Effect of Calcination Temperature on the Physicochemical Properties and Electrochemical Performance of FeVO₄ as an Anode for Lithium-Ion Batteries

Several electrode materials have been developed to provide high energy density and a long calendar life at a low cost for lithium-ion batteries (LIBs). Iron (III) vanadate (FeVO4), a semiconductor material that follows insertion/extraction chemistry with a redox reaction and provides high theoretical capacity, is an auspicious choice of anode material for LIBs. The correlation is investigated between calcination temperatures, morphology, particle size, physicochemical properties, and their effect on the electrochemical performance of FeVO4 under different binders. The crystallite size, particle size, and tap density increase while the specific surface area (SBET) decreases upon increasing the calcination temperature (500 °C, 600 °C, and 700 °C). The specific capacities are reduced by increasing the calcination temperature and particle size. Furthermore, FeVO4 fabricated with different binders (35 wt.% PAA and 5 wt.% PVDF) and their electrochemical performance for LIBs was explored regarding the effectiveness of the PAA binder. FV500 (PAA and PVDF) initially delivered higher discharge/charge capacities of 1046.23/771.692 mAhg−1 and 1051.21/661.849 mAhg−1 compared to FV600 and FV700 at the current densities of 100 mAg−1, respectively. The intrinsic defects and presence of oxygen vacancy along with high surface area and smaller particle sizes efficiently enhanced the ionic and electronic conductivities and delivered high discharge/charge capacities for FeVO4 as an anode for LIBs

Fabrication of Type-Variable Electronic Paper Using Electrophoretic Particle Loading with Multiple Bottom Electrode Structure

This study suggested the design of type-variable electronic paper with multiple bottom electrode structures and experimentally investigated the process mechanism of the electrophoretic particle loading method (EPLM) as an electronic ink injection method. The type-variable electronic paper was achieved by constructing the multi-electrode structure that had a structure of four electrodes that can independently apply voltage to one cell. By injecting electronic ink that mixes two types of particles with opposite charges into an electrically neutral color (blue) fluid, we realized electronic paper with a single color, and we then measured the optical characteristics of the panel. We used the EPLM to prevent charged particles that have lost their charge from being injected into the e-paper by using an electric field. In order to confirm the color expression and transmittance control effect using the multi-electrode structure, we conducted reflectance measurement and transmittance measurement experiments. Our experiments confirmed that the expression of more than five colors was possible and that the transmittance was controllable to a minimum of 13.50% and a maximum of 71.18%. This study provides an attractive method to create e-paper as a new form outside the framework of existing e-paper technology

Low-Temperature Rapid Fabrication of ZnO Nanowire UV Sensor Array by Laser-Induced Local Hydrothermal Growth

We demonstrate ZnO nanowire based UV sensor by laser-induced hydrothermal growth of ZnO nanowire. By inducing a localized temperature rise using focused laser, ZnO nanowire array at ~15 μm size consists of individual nanowires with ~8 μm length and 200~400 nm diameter is readily synthesized on gold electrode within 30 min at the desired position. The laser-induced growth process is consecutively applied on two different points to bridge the micron gap between the electrodes. The resultant photoconductive ZnO NW interconnections display 2~3 orders increase in the current upon the UV exposure at a fixed voltage bias. It is also confirmed that the amount of photocurrent can be easily adjusted by changing the number of ZnO NW array junctions. The device exhibits clear response to the repeated UV illumination, suggesting that this process can be usefully applied for the facile fabrication of low-cost UV sensor array

Low-Temperature Rapid Fabrication of ZnO Nanowire UV Sensor Array by Laser-Induced Local Hydrothermal Growth

We demonstrate ZnO nanowire based UV sensor by laser-induced hydrothermal growth of ZnO nanowire. By inducing a localized temperature rise using focused laser, ZnO nanowire array at ∼15 m size consists of individual nanowires with ∼8 m length and 200∼400 nm diameter is readily synthesized on gold electrode within 30 min at the desired position. The laser-induced growth process is consecutively applied on two different points to bridge the micron gap between the electrodes. The resultant photoconductive ZnO NW interconnections display 2∼3 orders increase in the current upon the UV exposure at a fixed voltage bias. It is also confirmed that the amount of photocurrent can be easily adjusted by changing the number of ZnO NW array junctions. The device exhibits clear response to the repeated UV illumination, suggesting that this process can be usefully applied for the facile fabrication of low-cost UV sensor array

Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation

In this study, silicon nitride thin films are deposited on organic polyethylene-naphthalate (PEN) substrates by laser assisted plasma enhanced chemical vapor deposition (LAPECVD) at a low temperature (150 °C) for the purpose of evaluating the encapsulation performance. A plasma generator is placed above the sample stage as conventional plasma enhanced chemical vapor deposition (PECVD) configuration, and the excimer laser beam of 193 nm wavelength illuminated in parallel to the sample surface is coupled to the reaction zone between the sample and plasma source. Major roles of the laser illumination in LAPECVD process are to compete with or complement the plasma decomposition of reactant gases. While a laser mainly decomposes ammonia molecules in the plasma, it also contributes to the photolysis of silane in the plasma state, possibly through the resulting hydrogen radicals and the excitation of intermediate disilane products. It will also be shown that the LAPECVD with coupled laser illumination of 193 nm wavelength improves the deposition rate of silicon nitride thin film, and the encapsulation performance evaluated via the measurement of water vapor transmission rate (WVTR)

Sequential Improvement from Cosolvents Ink Formulation to Vacuum Annealing for Ink-Jet Printed Quantum-Dot Light-Emitting Diodes

