Low-Field Electron Emission Capability of Thin Films on Flat Silicon Substrates: Experiments with Mo and General Model for Refractory Metals and Carbon

Herein, we describe a study of the phenomenon of field-induced electron emission from thin films deposited on flat Si substrates. Films of Mo with an effective thickness of 6-10 nm showed room-temperature low-field emissivity; a 100 nA current was extracted at macroscopic field magnitudes as low as 1.4-3.7 V/mu m. This result was achieved after formation treatment of the samples by combined action of elevated temperatures (100-600 degrees C) and the electric field. Morphology of the films was assessed by AFM, SEM, and STM/STS methods before and after the emission tests. The images showed that forming treatment and emission experiments resulted in the appearance of numerous defects at the initially continuous and smooth films; in some regions, the Mo layer was found to consist of separate nanosized islets. Film structure reconstruction (dewetting) was apparently induced by emission-related factors, such as local heating and/or ion irradiation. These results were compared with our previous data obtained in experiments with carbon islet films of similar average thickness deposited onto identical substrates. On this basis, we suggest a novel model of emission mechanism that might be common for thin films of carbon and refractory metals. The model combines elements of the well-known patch field, multiple barriers, and thermoelectric models of low-macroscopic-field electron emission from electrically nanostructured heterogeneous materials

A Blueprint for the Synthesis and Characterization of Thiolated Graphene

Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two-step liquid-phase treatment of graphene oxide (GO). Employing the core-level methods, the introduction of up to 5.1 at.% of thiols is indicated with the simultaneous rise of the C/O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 kΩ/sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart materials