55 research outputs found

    Phase ordering and roughening on growing films

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    We study the interplay between surface roughening and phase separation during the growth of binary films. Already in 1+1 dimension, we find a variety of different scaling behaviors depending on how the two phenomena are coupled. In the most interesting case, related to the advection of a passive scalar in a velocity field, nontrivial scaling exponents are obtained in simulations.Comment: 4 pages latex, 6 figure

    Roughening of the (1+1) interfaces in two-component surface growth with an admixture of random deposition

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    We simulate competitive two-component growth on a one dimensional substrate of LL sites. One component is a Poisson-type deposition that generates Kardar-Parisi-Zhang (KPZ) correlations. The other is random deposition (RD). We derive the universal scaling function of the interface width for this model and show that the RD admixture acts as a dilatation mechanism to the fundamental time and height scales, but leaves the KPZ correlations intact. This observation is generalized to other growth models. It is shown that the flat-substrate initial condition is responsible for the existence of an early non-scaling phase in the interface evolution. The length of this initial phase is a non-universal parameter, but its presence is universal. In application to parallel and distributed computations, the important consequence of the derived scaling is the existence of the upper bound for the desynchronization in a conservative update algorithm for parallel discrete-event simulations. It is shown that such algorithms are generally scalable in a ring communication topology.Comment: 16 pages, 16 figures, 77 reference

    How the geometry makes the criticality in two - component spreading phenomena?

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    We study numerically a two-component A-B spreading model (SMK model) for concave and convex radial growth of 2d-geometries. The seed is chosen to be an occupied circle line, and growth spreads inside the circle (concave geometry) or outside the circle (convex geometry). On the basis of generalised diffusion-annihilation equation for domain evolution, we derive the mean field relations describing quite well the results of numerical investigations. We conclude that the intrinsic universality of the SMK does not depend on the geometry and the dependence of criticality versus the curvature observed in numerical experiments is only an apparent effect. We discuss the dependence of the apparent critical exponent χa\chi_{a} upon the spreading geometry and initial conditions.Comment: Uses iopart.cls, 11 pages with 8 postscript figures embedde

    Soft versus Hard Dynamics for Field-driven Solid-on-Solid Interfaces

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    Analytical arguments and dynamic Monte Carlo simulations show that the microstructure of field-driven Solid-on-Solid interfaces depends strongly on the dynamics. For nonconservative dynamics with transition rates that factorize into parts dependent only on the changes in interaction energy and field energy, respectively (soft dynamics), the intrinsic interface width is field-independent. For non-factorizing rates, such as the standard Glauber and Metropolis algorithms (hard dynamics), it increases with the field. Consequences for the interface velocity and its anisotropy are discussed.Comment: 9 pages LaTex with imbedded .eps figs. Minor revision

    Study of the island morphology at the early stages of Fe/Mo(110) MBE growth

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    We present theoretical study of morphology of Fe islands grown at Mo(110) surface in sub-monolayer MBE mode. We utilize atomistic SOS model with bond counting, and interactions of Fe adatom up to third nearest neighbors. We performed KMC simulations for different values of adatom interactions and varying temperatures. We have found that, while for the low temperature islands are fat fractals, for the temperature 500K islands have faceted rhombic-like shape. For the higher temperature, islands acquire a rounded shape. In order to evaluated qualitatively morphological changes, we measured averaged aspect ration of islands. We calculated dependence of the average aspect ratio on the temperature, and on the strength of interactions of an adatom with neighbors.Comment: 6 pages, 6 figures. Proceedings of 11-th Symposium on Surface Physics, Prague 200

    Atomic step motion during the dewetting of ultra-thin films

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    We report on three key processes involving atomic step motion during the dewetting of thin solid films: (i) the growth of an isolated island nucleated far from a hole, (ii) the spreading of a monolayer rim, and (iii) the zipping of a monolayer island along a straight dewetting front. Kinetic Monte Carlo results are in good agreement with simple analytical models assuming diffusion-limited dynamics.Comment: 7 pages, 5 figure

    Continuous and correlated nucleation during nonstandard island growth at Ag/Si(111)-7x7 heteroepitaxy

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    We present a combined experimental and theoretical study of submonolayer heteroepitaxial growth of Ag on Si(111)-7x7 at temperatures from 420 K to 550 K when Ag atoms can easily diffuse on the surface and the reconstruction 7x7 remains stable. STM measurements for coverages from 0.05 ML to 0.6 ML show that there is an excess of smallest islands (each of them fills up just one half-unit cell - HUC) in all stages of growth. Formation of 2D wetting layer proceeds by continuous nucleation of the smallest islands in the proximity of larger 2D islands (extended over several HUCs) and following coalescence with them. Such a growth scenario is verified by kinetic Monte Carlo simulation which uses a coarse-grained model based on a limited capacity of HUC and a mechanism which increases nucleation probability in a neighbourhood of already saturated HUCs (correlated nucleation). The model provides a good fit for experimental dependences of the relative number of Ag-occupied HUCs and the preference in occupation of faulted HUCs on temperature and amount of deposited Ag. Parameters obtained for the hopping of Ag adatoms between HUCs agree with those reported earlier for initial stages of growth. The model provides two new parameters - maximum number of Ag atoms inside HUC, and on HUC boundary.Comment: LaTeX2e, BibTeX, 9 pages, 7 images, accepted to Phys. Rev.

    Reconstructed Rough Growing Interfaces; Ridgeline Trapping of Domain Walls

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    We investigate whether surface reconstruction order exists in stationary growing states, at all length scales or only below a crossover length, lrecl_{\rm rec}. The later would be similar to surface roughness in growing crystal surfaces; below the equilibrium roughening temperature they evolve in a layer-by-layer mode within a crossover length scale lRl_{\rm R}, but are always rough at large length scales. We investigate this issue in the context of KPZ type dynamics and a checker board type reconstruction, using the restricted solid-on-solid model with negative mono-atomic step energies. This is a topology where surface reconstruction order is compatible with surface roughness and where a so-called reconstructed rough phase exists in equilibrium. We find that during growth, reconstruction order is absent in the thermodynamic limit, but exists below a crossover length lrec>lRl_{\rm rec}>l_{\rm R}, and that this local order fluctuates critically. Domain walls become trapped at the ridge lines of the rough surface, and thus the reconstruction order fluctuations are slaved to the KPZ dynamics

    Crossover effects in a discrete deposition model with Kardar-Parisi-Zhang scaling

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    We simulated a growth model in 1+1 dimensions in which particles are aggregated according to the rules of ballistic deposition with probability p or according to the rules of random deposition with surface relaxation (Family model) with probability 1-p. For any p>0, this system is in the Kardar-Parisi-Zhang (KPZ) universality class, but it presents a slow crossover from the Edwards-Wilkinson class (EW) for small p. From the scaling of the growth velocity, the parameter p is connected to the coefficient of the nonlinear term of the KPZ equation, lambda, giving lambda ~ p^gamma, with gamma = 2.1 +- 0.2. Our numerical results confirm the interface width scaling in the growth regime as W ~ lambda^beta t^beta, and the scaling of the saturation time as tau ~ lambda^(-1) L^z, with the expected exponents beta =1/3 and z=3/2 and strong corrections to scaling for small lambda. This picture is consistent with a crossover time from EW to KPZ growth in the form t_c ~ lambda^(-4) ~ p^(-8), in agreement with scaling theories and renormalization group analysis. Some consequences of the slow crossover in this problem are discussed and may help investigations of more complex models.Comment: 16 pages, 7 figures; to appear in Phys. Rev.
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