4,100 research outputs found
Breakdown of step-flow growth in unstable homoepitaxy
Two mechanisms for the breakdown of step flow growth, in the sense of the
appearance of steps of opposite sign to the original vicinality, are studied by
kinetic Monte Carlo simulations and scaling arguments. The first mechanism is
the nucleation of islands on the terraces, which leads to mound formation if
interlayer transport is sufficiently inhibited. The second mechanism is the
formation of vacancy islands due to the self-crossing of strongly meandering
steps. The competing roles of the growth of the meander amplitude and the
synchronization of the meander phase are emphasized. The distance between
vacancy islands along the step direction appears to be proportional to the
square of the meander wavelengthComment: 7 pages, 9 figure
Scaling properties of step bunches induced by sublimation and related mechanisms: A unified perspective
This work provides a ground for a quantitative interpretation of experiments
on step bunching during sublimation of crystals with a pronounced
Ehrlich-Schwoebel (ES) barrier in the regime of weak desorption. A strong step
bunching instability takes place when the kinetic length is larger than the
average distance between the steps on the vicinal surface. In the opposite
limit the instability is weak and step bunching can occur only when the
magnitude of step-step repulsion is small. The central result are power law
relations of the between the width, the height, and the minimum interstep
distance of a bunch. These relations are obtained from a continuum evolution
equation for the surface profile, which is derived from the discrete step
dynamical equations for. The analysis of the continuum equation reveals the
existence of two types of stationary bunch profiles with different scaling
properties. Through a mathematical equivalence on the level of the discrete
step equations as well as on the continuum level, our results carry over to the
problems of step bunching induced by growth with a strong inverse ES effect,
and by electromigration in the attachment/detachment limited regime. Thus our
work provides support for the existence of universality classes of step
bunching instabilities [A. Pimpinelli et al., Phys. Rev. Lett. 88, 206103
(2002)], but some aspects of the universality scenario need to be revised.Comment: 21 pages, 8 figure
Kinetic Monte Carlo simulations of oscillatory shape evolution for electromigration-driven islands
The shape evolution of two-dimensional islands under electromigration-driven
periphery diffusion is studied by kinetic Monte Carlo (KMC) simulations and
continuum theory. The energetics of the KMC model is adapted to the Cu(100)
surface, and the continuum model is matched to the KMC model by a suitably
parametrized choice of the orientation-dependent step stiffness and step atom
mobility. At 700 K shape oscillations predicted by continuum theory are
quantitatively verified by the KMC simulations, while at 500 K qualitative
differences between the two modeling approaches are found.Comment: 7 pages, 6 figure
Simulation of a high-speed demultiplexer based on two-photon absorption in semiconductor devices
In this paper, we present a theoretical model of an all-optical demultiplexer based on two-photon absorption in a specially designed semiconductor micro-cavity for use in an optical time division multiplexed system. We show that it is possible to achieve error-free demultiplexing of a 250 Gbit/s OTDM signal (25 × 10 Gbit/s channels) using a control-to-signal peak pulse power ratios of around 30:1 with a device bandwidth of approximately 30 GHz
Short-time scaling behavior of growing interfaces
The short-time evolution of a growing interface is studied within the
framework of the dynamic renormalization group approach for the
Kadar-Parisi-Zhang (KPZ) equation and for an idealized continuum model of
molecular beam epitaxy (MBE). The scaling behavior of response and correlation
functions is reminiscent of the ``initial slip'' behavior found in purely
dissipative critical relaxation (model A) and critical relaxation with
conserved order parameter (model B), respectively. Unlike model A the initial
slip exponent for the KPZ equation can be expressed by the dynamical exponent
z. In 1+1 dimensions, for which z is known exactly, the analytical theory for
the KPZ equation is confirmed by a Monte-Carlo simulation of a simple ballistic
deposition model. In 2+1 dimensions z is estimated from the short-time
evolution of the correlation function.Comment: 27 pages LaTeX with epsf style, 4 figures in eps format, submitted to
Phys. Rev.
Interfaces with a single growth inhomogeneity and anchored boundaries
The dynamics of a one dimensional growth model involving attachment and
detachment of particles is studied in the presence of a localized growth
inhomogeneity along with anchored boundary conditions. At large times, the
latter enforce an equilibrium stationary regime which allows for an exact
calculation of roughening exponents. The stochastic evolution is related to a
spin Hamiltonian whose spectrum gap embodies the dynamic scaling exponent of
late stages. For vanishing gaps the interface can exhibit a slow morphological
transition followed by a change of scaling regimes which are studied
numerically. Instead, a faceting dynamics arises for gapful situations.Comment: REVTeX, 11 pages, 9 Postscript figure
An Exactly Solved Model of Three Dimensional Surface Growth in the Anisotropic KPZ Regime
We generalize the surface growth model of Gates and Westcott to arbitrary
inclination. The exact steady growth velocity is of saddle type with principal
curvatures of opposite sign. According to Wolf this implies logarithmic height
correlations, which we prove by mapping the steady state of the surface to
world lines of free fermions with chiral boundary conditions.Comment: 9 pages, REVTEX, epsf, 3 postscript figures, submitted to J. Stat.
Phys, a wrong character is corrected in eqs. (31) and (32
Driven Lattice Gases with Quenched Disorder: Exact Results and Different Macroscopic Regimes
We study the effect of quenched spatial disorder on the steady states of
driven systems of interacting particles. Two sorts of models are studied:
disordered drop-push processes and their generalizations, and the disordered
asymmetric simple exclusion process. We write down the exact steady-state
measure, and consequently a number of physical quantities explicitly, for the
drop-push dynamics in any dimensions for arbitrary disorder. We find that three
qualitatively different regimes of behaviour are possible in 1- disordered
driven systems. In the Vanishing-Current regime, the steady-state current
approaches zero in the thermodynamic limit. A system with a non-zero current
can either be in the Homogeneous regime, chracterized by a single macroscopic
density, or the Segregated-Density regime, with macroscopic regions of
different densities. We comment on certain important constraints to be taken
care of in any field theory of disordered systems.Comment: RevTex, 17pages, 18 figures included using psfig.st
Spiral Growth and Step Edge Barriers
The growth of spiral mounds containing a screw dislocation is compared to the
growth of wedding cakes by two-dimensional nucleation. Using phase field
simulations and homoepitaxial growth experiments on the Pt(111) surface we show
that both structures attain the same characteristic large scale shape when a
significant step edge barrier suppresses interlayer transport. The higher
vertical growth rate observed for the spiral mounds on Pt(111) reflects the
different incorporation mechanisms for atoms in the top region and can be
formally represented by an enhanced apparent step edge barrier.Comment: 11 pages, 4 figures, partly in colo
Sign-time distributions for interface growth
We apply the recently introduced distribution of sign-times (DST) to
non-equilibrium interface growth dynamics. We are able to treat within a
unified picture the persistence properties of a large class of relaxational and
noisy linear growth processes, and prove the existence of a non-trivial scaling
relation. A new critical dimension is found, relating to the persistence
properties of these systems. We also illustrate, by means of numerical
simulations, the different types of DST to be expected in both linear and
non-linear growth mechanisms.Comment: 4 pages, 5 ps figs, replaced misprint in authors nam
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