167 research outputs found
Phonon Anomalies, Orbital-Ordering and Electronic Raman Scattering in iron-pnictide Ca(Fe0.97Co0.03)2As2: Temperature-dependent Raman Study
We report inelastic light scattering studies on Ca(Fe0.97Co0.03)2As2 in a
wide spectral range of 120-5200 cm-1 from 5K to 300K, covering the tetragonal
to orthorhombic structural transition as well as magnetic transition at Tsm ~
160K. The mode frequencies of two first-order Raman modes B1g and Eg, both
involving displacement of Fe atoms, show sharp increase below Tsm.
Concomitantly, the linewidths of all the first-order Raman modes show anomalous
broadening below Tsm, attributed to strong spin-phonon coupling. The high
frequency modes observed between 400-1200 cm-1 are attributed to the electronic
Raman scattering involving the crystal field levels of d-orbitals of Fe2+. The
splitting between xz and yz d-orbital levels is shown to be ~ 25 meV which
increases as temperature decreases below Tsm. A broad Raman band observed at ~
3200 cm-1 is assigned to two-magnon excitation of the itinerant Fe 3d
antiferromagnet.Comment: Accepted for Publication in JPC
Anomalous Raman scattering from phonons and electrons of superconducting FeSe
We report interesting anomalies in the temperature dependent Raman spectra of
FeSe measured from 3K to 300K in the spectral range from 60 to 1800
cm and determine their origin using complementary first-principles
density functional calculations. A phonon mode near 100 cm exhibits a
sharp increase by 5% in frequency below a temperature T ( 100
K) attributed to strong spin-phonon coupling and onset of short-range
antiferromagnetic order. In addition, two high frequency modes are observed at
1350 cm and 1600 cm, attributed to electronic Raman scattering
from ()to / -orbitals of Fe.Comment: 19 pages, 4 figures, 1 tabl
Metallic monoclinic phase in VO induced by electrochemical gating: in-situ Raman study
We report in-situ Raman scattering studies of electrochemically top gated
VO thin film to address metal-insulator transition (MIT) under gating. The
room temperature monoclinic insulating phase goes to metallic state at a gate
voltage of 2.6 V. However, the number of Raman modes do not change with
electrolyte gating showing that the metallic phase is still monoclinic. The
high frequency Raman mode A(7) near 616 cm ascribed to V-O vibration
of bond length 2.06 \AA~ in VO octahedra hardens with increasing gate
voltage and the B(3) mode near 654 cm softens. This shows that the
distortion of the VO octahedra in the monoclinic phase decreases with
gating. The time dependent Raman data at fixed gate voltages of 1 V (for 50
minute, showing enhancement of conductivity by a factor of 50) and 2 V (for 130
minute, showing further increase in conductivity by a factor of 5) show similar
changes in high frequency Raman modes A(7) and B(3) as observed in
gating. This slow change in conductance together with Raman frequency changes
show that the governing mechanism for metalization is more likely to the
diffusion controlled oxygen vacancy formation due to the applied electric
field.Comment: 5 pages, 6 figure
Application of Value Stream Mapping for Reduction of Cycle Time in a Machining Process
AbstractLean manufacturing initiative is being followed by various organizations in the recent years which mainly focuses on improving the efficiency of operations by eliminating and reducing wastes. This paper aimed to explain the implementation of lean manufacturing techniques in the crankshaft manufacturing system at an automotive manufacturing plant located in south India.. A multi criteria decision making model, analytical hierarchy process is applied to analyze the decision making process in the manufacturing system. The objective of the case industry was to increase the export sales. Lean manufacturing system was selected to meet the company“s quality, cost and delivery targets. Crankshaft was manufactured in a single piece flow system with the low cost machines developed indigenously and the results are that the crankshafts have passed the testing, validation and approval by the customer to produce any variant in the company. After implementing lean manufacturing system, the manufacturing lead time reduced by forty percent, defects were reduced, higher process capability achieved, quick response to the customer demand in small lots were achieved
Electron-Hole Asymmetry in the Electron-phonon Coupling in Top-gated Phosphorene Transistor
Using in-situ Raman scattering from phosphorene channel in an
electrochemically top-gated field effect transistor, we show that its phonons
with A symmetry depend much more strongly on concentration of electrons
than that of holes, while the phonons with B symmetry are insensitive to
doping. With first-principles theoretical analysis, we show that the observed
electon-hole asymmetry arises from the radically different constitution of its
conduction and valence bands involving and bonding states
respectively, whose symmetry permits coupling with only the phonons that
preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool
