Внедрение газокомпрессорной станции в систему утилизации попутного нефтяного газа

В процессе работы был рассмотрен максимально эффективный метод утилизации попутного нефтяного газа для данного месторождения, который позволяет утилизировать 95% попутного нефтяного газа.In the course of the work, the most efficient method of utilization of associated petroleum gas for this field was considered, which allows utilizing 95% of associated petroleum gas

Прогнозирование гидравлического разрыва пласта низкопроницаемых коллекторов на основе математического моделирования на месторождении Х

Объектом исследования является месторождение нефти с низкой проницаемостью, на котором был проведен гидроразрыв пласта с целью увеличения добычи нефти. Цель работы – разработать имитационную модель гидроразрыва с использованием вариационного подхода к гидроразрыву в качестве механической модели, что позволяет использовать единую расчетную область для представления как трещины, так и коллектора, и устраняет необходимость явной идентификации трещины. и направления распространения. В процессе исследования была рассмотрена группа сложных математических моделей деформации.The object of the study is an oil field with low permeability, where hydraulic fracturing was carried out in order to increase oil production. The aim of the work is to develop a simulation model of hydraulic fracturing using a variational approach to hydraulic fracturing as a mechanical model, which allows using a single computational domain to represent both the fracture and the reservoir, and eliminates the need for explicit fracture identification. and directions of distribution. In the course of the study, a group of complex mathematical models of deformation and fluid flow was considered

Raman investigation of stress and phase transformation induced in silicon by indentation at high temperatures

To study the material deterioration at and around the support contacts during processing of silicon wafers, we used Rockwell indentation at elevated temperatures as a model. Cz-silicon was subjected for 30 s to a load of 1.5 N, at temperatures between 70 °C and 660 °C. The resulting morphology was checked by Scanning Electron Microscopy. Micro Raman Spectroscopy was used to monitor residual stress and the occurrence of silicon polymorphs. We found strong compressive stress inside the indented area, with a dramatic drop and reversal to tensile stress at its boundary. The morphology shows a top hat profile, covered with a mesh of vein-like structures. Crystalline phases such as Si-III, Si-IV, Si-XII, and amorphous silicon are observed. Outside the spot, the situation depends strongly on the indentation temperature. Up to 400 °C the material appears practically unstressed, with a high density of relaxation cracks. At 500 °C and 600 °C a transition is found from strong tensile stress at the boundary to another region of compressive stress extending over more than 40 μm, associated with a significantly lower crack density. At still higher temperature (660 °C) the crack density tends to zero, and comparably weak stress seams to oscillate between compressive and tensile

Pulsed laser deposition of HfO 2 and Pr x O y high-k films on Si(100)

Abstract Pulsed laser deposition was used to grow thin films of the high-k materials praseodymium oxide (Pr x O y ) and hafnium oxide (HfO 2 ) on Si(100) due to its experimental simplicity and flexibility. Most important factors for technical application, such as film morphology and interface quality, were investigated by optical microscopy, atomic force microscopy and Raman spectroscopy. During the growth process typical splashes, originating from the laser-target interaction, are embedded into the growing layer. The size of these splashes appears to depend strongly on the laser wavelength (355, 532, 1064 nm). The microscopic morphology of layers of both materials shows a dependence on substrate temperature, which is much more pronounced in case of HfO 2 . Raman spectra of the films show relatively sharp phonon peaks, a single one for Pr x O y and a rich spectrum for HfO 2 , clearly evidencing crystalline areas. This is corroborated by substrate Raman spectra which indicate a stressed interface, pointing to epitaxial Pr x O y and HfO 2 film growth, respectively, during the initial stages of growth.

Stress and phase purity analyses of diamond films deposited through laser-assisted combustion synthesis

Diamond films were deposited on silicon and tungsten carbide substrates in open air through laser-assisted combustion synthesis. Laser-induced resonant excitation of ethylene molecules was achieved in the combustion process to promote diamond growth rate. In addition to microstructure study by scanning electron microscopy, Raman spectroscopy was used to analyze the phase purity and residual stress of the diamond films. High-purity diamond films were obtained through laser-assisted combustion synthesis. The levels of residual stress were in agreement with corresponding thermal expansion coefficients of diamond, silicon, and tungsten carbide. Diamond-film purity increases while residual stress decreases with an increasing film thickness. Diamond films deposited on silicon substrates exhibit higher purity and lower residual stress than those deposited on tungsten carbide substrates