27 research outputs found
Modeling of interactions in amorphous and nanocrystalline alloys with induced anisotropy
No full textMagnetization processes and hysteresis modeling in soft magnetostrictive amorphous materials
No full textCharacterization of the Reader Width Using the Micro-Track Test in Perpendicular Recording
No full textData Rate Effects on Transition and Remanence Noise in a Modeled Heat-Assisted Magnetic Recording System
No full textTwo modes behavior of vortex oscillations in spin-transfer nanocontacts subject to in-plane magneticfields
No full textVortex oscillations induced by dc currents (Idc) through a metallic nanocontact subject to in-plane magnetic fields (Hext) are studied by measuring voltage power spectra. Two oscillations modes exist: at large Idc the oscillation frequency (fosc) is substantially insensitive to Hext, whereas at low Idc, fosc decreases with Hext increasing. At intermediate Idc the two modes coexist. This behavior is ascribed to the magnetic states of the device ferromagnetic layers: in the first mode vortices are formed in both layers while in the second mode one layer is in a vortex state while the other is in a quasiuniform state
Direct Detection of Nonlinear Ferromagnetic Resonance in Thin Films by the Magneto-Optical Kerr Effect
No full textTwo modes behavior of vortex oscillations in spin-transfer nanocontacts subject to in-plane magnetic fields
No full textVortex oscillations induced by dc currents (Idc) through a metallic nanocontact subject to in-plane magnetic fields (Hext) are studied by measuring voltage power spectra. Two oscillations modes exist: at large Idc the oscillation frequency (fosc) is substantially insensitive to Hext, whereas at low Idc, fosc decreases with Hext increasing. At intermediate Idc the two modes coexist. This behavior is ascribed to the magnetic states of the device ferromagnetic layers: in the first mode vortices are formed in both layers while in the second mode one layer is in a vortex state while the other is in a quasiuniform state