Optimization of ink-jet printing conditions of quantum-dot (QD) ink by cosolvent process and improvement of quantum-dot light-emitting diodes (QLEDs) characteristics assisted by vacuum annealing were analyzed in this research. A cosolvent process of hexane and ortho-dichlorobenzene (oDCB) was optimized at the ratio of 1:2, and ink-jetting properties were analyzed using the Ohnesorge number based on the parameters of viscosity and surface tension. However, we found that these cosolvents systems cause an increase in the boiling point and a decrease in the vapor pressure, which influence the annealing characteristics of the QD emission layer (EML). Therefore, we investigated QLEDs’ performance depending on the annealing condition for ink-jet printed QD EML prepared using cosolvents systems of hexane and oDCB. We enhanced the quality of QD EML and device performance of QLEDs by a vacuum annealing process, which was used to prevent exposure to moisture and oxygen and to promote effective evaporation of solvent in QD EML. As a result, the characteristics of QLEDs formed using ink-jet printed QD EML annealed under vacuum environment increased luminescence (L), current efficiency (CE), external quantum efficiency (EQE), and lifetime (LT50) by 30.51%, 33.7%, 21.70%, and 181.97%, respectively, compared to QLEDs annealed under air environment

CdSe tetrapod interfacial layer for improving electron extraction in planar heterojunction perovskite solar cells

We demonstrate the improvement in the efficiency of planar heterojunction perovskite solar cells by employing cadmium selenide tetrapods (CdSe TPs) as an electron extraction layer. The insertion of the CdSe TP layer between the titanium oxide (TiO2) and perovskite film facilitates electron transfer at the TiO2/perovskite interface, as indicated by the significantly quenched steady-state photoluminescence of the perovskite film. Furthermore, we observed a conductivity enhancement of the perovskite film by introducing the CdSe TP layer. The combination of both effects induced by the TPs leads to enhancement in the carrier extraction as well as decreased recombination losses in the perovskite solar cells. As a result, an efficiency of 13.5% (1 sun condition) is achieved in the perovskite solar cells that incorporate the CdSe TP layer, which is 10% higher than that of the device without the CdSe TP layer.N

Facile fabrication of flexible metal grid transparent electrode using inkjet-printed dot array as sacrificial layer

In this study, we introduce a flexible metal grid transparent electrode fabricated using a lift-off process. This transparent electrode consisting of metal thin film with punched-like pattern by hole array was fabricated with 8 um separations. The separation of inkjet-printed etching resistant ink droplets was controlled in order to investigate the relationship between its electrical and optical properties of the electrodes. The aluminum areal density was defined to predict the electrical and optical properties of different arrays. A high and uniform transmittance spectrum appears to extend broadly into the UV region. The figure of merit of the transparent electrode was investigated in order to determine its performance as a transparent electrode. Moreover, there was no significant change in the resistance after 7000 bending cycles, indicating that the array conductor had superior stability. We also demonstrate transparent touch screen panels fabricated using the transparent electrode.N

Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method

In this work, operationally and mechanically stable organic field-effect transistors (OFETs) are demonstrated on aramid fiber-based paper enabled by a simple and universal surface planarization method. By employing a nanoimprint lithography-inspired surface smoothening method, rough aramid paper is successfully smoothened from a scale of several tens of micrometers to a sub-nanometer-scale surface roughness. Owing to the sub-nanometer-scale surface roughness of the aramid paper, the OFETs fabricated on the aramid paper exhibit decent field-effect mobility (0.25 cm(2) V-1 s(-1)) with a high current on-to-off ratio (>10(7)), both of which are comparable with those of OFETs fabricated on rigid silicon substrates. Moreover, the OFETs fabricated on the aramid paper exhibit both high operational and mechanical stability; this is indicated by a bias-stress-induced threshold voltage shift ( increment V-TH approximate to 4.27 V under an excessive gate bias stress of 1.7 MV cm(-1) for 1 h 30 min) comparable to that of OFETs on a rigid silicon substrate, moderate field-effect mobility, and a threshold voltage stability under 1000 bending cycles with a compressive strain of 1%. The demonstration of highly stable OFETs on paper enabled by the simple planarization method will expand the potential use of various types of paper in electronic applications.N

Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates

In recent past, for next-generation device opportunities such as sub-10 nm channel field-effect transistors (FETs), tunneling FETs, and high-end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS2) among transition metal dichalcogenides has been actively performed. However, nonavailability on a matured threshold voltage control scheme, like a substitutional doping in Si technology, has been plagued for the prosperity of 2D materials in electronics. Herein, an adjustment scheme for threshold voltage of MoS2 FETs by using self-assembled monolayer treatment via octadecyltrichlorosilane is proposed and demonstrated to show MoS2 FETs in an enhancement mode with preservation of electrical parameters such as field-effect mobility, subthreshold swing, and current on-off ratio. Furthermore, the mechanisms for threshold voltage adjustment are systematically studied by using atomic force microscopy, Raman, temperature-dependent electrical characterization, etc. For validation of effects of threshold voltage engineering on MoS2 FETs, full swing inverters, comprising enhancement mode drivers and depletion mode loads are perfectly demonstrated with a maximum gain of 18.2 and a noise margin of approximate to 45% of 1/2 V-DD. More impressively, quantum dot light-emitting diodes, driven by enhancement mode MoS2 FETs, stably demonstrate 120 cd m(-2) at the gate-to-source voltage of 5 V, exhibiting promising opportunities for future display application