Оценка влияния избыточного содержания пальмового масла в рационе и экстракта гарцинии камбоджийской на морфогенез костной системы у белых крыс различного возраста

ГАРЦИНИЯ КАМБОДЖИЙСКАЯ /ДЕЙСТВ ПРЕПМОРФОГЕНЕЗ /ДЕЙСТВ ПРЕПКОСТНО-МЫШЕЧНАЯ СИСТЕМА /ДЕЙСТВ ПРЕП /ПАТОЛОГКРЫСЫКРЫСЫ ЛАБОРАТОРНЫЕЭКСПЕРИМЕНТЫ НА ЖИВОТНЫХМАСЛАМАСЛА РАСТИТЕЛЬНЫЕРАСТИТЕЛЬНЫЕ МАСЛАСКЕЛЕТОЖИРЕНИЕКОСТЬ И КОСТНЫЕ ТКАНИ /ДЕЙСТВ ПРЕП /ПАТОЛОГПЛЕЧЕВАЯ КОСТЬ /ДЕЙСТВ ПРЕП /ПАТОЛОГБОЛЬШЕБЕРЦОВАЯ КОСТЬ /ДЕЙСТВ ПРЕП /ПАТОЛОГРОСТА ЗОНА ЭПИФИЗАРНАЯ /ДЕЙСТВ ПРЕП /ПАТОЛОГХРЯЩ ЭПИФИЗАРНЫЙ /ДЕЙСТВ ПРЕП /ПАТОЛОГЭПИФИЗАРНАЯ ЗОНА РОСТА /ДЕЙСТВ ПРЕП /ПАТОЛОГЭПИФИЗАРНАЯ РОСТОВАЯ ПЛАСТИНКА /ДЕЙСТВ ПРЕП /ПАТОЛОГЭПИФИЗАРНЫЙ ХРЯЩ /ДЕЙСТВ ПРЕП /ПАТОЛОГХРЯЩ /ДЕЙСТВ ПРЕП /ПАТОЛОГНАДКОСТНИЦА /ДЕЙСТВ ПРЕП /ПАТОЛОГДИАФИЗЫ /ДЕЙСТВ ПРЕП /ПАТОЛОГОСТЕОГЕНЕЗ /ДЕЙСТВ ПРЕПОКОСТЕНЕНИЕ ФИЗИОЛОГИЧЕСКОЕ /ДЕЙСТВ ПРЕППРОКСИМАЛЬНЫЕ ЭПИФИЗАРНЫЕ ХРЯЩИЭКСТРАКТ ГАРЦИНИИ КАМБОДЖИЙСКОЙБЕЛЫЕ КРЫСЫПАЛЬМОВОЕ МАСЛОРАЦИОН ПИТАНИ

Back and front contacts in kesterite solar cells: state-of-the-art and open questions

We review the present state-of-the-art within back and front contacts in kesterite thin film solar cells, as well as the current challenges. At the back contact, molybdenum (Mo) is generally used, and thick Mo(S, Se)2 films of up to several hundred nanometers are seen in record devices, in particular for selenium-rich kesterite. The electrical properties of Mo(S, Se)2 can vary strongly depending on orientation and indiffusion of elements from the device stack, and there are indications that the back contact properties are less ideal in the sulfide as compared to the selenide case. However, the electronic interface structure of this contact is generally not well-studied and thus poorly understood, and more measurements are needed for a conclusive statement. Transparent back contacts is a relatively new topic attracting attention as crucial component in bifacial and multijunction solar cells. Front illuminated efficiencies of up to 6% have so far been achieved by adding interlayers that are not always fully transparent. For the front contact, a favorable energy level alignment at the kesterite/CdS interface can be confirmed for kesterite absorbers with an intermediate [S]/([S]+[Se]) composition. This agrees with the fact that kesterite absorbers of this composition reach highest efficiencies when CdS buffer layers are employed, while alternative buffer materials with larger band gap, such as Cd1−xZnxS or Zn1−xSnxOy, result in higher efficiencies than devices with CdS buffers when sulfur-rich kesterite absorbers are used. Etching of the kesterite absorber surface, and annealing in air or inert atmosphere before or after buffer layer deposition, has shown strong impact on device performance. Heterojunction annealing to promote interdiffusion was used for the highest performing sulfide kesterite device and air-annealing was reported important for selenium-rich record solar cells

Process modelling for reactive magnetron sputtering

Reactive magnetron sputtering is a widely used technique for deposition of various compound thin films such as oxides and nitrides. This contribution deals with process modelling for reactive sputtering. A brief discussion of the hysteresis effect and classical Berg’s model is presented, followed by examples of application. Finally, some current topics in reactive sputtering are presented.VWII

Reactive magnetron sputtering : from fundamentals to high deposition rate processes