for measuring electron concentration in phosphorene-based nanoelectronic
devices
Superconducting Fluctuations and Anomalous Phonon Renormalization much above superconducting transition temperature in Ca4Al2O5.7Fe2As2
Raman studies on Ca4Al2O5.7Fe2As2 superconductor in the temperature range of
5 K to 300 K, covering the superconducting transition temperature Tc ~ 28.3 K,
reveal that the Raman mode at ~ 230 cm-1 shows a sharp jump in frequency by ~ 2
% and linewidth increases by ~ 175 % at To ~ 60 K. Below To, anomalous
softening of the mode frequency and a large decrease by ~ 10 cm-1 in the
linewidth is observed. These precursor effects at T0 (~ 2Tc) are attributed to
significant superconducting fluctuations, possibly enhanced due to reduced
dimensionality arising from weaked coupling between the well separated (~ 15
{\AA}) Fe-As layers in the unit cell. A large blue-shift of the mode frequency
between 300 K to 60 K (~7%) indicates strong spin-phonon coupling in this
superconductor.Comment: Iron based Superconducto
Targeting beclin1 as an adjunctive therapy against hiv using mannosylated polyethylenimine nanoparticles
Using nanoparticle-based RNA interference (RNAi), we have previously shown that silenc-ing the host autophagic protein, Beclin1, in HIV-infected human microglia and astrocytes restricts HIV replication and its viral-associated inflammatory responses. Here, we confirmed the efficacy of Beclin1 small interfering RNA (siBeclin1) as an adjunctive antiviral and anti-inflammatory therapy in myeloid human microglia and primary human astrocytes infected with HIV, both with and without exposure to combined antiretroviral (cART) drugs. To specifically target human microglia and human astrocytes, we used a nanoparticle (NP) comprised of linear cationic polyethylenimine (PEI) conjugated with mannose (Man) and encapsulated with siBeclin1. The target specificity of the PEI-Man NP was confirmed in vitro using human neuronal and glial cells transfected with the NP encapsulated with fluorescein isothiocyanate (FITC). PEI-Man-siBeclin1 NPs were intranasally deliv-ered to healthy C57BL/6 mice in order to report the biodistribution of siBeclin1 in different areas of the brain, measured using stem-loop RT-PCR. Postmortem brains recovered at 1–48 h post-treatment with the PEI-Man-siRNA NP showed no significant changes in the secretion of the chemokines regulated on activation, normal T cell expressed and secreted (RANTES) and monocyte chemotactic protein-1 (MCP-1) and showed significant decreases in the secretion of the cytokines interleukin 6 (IL-6) and tumor necrosis factor alpha (TNF-α) when compared to phosphate-buffered saline (PBS)-treated brains. Nissl staining showed minimal differences between the neuronal structures when compared to PBS-treated brains, which correlated with no adverse behavioral affects. To confirm the brain and peripheral organ distribution of PEI-siBeclin1 in living mice, we used the In vivo Imaging System (IVIS) and demonstrated a significant brain accumulation of siBeclin1 through intranasal administration
Coupled Phonons, Magnetic Excitations and Ferroelectricity in AlFeO3: Raman and First-principles Studies
We determine the nature of coupled phonons and magnetic excitations in AlFeO3
using inelastic light scattering from 5 K to 315 K covering a spectral range
from 100-2200 cm-1 and complementary first-principles density functional
theory-based calculations. A strong spin-phonon coupling and magnetic ordering
induced phonon renormalization are evident in (a) anomalous temperature
dependence of many modes with frequencies below 850 cm-1, particularly near the
magnetic transition temperature Tc ~ 250 K, (b) distinct changes in band
positions of high frequency Raman bands between 1100-1800 cm-1, in particular a
broad mode near 1250 cm-1 appears only below Tc attributed to the two-magnon
Raman scattering. We also observe weak anomalies in the mode frequencies at ~
100 K, due to a magnetically driven ferroelectric phase transition.
Understanding of these experimental observations has been possible on the basis
of first-principles calculations of phonons spectrum and their coupling with
spins
Dark Matter and Experiments for its Identification
After Fritz Zwicky, through various theoretical models, several dark matter events have been proposed. but none of them is yet discovered. Recent experiment shows that only around 5% of the total matters present in the whole universe are visual. Rest matter is still unknown to us by any present experimental tools. this leads that detection of dark matter is one of the very challenging & curios goal for experimental physicists. For the search of suitable dark matter candidates and for rear physics events, high Purity germanium detectors, Spherical gaseous chamber detector and few more hybrid-detectors are suitable for these purposes. We proposed that any suitable detector hosted under deep sea water will be more effective than the under ground or mountain caverns
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