XRD TEM EELS Studies on Memory Device Structures

Over the past decade, numerous emerging memory technologies are being considered as contenders to displace either or both NAND flash and DRAM as scaling limitations of these conventional memories are perceived for applications in mobile devices. Some of these include Magnetic and Spin Transfer Torque Random Access Memory MRAM, STTRAM , Phase Change RAM PCRAM , Ferroelectric RAM and Resistive RAM memories. These technologies can be classified as relying on one of the movements atomic, ionic, electron charge or spin in nanoscale thin films comprising of a variety of materials. The literature shows about 50 elements of the periodic table being investigated for these memory applications owing to their unique physical and chemical properties. Engineering memory devices requires nanoscale characterizations of film stacks for their chemical compositions and crystalline nature in addition to electronic properties such as resistance, magnetization and polarization depending upon the principle involved. This paper focuses on how x ray diffraction XRD , transmission electron microscopy TEM and electron energy loss spectroscopy EELS techniques have been employed to obtain insight into engineering magnetic tunnel junctions MTJ and PCM device