Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon

A method of hybrid integration of quantum dot microdisk lasers with silicon wafer is proposed and realized. In addition to the possibility of combining microlasers with various silicon-based electronic and photonic devices, this makes it possible to significantly improve heat removal from the active region of the microlaser. The thermal resistance normalized to the mesa area reaches the level of about 0.002 (K/W)*cm2, which is significantly lower than the corresponding values of QD microlasers on GaAs substrate and monolithically grown on Si. As a result, the threshold current as well as current-induced shift of emission wavelength are reduced in continuous-wave regime

Software monitoring system of banking devices of self-service: Engineering-psychological approach to development of the system

Information technology is an innovative developing space that is not limited to territorial boundaries and is becoming increasingly global in scope. It actively provides solutions for the tasks of both the townsfolk and entire sectors of the industry, being one of the most important factors that have a strong influence on reality