72 research outputs found
Topological Insulators-Based Magnetic Heterostructure
The combination of magnetism and topology in magnetic topological insulators
(MTIs) has led to unprecedented advancements of time reversal symmetry-breaking
topological quantum physics in the past decade. Compared with the uniform
films, the MTI heterostructures provide a better framework to manipulate the
spin-orbit coupling and spin properties. In this review, we summarize the
fundamental mechanisms related to the physical orders host in
(Bi,Sb)2(Te,Se)3-based hybrid systems. Besides, we provide an assessment on the
general strategies to enhance the magnetic coupling and spin-orbit torque
strength through different structural engineering approaches and effective
interfacial interactions. Finally, we offer an outlook of MTI
heterostructures-based spintronics applications, particularly in view of their
feasibility to achieve room-temperature operation.Comment: 33 pages, 11 figure
Cryogenic quasi-static embedded DRAM for energy-efficient compute-in-memory applications
Compute-in-memory (CIM) presents an attractive approach for energy-efficient
computing in data-intensive applications. However, the development of suitable
memory designs to achieve high-performance CIM remains a challenging task.
Here, we propose a cryogenic quasi-static embedded DRAM to address the
logic-memory mismatch of CIM. Guided by the re-calibrated cryogenic device
model, the designed four-transistor bit-cell achieves full-swing data storage,
low power consumption, and extended retention time at cryogenic temperatures.
Combined with the adoption of cryogenic write bitline biasing technique and
readout circuitry optimization, our 4Kb cryogenic eDRAM chip demonstrates a
1.3710 times improvement in retention time, while achieving a 75
times improvement in retention variability, compared to room-temperature
operation. Moreover, it also achieves outstanding power performance with a
retention power of 112 fW and a dynamic power of 108 W at 4.2 K, which can
be further decreased by 7.1% and 13.6% using the dynamic voltage scaling
technique. This work reveals the great potential of cryogenic CMOS for
high-density data storage and lays a solid foundation for energy-efficient CIM
implementations
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