Spin-Orbit torques: Going in the right direction

A connection between low crystalline symmetry and the allowed symmetries of the current-induced torques generated through the spin–orbit interaction opens up their use in devices with perpendicular magnetic anisotropy

Spin polarization control through resonant states in an Fe/GaAs Schottky barrier

Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons transported through the barrier. The results account very well for experimental results including the tunneling of photo-excited electrons, and suggest that the spin polarization (from -100% to 100%) is dependent on the Schottky barrier height. They also suggest that the sign of the spin polarization can be controlled with a bias voltage.Comment: 5 pages, 4 figure

Spintronics: Anatomy of spin–orbit torques

The use of time-resolved X-ray microscopy allows a direct visualization of the magnetization switching for nanomagnets under the effect of spin–orbit torques

Magnetism, symmetry and spin transport in van der Waals layered systems

The discovery of an ever-increasing family of atomic layered magnetic materials, together with the already established vast catalogue of strong spin–orbit coupling and topological systems, calls for some guiding principles to tailor and optimize novel spin transport and optical properties at their interfaces. Here, we focus on the latest developments in both fields that have brought them closer together and make them ripe for future fruitful synergy. After outlining fundamentals on van der Waals magnetism and spin–orbit coupling effects, we discuss how their coexistence, manipulation and competition could ultimately establish new ways to engineer robust spin textures and drive the generation and dynamics of spin current and magnetization switching in 2D-materials-based van der Waals heterostructures. Grounding our analysis on existing experimental results and theoretical considerations, we draw a prospective analysis about how intertwined magnetism and spin–orbit torque phenomena combine at interfaces with well-defined symmetries and how this dictates the nature and figures of merit of spin–orbit torque and angular momentum transfer. This will serve as a guiding role in designing future non-volatile memory devices that utilize the unique properties of 2D materials with the spin degree of freedom