Mechanical properties of polycrystalline graphene based on a realistic atomistic model

Graphene can at present be grown at large quantities only by the chemical vapor deposition method, which produces polycrystalline samples. Here, we describe a method for constructing realistic polycrystalline graphene samples for atomistic simulations, and apply it for studying their mechanical properties. We show that cracks initiate at points where grain boundaries meet and then propagate through grains predominantly in zigzag or armchair directions, in agreement with recent experimental work. Contrary to earlier theoretical predictions, we observe normally distributed intrinsic strength (~ 50% of that of the mono-crystalline graphene) and failure strain which do not depend on the misorientation angles between the grains. Extrapolating for grain sizes above 15 nm results in a failure strain of ~ 0.09 and a Young's modulus of ~ 600 GPa. The decreased strength can be adequately explained with a conventional continuum model when the grain boundary meeting points are identified as Griffith cracks.Comment: Accepted for Physical Review B; 5 pages, 4 figure

From Point Defects in Graphene to Two-Dimensional Amorphous Carbon

While crystalline two-dimensional materials have become an experimental reality during the past few years, an amorphous 2-D material has not been reported before. Here, using electron irradiation we create an sp2-hybridized one-atom-thick flat carbon membrane with a random arrangement of polygons, including four-membered carbon rings. We show how the transformation occurs step-by-step by nucleation and growth of low-energy multi-vacancy structures constructed of rotated hexagons and other polygons. Our observations, along with first-principles calculations, provide new insights to the bonding behavior of carbon and dynamics of defects in graphene. The created domains possess a band gap, which may open new possibilities for engineering graphene-based electronic devices.Comment: 10 pages, 10 figures including supplementary informatio

Substitutional Si impurities in monolayer hexagonal boron nitride

We report the first observation of substitutional silicon atoms in single-layer hexagonal boron nitride (h-BN) using aberration corrected scanning transmission electron microscopy (STEM). The medium angle annular dark field (MAADF) images reveal silicon atoms exclusively filling boron vacancies. This structure is stable enough under electron beam for repeated imaging. Density functional theory (DFT) is used to study the energetics, structure and properties of the experimentally observed structure. The formation energies of all possible charge states of the different silicon substitutions (Si$_\mathrm{B}$, Si$_\mathrm{N}$ and Si$_\mathrm{{BN}}$) are calculated. The results reveal Si$_\mathrm{B}^{+1}$ as the most stable substitutional configuration. In this case, silicon atom elevates by 0.66{\AA} out of the lattice with unoccupied defect levels in the electronic band gap above the Fermi level. The formation energy shows a slightly exothermic process. Our results unequivocally show that heteroatoms can be incorporated into the h-BN lattice opening way for applications ranging from single-atom catalysis to atomically precise magnetic structures