.5 ML S residing atop a partially ordered interfacial layer of bridge-bonded S. The passivating reaction appears to be self-limited to 2-3 ML at this reaction temperature

Adsorption sites of Te on Si(0 0 1)

Abstract Using multiple surface science techniques, we have investigated the structure of 0.3-1 Te monolayers adsorbed on Si(0 0 1). X-ray standing waves, low-energy electron diffraction, temperature-programmed desorption, and Auger electron spectroscopy show a relatively poorly-ordered surface. The disorder is due to two nearly degenerate Te adsorption sites, which tends to double the periodicity along one direction of the surface and reduces adatom/substrate mismatch by slightly increasing the separation of adjacent Te atoms. High-temperature anneals around 575°C increase the degree of local and long-range order, while leaving the average local structure unchanged. Our findings are consistent with recent ab initio molecular dynamics simulations but not with experimental studies wherein surfaces were prepared by desorption of CdTe films

Shape Transition in the Epitaxial Growth of Gold Silicide in Au Thin Films on Si(111)

Growth of epitaxial gold silicide islands on bromine-passivated Si(111) substrates has been studied by optical and electron microscopy, electron probe micro analysis and helium ion backscattering. The islands grow in the shape of equilateral triangles up to a critical size beyond which the symmetry of the structure is broken, resulting in a shape transition from triangle to trapezoid. The island edges are aligned along $Si[110]$ directions. We have observed elongated islands with aspect ratios as large as 8:1. These islands, instead of growing along three equivalent [110] directions on the Si(111) substrate, grow only along one preferential direction. This has been attributed to the vicinality of the substrate surface.Comment: revtex version 3.0, 11 pages 4 figures available on request from [email protected] - IP/BBSR/93-6

Surface and interface studies at APS endstation 5ID-C

Abstract. We have instrumented the 5ID-C hutch of DND-CAT at the Advanced Photon Source (APS) for x-ray surface spectroscopy and scattering. A wide variety of experiments have already been carried out at 5ID-C, including studies on semiconductors, oxides, metals, nanodots, and biomolecular adsorption. We describe the beamline optics, data collection hardware and software, and both diffractometers, a five-circle kappa diffractometer for open-air and liquid-cell experiments, and a psi-circle diffractometer with an integrated ultrahigh vacuum (UHV) chamber, paying particular attention to the requirements of an XSW measurement