Reactive magnetron sputtering is widely used for synthesis of various compound thin films. The technique is very versatile and scalable. Especially in industry, high productivity is essential and there is a need for processes with high deposition rates. Achieving high deposition rate and true compound stoichiometry of the deposited film is, however, challenging in reactive sputtering. As a consequence of complex interaction between the reactive gas and the sputtered metal, the relation between deposition rate or composition of the coating and flow of reactive gas is very non-linear and usually exhibits hysteresis behaviour. This contribution deals with modelling based development of reactive sputtering processes. First, the basic model of reactive sputtering is briefly reviewed. A steady state model is derived, discussing the most important assumptions and illustrating the physical processes taking place in reactive sputtering. The model is then used to discuss some strategies for high deposition rate processes, such as using high pumping speed or substoichiometric targets. Another strategy for increased deposition rate employs sputtering yield amplification. Here, the sputtering target is doped by a heavy element in order to reduce the depth of collision cascades thus increasing the sputtering yield of target. This technique is suitable for reactive sputtering of oxides as demonstrated for reactive deposition of Al2O3 with W doping. In this case, the deposition rate may be increased by about 100% as confirmed experimentally. Although reactive sputtering is well understood, recent research on reactive High Power Impulse Magnetron Sputtering (HiPIMS) brought some intriguing experimental results. In order to develop a comprehensive model applicable to reactive HiPIMS, more accurate description of the individual effects taking place in sputtering is essential. As a first step towards such a model, discharge current behaviour in reactive HiPIMS is analysed. It is shown that in HiPIMS, the discharge behaviour is strongly influenced by ionized particles sputtered from the target

On the description of metal ion return in reactive high power impulse magnetron sputtering

Back-attraction of ionized metal is an important process in reactive high power impulse magnetron sputtering (R-HiPIMS). Here, we discuss the implementation of the metal return in balance type models for reactive magnetron sputtering. We show that the existing description of surface processes needs to be modified to satisfy mass conservation. A new steady-state time-averaged model is presented and used to evaluate the effect of the metal return in R-HiPIMS. The results show that the metal return leads to an increased oxide fraction in the deposited coating in R-HiPIMS. This effect can explain the high rate deposition of stoichiometric compounds deposited in the metal mode of operation that has been observed experimentally

Tailoring residual stresses in CrNx films on alumina and silicon deposited by high-power impulse magnetron sputtering

Chromium nitride films, deposited using reactive magnetron sputtering, were optimised for wear resistance. The performance was measured by scratch resistance and optimised by tailoring the residual stresses. The depositions were carried out with either direct current magnetron sputtering (DCMS) or high-power impulse magnetron sputtering (HiPIMS), and with varying substrate bias and nitrogen gas flow. With DCMS, all films remained under tensile stresses and exhibited poor performance in scratch testing. Although the tensile stresses could be reduced by increasing the nitrogen flow, compressive stresses could only be induced when employing HiPIMS. Substrate bias had a strong effect in HiPIMS in contrast to the DCMS. The effect of the substrate bias in HiPIMS can be explained by the high ionisation of the flux of film forming species. In all cases, increased nitrogen flow favoured formation of CrN over Cr2N. All films showed signs of limited adhesion, which was improved using a titanium interlayer. Cracking across the scratch could be completely avoided for films with lower tensile or compressive stresses, the latter also exhibiting the highest critical load. The results show that it is possible to increase the scratch resistance by tailoring the residual stresses, for which HiPIMS proved a very useful tool

High rate reactive magnetron sputter deposition of titanium oxide

A systematic experimental study of reactive sputtering from substoichiometric targets of TiOx with x ranging from 0 to 1.75 is reported. Experimental results are compared with results from modeling. The developed model describes the observed behavior and explains the origins of the unexpectedly high deposition rate. The behavior is shown to originate from the presence of titanium suboxides at the target surface caused by preferential sputtering of the oxide. The model can be used for optimization of the target composition with respect to the deposition rate and film composition in a stable hysteresis-free reactive sputtering process

Room Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronics

Amorphous oxide semiconductors (AOSs) are interesting materials which combine optical transparency with high electron mobility. AOSs can be prepared at low temperatures by high throughput deposition techniques such as magnetron sputtering and are thus suitable for flexible transparent electronics such as flexible displays, thin-film transistors, and sensors. In magnetron sputtering the energy input into the growing film can be controlled by the plasma conditions instead of the substrate temperature. Here, we report on magnetron sputtering of InGaZnO (IGZO) and ZnSnO (ZTO) with a focus on the e ect of deposition conditions on the film properties. IGZO films were deposited by radio-frequency (RF) sputtering from an oxide target while for ZTO, reactive sputtering from an alloy target was used. All films were deposited without substrate heating and characterized with respect to microstructure, electron mobility, and resistivity. The best as-deposited IGZO films exhibited a resistivity of about 2 102 Ohmcm and an electron mobility of 18 cm2V1s1. The lateral distribution of the electrical properties in such films is mainly related to the activity and amount of oxygen reaching the substrate surface as well as its spatial distribution. The lateral uniformity is strongly influenced by the composition and energy of the material flux towards the substrate

Mechanical Properties of Hydrogen Free Diamond-Like Carbon Thin Films Deposited by High Power Impulse Magnetron Sputtering with Ne

Hydrogen-free diamond-like carbon (DLC) thin films are attractive for a wide range of industrial applications. One of the challenges related to the use of hard DLC lies in the high intrinsic compressive stresses that limit the film adhesion. Here, we report on the mechanical and tribological properties of DLC films deposited by High Power Impulse Magnetron Sputtering (HiPIMS) with Ne as the process gas. In contrast to standard magnetron sputtering as well as standard Ar-based HiPIMS process, the Ne-HiPIMS lead to dense DLC films with increased mass density (up to 2.65 g/cm(3)) and a hardness of 23 GPa when deposited on steel with a Cr + CrN adhesion interlayer. Tribological testing by the pin-on-disk method revealed a friction coefficient of 0.22 against steel and a wear rate of 2 x 10(-17) m(3)/Nm. The wear rate is about an order of magnitude lower than that of the films deposited using Ar. The differences in the film properties are attributed to an enhanced C ionization in the Ne-HiPIMS discharge