85 research outputs found
Multi-state and non-volatile control of graphene conductivity with surface electric fields
Planar electrodes patterned on a ferroelectric substrate are shown to provide
lateral control of the conductive state of a two-terminal graphene stripe. A
multi-level and on-demand memory control of the graphene resistance state is
demonstrated under low sub-coercive electric fields, with a susceptibility
exceeding by more than two orders of magnitude those reported in a vertical
gating geometry. Our example of reversible and low-power lateral control over
11 memory states in the graphene conductivity illustrates the possibility of
multimemory and multifunctional applications, as top and bottom inputs remain
accessible.Comment: Graphene ferroelectric lateral structure for multi-state and
non-volatile conductivity control, 4 pages, 4 figure
Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3
We present a magnetoresistive-photoresistive device based on the interaction
of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that
undergoes light-induced strain. The magnitude of the resistance and
magnetoresistance in the CoFe film can be controlled by the wavelength of the
incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic
magnetoresistance is detected due to an additional magnetoelastic contribution
to magnetic anisotropy of the CoFe film. This effect may find applications in
photo-sensing systems, wavelength detectors and can possibly open a research
development in light-controlled magnetic switching properties for next
generation magnetoresistive memory devices.Comment: 5 pages, 4 figures, journal pape
Three terminal capacitance technique for magnetostriction and thermal expansion measurements
An instrument has been constructed to measure a large range of
magnetostriction and thermal expansion between room temperature and 4 K in a
superconductive split-coil magnet, that allows investigation in magnetic fields
up to 12 T. The very small bulk samples (up to 1 mm in size) as well as big
ones (up to 13 mm) of the irregular form can be measured. The possibility of
magnetostriction investigation in thin films is shown. A general account is
given of both electrical and the mechanical aspects of the design of
capacitance cell and their associated electronic circuitry. A simple lever
device is proposed to increase the sensitivity twice. The resulting obtained
sensitivity can be 0.5 Angstrom. The performance of the technique is
illustrated by some preliminary measurements of the magnetostriction of
superconducting MgB2, thermal expansion of (La0.8Ba0.2)0.93MnO3 single crystal
and magnetoelastic behavior of the Ni/Si(111) and
La0.7Sr0.3CoO3/SAT0.7CAT0.1LA0.2(001) cantilevers.Comment: 6 pages, 6 figures, journal pape
Superconductivity in Ca-doped graphene
Graphene, a zero-gap semimetal, can be transformed into a metallic,
semiconducting or insulating state by either physical or chemical modification.
Superconductivity is conspicuously missing among these states despite
considerable experimental efforts as well as many theoretical proposals. Here,
we report superconductivity in calcium-decorated graphene achieved by
intercalation of graphene laminates that consist of well separated and
electronically decoupled graphene crystals. In contrast to intercalated
graphite, we find that Ca is the only dopant that induces superconductivity in
graphene laminates above 1.8 K among intercalants used in our experiments such
as potassium, caesium and lithium. Ca-decorated graphene becomes
superconducting at ~ 6 K and the transition temperature is found to be strongly
dependent on the confinement of the Ca layer and the induced charge carrier
concentration. In addition to the first evidence for superconducting graphene,
our work shows a possibility of inducing and studying superconductivity in
other 2D materials using their laminates
Multi-state and non-volatile control of graphene conductivity with surface electric fields
Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is demonstrated under low sub-coercive electric fields, with a susceptibility exceeding by more than two orders of magnitude those reported in a vertical gating geometry. Our example of reversible and low-power lateral control over 11 memory states in the graphene conductivity illustrates the possibility of multimemory and multifunctional applications, as top and bottom inputs remain accessible. (C) 2015 AIP Publishing LLC
Quantum teleportation on a photonic chip
Quantum teleportation is a fundamental concept in quantum physics which now
finds important applications at the heart of quantum technology including
quantum relays, quantum repeaters and linear optics quantum computing (LOQC).
Photonic implementations have largely focussed on achieving long distance
teleportation due to its suitability for decoherence-free communication.
Teleportation also plays a vital role in the scalability of photonic quantum
computing, for which large linear optical networks will likely require an
integrated architecture. Here we report the first demonstration of quantum
teleportation in which all key parts - entanglement preparation, Bell-state
analysis and quantum state tomography - are performed on a reconfigurable
integrated photonic chip. We also show that a novel element-wise
characterisation method is critical to mitigate component errors, a key
technique which will become increasingly important as integrated circuits reach
higher complexities necessary for quantum enhanced operation.Comment: Originally submitted version - refer to online journal for accepted
manuscript; Nature Photonics (2014
Nanomechanical electro-optical modulator based on atomic heterostructures
Two-dimensional atomic heterostructures combined with metallic nanostructures allow one to realize strong light–matter interactions. Metallic nanostructures possess plasmonic resonances that can be modulated by graphene gating. In particular, spectrally narrow plasmon resonances potentially allow for very high graphene-enabled modulation depth. However, the modulation depths achieved with this approach have so far been low and the modulation wavelength range limited. Here we demonstrate a device in which a graphene/hexagonal boron nitride heterostructure is suspended over a gold nanostripe array. A gate voltage across these devices alters the location of the two-dimensional crystals, creating strong optical modulation of its reflection spectra at multiple wavelengths: in ultraviolet Fabry–Perot resonances, in visible and near-infrared diffraction-coupled plasmonic resonances and in the mid-infrared range of hexagonal boron nitride's upper Reststrahlen band. Devices can be extremely subwavelength in thickness and exhibit compact and truly broadband modulation of optical signals using heterostructures of two-dimensional materials
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