Cubic Dresselhaus Spin-Orbit Coupling in 2D Electron Quantum Dots

We study effects of the oft-neglected cubic Dresselhaus spin-orbit coupling (i.e., $\propto p^3$) in GaAs/AlGaAs quantum dots. Using a semiclassical billiard model, we estimate the magnitude of the spin-orbit induced avoided crossings in a closed quantum dot in a Zeeman field. Using these results, together with previous analyses based on random matrix theory, we calculate corresponding effects on the conductance through an open quantum dot. Combining our results with an experiment on conductance through an 8 um^2 quantum dot [D M Zumbuhl et al., Phys. Rev. B 72, 081305 (2005)] suggests that 1) the GaAs Dresselhaus coupling constant, $\gamma$, is approximately 9 eVA^3, significantly less than the commonly cited value of 27.5 eVA^3 and 2) the majority of the spin-flip component of spin-orbit coupling can come from the cubic Dresselhaus term.Comment: 4 pages plus supplementary tabl

Scaling and localization lengths of a topologically disordered system

We consider a noninteracting disordered system designed to model particle diffusion, relaxation in glasses, and impurity bands of semiconductors. Disorder originates in the random spatial distribution of sites. We find strong numerical evidence that this model displays the same universal behavior as the standard Anderson model. We use finite-size-scaling to find the localization length as a function of energy and density, including localized states away from the delocalization transition. Results at many energies all fit onto the same universal scaling curve.Comment: 5+ page

Nonradiative lifetimes in intermediate band materials - absence of lifetime recovery

Intermediate band photovoltaics hold the promise of being highly efficient and cost effective photovoltaic cells. Intermediate states in the band gap, however, are known to facilitate nonradiative recombination. Much effort has been dedicated to producing metallic intermediate bands in hopes of producing lifetime recovery -- an increase in carrier lifetime as doping levels increase. We show that lifetime recovery induced by the insulator-to-metal transition will not occur, because the metallic extended states will be localised by phonons during the recombination process. Only trivial forms of lifetime recovery, e.g., from an overall shift in intermediate levels, are possible. Future work in intermediate band photovoltaics must focus on optimizing subgap optical absorption and minimizing recombination, but not via lifetime recovery.Comment: 8 page