Towards device-size atomistic models of amorphous silicon

The atomic structure of amorphous materials is believed to be well described by the continuous random network model. We present an algorithm for the generation of large, high-quality continuous random networks. The algorithm is a variation of the "sillium" approach introduced by Wooten, Winer, and Weaire. By employing local relaxation techniques, local atomic rearrangements can be tried that scale almost independently of system size. This scaling property of the algorithm paves the way for the generation of realistic device-size atomic networks.Comment: 7 pages, 3 figure

Tacit skill and performance at work

The role of tacit knowledge in skill performance has been relatively neglected by psychologists. This paper considers some recent developments in experimental and applied research for effective performance at work. Two aspects of tacit knowledge are identified and these are examined in relation to both laboratory and field studies. Both practical and theoretical implications for skill development are considered