Roadmap for gallium arsenide spin qubits

Gate-defined quantum dots in gallium arsenide (GaAs) have been used extensively for pioneering spin qubit devices due to the relative simplicity of fabrication and favourable electronic properties such as a single conduction band valley, a small effective mass, and stable dopants. GaAs spin qubits are readily produced in many labs and are currently studied for various applications, including entanglement, quantum non-demolition measurements, automatic tuning, multi-dot arrays, coherent exchange coupling, and teleportation. Even while much attention is shifting to other materials, GaAs devices will likely remain a workhorse for proof-of-concept quantum information processing and solid-state experiments.Comment: This section is part of a roadmap on quantum technologies and comprises 4 pages with 2 figure

Giant spin rotation under quasiparticle-photoelectron conversion: Joint effect of sublattice interference and spin-orbit coupling

Spin- and angular-resolved photoemission spectroscopy is a basic experimental tool for unveiling spin polarization of electron eigenstates in crystals. We prove, by using spin-orbit coupled graphene as a model, that photoconversion of a quasiparticle inside a crystal into a photoelectron can be accompanied with a dramatic change in its spin polarization, up to a total spin flip. This phenomenon is typical of quasiparticles residing away from the Brillouin zone center and described by higher rank spinors, and results in exotic patterns in the angular distribution of photoelectrons.Comment: 5 pages, 4 figures, improved presentation and figures, added reference

Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions

We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.Comment: 4 pages, 4 figures. Changes in response to reviewer comments. New data provide information about the mechanism causing the AMR and TAM

Coupling of spin and orbital motion of electrons in carbon nanotubes

Electrons in atoms possess both spin and orbital degrees of freedom. In non-relativistic quantum mechanics, these are independent, resulting in large degeneracies in atomic spectra. However, relativistic effects couple the spin and orbital motion leading to the well-known fine structure in their spectra. The electronic states in defect-free carbon nanotubes (NTs) are widely believed to be four-fold degenerate, due to independent spin and orbital symmetries, and to also possess electron-hole symmetry. Here we report measurements demonstrating that in clean NTs the spin and orbital motion of electrons are coupled, thereby breaking all of these symmetries. This spin-orbit coupling is directly observed as a splitting of the four-fold degeneracy of a single electron in ultra-clean quantum dots. The coupling favours parallel alignment of the orbital and spin magnetic moments for electrons and anti-parallel alignment for holes. Our measurements are consistent with recent theories that predict the existence of spin-orbit coupling in curved graphene and describe it as a spin-dependent topological phase in NTs. Our findings have important implications for spin-based applications in carbon-based systems, entailing new design principles for the realization of qubits in NTs and providing a mechanism for all-electrical control of spins in NTs.Comment: 14 pages, 6 figure

Measurement of discrete energy-level spectra in individual chemically synthesized gold nanoparticles.

We form single-electron transistors from individual chemically-synthesized gold nanoparticles, 5-15 nm in diameter, with monolayers of organic molecules serving as tunnel barriers. These devices allow us to measure the discrete electronic energy levels of individual gold nanoparticles that are, by virtue of chemical synthesis, well-defined in their composition, size and shape. We show that the nanoparticles are non-magnetic and have spectra in good accord with random-matrix-theory predictions taking into account strong spin-orbit coupling.Comment: 15 pages, 5 figures; corrected typos, added journal referenc

Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate

Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double- and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing technique that is compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed charge stability diagrams of double- and triple-dot arrays in Si/SiGe heterostructures as well as pulsed-gate single-shot charge and spin readout with integration times as low as 2.4 $\mu$s.Comment: 10 pages, 5 figures, plus supplementary information with 9 pages and 6 figure

Spin-orbit effects in carbon-nanotube double quantum dots

We study the energy spectrum of symmetric double quantum dots in narrow-gap carbon nanotubes with one and two electrostatically confined electrons in the presence of spin-orbit and Coulomb interactions. Compared to GaAs quantum dots, the spectrum exhibits a much richer structure because of the spin-orbit interaction that couples the electron's isospin to its real spin through two independent coupling constants. In a single dot, both constants combine to split the spectrum into two Kramers doublets, while the antisymmetric constant solely controls the difference in the tunneling rates of the Kramers doublets between the dots. For the two-electron regime, the detailed structure of the spin-orbit split energy spectrum is investigated as a function of detuning between the quantum dots in a 22-dimensional Hilbert space within the framework of a single-longitudinal-mode model. We find a competing effect of the tunneling and Coulomb interaction. The former favors a left-right symmetric two-particle ground state, while in the regime where the Coulomb interaction dominates over tunneling, a left-right antisymmetric ground state is found. As a result, ground states on both sides of the $(11)$-$(02)$ degeneracy point may possess opposite left-right symmetry, and the electron dynamics when tuning the system from one side of the $(11)$-$(02)$ degeneracy point to the other is controlled by three selection rules (in spin, isospin, and left-right symmetry). We discuss implications for the spin-dephasing and Pauli blockade experiments.Comment: revised version, accepted for publication in Phys. Rev.

Symmetric Operation of the Resonant Exchange Qubit

We operate a resonant exchange qubit in a highly symmetric triple-dot configuration using IQ-modulated RF pulses. At the resulting three-dimensional sweet spot the qubit splitting is an order of magnitude less sensitive to all relevant control voltages, compared to the conventional operating point, but we observe no significant improvement in the quality of Rabi oscillations. For weak driving this is consistent with Overhauser field fluctuations modulating the qubit splitting. For strong driving we infer that effective voltage noise modulates the coupling strength between RF drive and the qubit, thereby quickening Rabi decay. Application of CPMG dynamical decoupling sequences consisting of up to n = 32 {\pi} pulses significantly prolongs qubit coherence, leading to marginally longer dephasing times in the symmetric configuration. This is consistent with dynamical decoupling from low frequency noise, but quantitatively cannot be explained by effective gate voltage noise and Overhauser field fluctuations alone. Our results inform recent strategies for the utilization of partial sweet spots in the operation and long-distance coupling of triple-dot qubits.Comment: 6 pages, 5 figure

Negative spin exchange in a multielectron quantum dot

By operating a one-electron quantum dot (fabricated between a multielectron dot and a one-electron reference dot) as a spectroscopic probe, we study the spin properties of a gate-controlled multielectron GaAs quantum dot at the transition between odd and even occupation number. We observe that the multielectron groundstate transitions from spin-1/2-like to singlet-like to triplet-like as we increase the detuning towards the next higher charge state. The sign reversal in the inferred exchange energy persists at zero magnetic field, and the exchange strength is tunable by gate voltages and in-plane magnetic fields. Complementing spin leakage spectroscopy data, the inspection of coherent multielectron spin exchange oscillations provides further evidence for the sign reversal and, inferentially, for the importance of non-trivial multielectron spin exchange correlations.Comment: 8 pages, including 4 main figures and 2 supplementary figurure