64Gb/s transmission over 57m MMF using an NRZ modulated 850nm VCSEL

We report a directly modulated 850nm VCSEL-based optical link operating error free (BER < 1E-12) at 64Gb/s over 57m of OM4 multimode fiber. At 60Gb/s, the error free distance increases to 107m

A 50 Gb/s NRZ Modulated 850nm VCSEL Transmitter Operating Error Free to 90\ub0C

We report on the properties of an 850nm VCSEL transmitter running at 50Gb/s with NRZ modulation from 30\ub0C to 90\ub0C. This is the highest transmitter operating temperature at 50Gb/s for a VCSEL link of any wavelength. This achievement is made possible by a combination of a high speed VCSEL design and driver and receiver circuits that incorporate equalization. Without equalization, the highest temperature attained with BE

A 50 Gb/s NRZ Modulated 850nm VCSEL Transmitter Operating Error Free to 90°C

We report on the properties of an 850nm VCSEL transmitter running at 50Gb/s with NRZ modulation from 30°C to 90°C. This is the highest transmitter operating temperature at 50Gb/s for a VCSEL link of any wavelength. This achievement is made possible by a combination of a high speed VCSEL design and driver and receiver circuits that incorporate equalization. Without equalization, the highest temperature attained with BER <1E-12 is 57°C

70+ Gb/s VCSEL-based multimode fiber links

We report on an 850nm VCSEL based link operating error free to 71 Gb/s using an NRZ modulation format. This optical link uses custom transmitter and receiver ICs with 2-tap Feed Forward Equalization implemented in 130nm BiCMOS and GaAs based VCSELs and photodiodes. This paper covers new aspects of the circuits and packaging

A 71 Gb/s NRZ Modulated 850 nm VCSEL-based Optical Link

We report error free (BER<10-12) operation of a directly NRZ modulated 850 nm VCSEL link operating to 71 Gb/s. This is the highest error free modulation rate for a directly modulated laser of any type. The optical link consists of a 130 nm BiCMOS driver IC with 2-tap feed-forward equalization, a wide bandwidth 850 nm VCSEL, a surface illuminated GaAs PIN photodiode and a 130 nm BiCMOS receiver IC