Spin Transfer of Quantum Information between Majorana Modes and a Resonator

We show that resonant coupling and entanglement between a mechanical resonator and majorana bound states can be achieved via spin currents in a 1D quantum wire with strong spin-orbit interactions. The bound states induced by vibrating and stationary magnets can hybridize thus resulting in spin-current induced $4\pi$-periodic torque, as a function of the relative field angle, acting on the resonator. We study the feasibility of detecting and manipulating majorana bound states with the use of magnetic resonance force microscopy techniques.Comment: 4 pages and supplementary material; 4 figure

Interfacial contributions to spin-orbit torque and magnetoresistance in ferromagnet/heavy-metal bilayers

The thickness dependence of spin-orbit torque and magnetoresistance in ferromagnet/heavy-metal bilayers is studied using the first-principles nonequilibrium Green’s function formalism combined with the Anderson disorder model. A systematic expansion in orthogonal vector spherical harmonics is used for the angular dependence of the torque. The dampinglike torque in Co/Pt and Co/Au bilayers can be described as a sum of the spin-Hall contribution, which increases with thickness in agreement with the spin-diffusion model, and a comparable interfacial contribution. The magnetoconductance in the plane perpendicular to the current in Co/Pt bilayers is of the order of a conductance quantum per interfacial atom, exceeding the prediction of the spin-Hall model by more than an order of magnitude. This suggests that the “spin-Hall magnetoresistance,” similarly to the dampinglike torque, has a large interfacial contribution unrelated to the spin-Hall effect

Interfacial contributions to spin-orbit torque and magnetoresistance in ferromagnet/heavy-metal bilayers

The thickness dependence of spin-orbit torque and magnetoresistance in ferromagnet/heavy-metal bilayers is studied using the first-principles nonequilibrium Green’s function formalism combined with the Anderson disorder model. A systematic expansion in orthogonal vector spherical harmonics is used for the angular dependence of the torque. The dampinglike torque in Co/Pt and Co/Au bilayers can be described as a sum of the spin-Hall contribution, which increases with thickness in agreement with the spin-diffusion model, and a comparable interfacial contribution. The magnetoconductance in the plane perpendicular to the current in Co/Pt bilayers is of the order of a conductance quantum per interfacial atom, exceeding the prediction of the spin-Hall model by more than an order of magnitude. This suggests that the “spin-Hall magnetoresistance,” similarly to the dampinglike torque, has a large interfacial contribution unrelated to the spin-Hall effect

Opacity, variability and kinematics of AGN jets

Synchrotron self-absorption in active galactic nuclei (AGN) jets manifests itself as a time delay between flares observed at high and low radio frequencies. It is also responsible for the observing frequency dependent change in size and position of the apparent base of the jet, aka the core shift effect, detected with very long baseline interferometry (VLBI). We measure the time delays and the core shifts in 11 radio-loud AGN to estimate the speed of their jets without relying on multi-epoch VLBI kinematics analysis. The 15$-$8 GHz total flux density time lags are obtained using Gaussian process regression, the core shift values are measured using VLBI observations and adopted from the literature. A strong correlation is found between the apparent core shift and the observed time delay. Our estimate of the jet speed is higher than the apparent speed of the fastest VLBI components by the median coefficient of 1.4. The coefficient ranges for individual sources from 0.5 to 20. We derive Doppler factors, Lorentz factors and viewing angles of the jets, as well as the corresponding de-projected distance from the jet base to the core. The results support evidence for acceleration of the jets with bulk motion Lorentz factor $\Gamma\propto R^{0.52\pm0.03}$ on de-projected scales $R$ of 0.5$-$500 parsecs.Comment: Accepted by MNRAS; 11 pages, 11 figures, 3 table

Theory of Spin Loss at Metallic Interfaces

Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at metallic interfaces is usually quantified by matching the magnetoresistance data for multilayers to the Valet-Fert model, while treating each interface as a fictitious bulk layer whose thickness is δ times the spin-diffusion length. By employing the properly generalized circuit theory and the scattering matrix approaches, we derive the relation of the parameter δ to the spin-flip transmission and reflection probabilities at an individual interface. It is found that δ is proportional to the square root of the probability of spin-flip scattering. We calculate the spin-flip scattering probabilities for flat and rough Cu/Pd interfaces using the Landauer-Büttiker method based on the first-principles electronic structure and find δ to be in reasonable agreement with experiment

Demonstrating Entanglement by Testing Bell's Theorem in Majorana Wires

We propose an experiment that would establish the entanglement of Majorana zero modes in semiconductor nanowires by testing the Bell and Clauser-Horne-Shimony-Holt inequalities. Our proposal is viable with realistic system parameters, simple "keyboard" gating, and projective measurement. Simulation results indicate entanglement can be demonstrated with moderately accurate gate operations. In addition to providing further evidence for the existence of the Majorana bound states, our proposal could be used as an experimental stepping stone to more complicated braiding experiments.Comment: 11 pages, 8 figures, 2 table

MAGNETOELECTRIC MEMORY CELLS WITH DOMAIN-WALL-MEDIATED SWITCHING

A magnetoelectric memory cell with domain - wall - mediated switching is implemented using a split gate architecture . The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic ( MEAF ) active layer . An extension of this architecture applies to multiple gate linear arrays that can offer advantages in memory density , programmability , and logic functionality . Applying a small anisotropic in - plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switchin

Theory of Spin Loss at Metallic Interfaces

Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at metallic interfaces is usually quantified by matching the magnetoresistance data for multilayers to the Valet-Fert model, while treating each interface as a fictitious bulk layer whose thickness is δ times the spin-diffusion length. By employing the properly generalized circuit theory and the scattering matrix approaches, we derive the relation of the parameter δ to the spin-flip transmission and reflection probabilities at an individual interface. It is found that δ is proportional to the square root of the probability of spin-flip scattering. We calculate the spin-flip scattering probabilities for flat and rough Cu/Pd interfaces using the Landauer-Büttiker method based on the first-principles electronic structure and find δ to be in reasonable agreement with experiment

Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E = 0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. A split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality

Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E = 0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. A split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality