Modern Car Handbook

The handbook presents innovative technologies of a modern car. Cars with internal combustion engines are mainly overviewed. Hybrid and electric vehicles are presented as well. Great attention is paid to technologies that ensure fuel economy and reduction of gas emissions. The newest internal combustion engine technology is presented and explained. The car passengers and driver safety systems are widely considered. The assist and self-adaptive technology principles for safely ride are reviewed and discussed too. Also, an introduction in the latest technologies that help to protect the surrounding road users and particularly pedestrians is delivered. Car security issues and some recommendations to protect your car from theft are introduced. Car computers elements and its applications for car control and diagnosis are examined. Widely and in details are discussed sensor system which applies in a modern car. Sensors operation principles (physics) and technologies are studied and presented as well.Experimental Version. Non-profit editio

Peculiarities of excitonic photoluminescence in Si δ-Doped GaAs structures

We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures

Enhancement of the excitonic photoluminescence in n+/i-GaAs by controlling the thickness and impurity concentration of the n+ layer

This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, NSi = 1017 cm-3 and NSi = 1018 cm-3, was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the n+/i-GaAs homojunction are discusse