On a factorization of second order elliptic operators and applications

We show that given a nonvanishing particular solution of the equation (divpgrad+q)u=0 (1) the corresponding differential operator can be factorized into a product of two first order operators. The factorization allows us to reduce the equation (1) to a first order equation which in a two-dimensional case is the Vekua equation of a special form. Under quite general conditions on the coefficients p and q we obtain an algorithm which allows us to construct in explicit form the positive formal powers (solutions of the Vekua equation generalizing the usual powers of the variable z). This result means that under quite general conditions one can construct an infinite system of exact solutions of (1) explicitly, and moreover, at least when p and q are real valued this system will be complete in ker(divpgrad+q) in the sense that any solution of (1) in a simply connected domain can be represented as an infinite series of obtained exact solutions which converges uniformly on any compact subset of . Finally we give a similar factorization of the operator (divpgrad+q) in a multidimensional case and obtain a natural generalization of the Vekua equation which is related to second order operators in a similar way as its two-dimensional prototype does

Quaternionic factorization of the Schroedinger operator and its applications to some first order systems of mathematical physics

We consider the following first order systems of mathematical physics. 1.The Dirac equation with scalar potential. 2.The Dirac equation with electric potential. 3.The Dirac equation with pseudoscalar potential. 4.The system describing non-linear force free magnetic fields or Beltrami fields with nonconstant proportionality factor. 5.The Maxwell equations for slowly changing media. 6.The static Maxwell system. We show that all this variety of first order systems reduces to a single quaternionic equation the analysis of which in its turn reduces to the solution of a Schroedinger equation with biquaternionic potential. In some important situations the biquaternionic potential can be diagonalized and converted into scalar potentials

Formation of three-particle clusters in hetero-junctions and MOSFET structures

A novel interaction mechanism in MOSFET structures and $GaAs/AlGaAs$ hetero-junctions between the zone electrons of the two-dimensional (2D) gas and the charged traps on the insulator side is considered. By applying a canonical transformation, off-diagonal terms in the Hamiltonian due to the trapped level subsystem are excluded. This yields an effective three-particle attractive interaction as well as a pairing interaction inside the 2D electronic band. A type of Bethe- Goldstone equation for three particles is studied to clarify the character of the binding and the energy of the three-particle bound states. The results are used to offer a possible explanation of the Metal-Insulator transition recently observed in MOSFET and hetero-junctions.Comment: 4 page

Quaternion Analysis for Generalized Electromagnetic Fields of Dyons in Isotropic Medium

Quaternion analysis of time dependent Maxwell's equations in presence of electric and magnetic charges has been developed and the solutions for the classical problem of moving charges (electric and magnetic) are obtained in unique, simple and consistent manner

Magnetoresistance of a two-dimensional electron gas in a parallel magnetic field

The conductivity of a two-dimensional electron gas in a parallel magnetic field is calculated. We take into account the magnetic field induced spin-splitting, which changes the density of states, the Fermi momentum and the screening behavior of the electron gas. For impurity scattering we predict a positive magnetoresistance for low electron density and a negative magnetoresistance for high electron density. The theory is in qualitative agreement with recent experimental results found for Si inversion layers and Si quantum wells.Comment: 4 pages, figures included, PDF onl

Thermodynamic Signature of a Two-Dimensional Metal-Insulator Transition

We present a study of the compressibility, K, of a two-dimensional hole system which exhibits a metal-insulator phase transition at zero magnetic field. It has been observed that dK/dp changes sign at the critical density for the metal-insulator transition. Measurements also indicate that the insulating phase is incompressible for all values of B. Finally, we show how the phase transition evolves as the magnetic field is varied and construct a phase diagram in the density-magnetic field plane for this system.Comment: 4 pages, 4 figures, submitted to Physical Review Letters; version 1 is identical to version 2 but didn't compile properl

Hall Coefficient of a Dilute 2D Electron System in Parallel Magnetic Field

Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field above which the longitudinal resistance saturates and the electrons have reached full spin-polarization. This implies that the mobilities of the spin-up and spin-down electrons remain comparable at all magnetic fields, and suggests there is strong mixing of spin-up and spin-down electron states.Comment: 4 pages, 2 figure