Optically Active Si:Er Layers Grown by the Sublimation MBE Method

We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10$\text{}^{18}$ cm$\text{}^{-3}$. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$ at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K

Plasmon-induced Purcell effect in InN/In metal-semiconductor nanocomposites

The Purcell effect, acceleration of a spontaneous emission recombination rate, has been observed in InN/In nanocomposites with buried nanoparticles of metallic In. This effect, associated with localized plasmons, is characterized by the averaged Purcell factor as high as 30-40 in the structures with large enough particles. This high value is indicative of a noticeable contribution from the emitting dipoles polarized normally to the nanoparticle surface in this system. The experimental observation of shortening of the emission lifetimes with increasing the amount of In is supported by calculations performed in a semiclassical approximation