Hydrogen effusion from tritiated amorphous silicon

Results for the effusion and outgassing of tritium from tritiated hydrogenated amorphous silicon (a-Si:H:T) films are presented. The samples were grown by dc-saddle field glow discharge at various substrate temperatures between 150 and 300 °C. The tracer property of radioactive tritium is used to detect tritium release. Tritium effusion measurements are performed in a nonvacuum ion chamber and are found to yield similar results as reported for standard high vacuum technique. The results suggest for decreasing substrate temperature the growth of material with an increasing concentration of voids. These data are corroborated by analysis of infrared absorption data in terms of microstructure parameters. For material of low substrate temperature (and high void concentration) tritium outgassing in air at room temperature was studied, and it was found that after 600 h about 0.2% of the total hydrogen (hydrogen+tritium) content is released. Two rate limiting processes are identified. The first process, fast tritium outgassing with a time constant of 15 h, seems to be related to surface desorption of tritiated water (HTO) with a free energy of desorption of 1.04 eV. The second process, slow tritium outgassing with a time constant of 200-300 h, appears to be limited by oxygen diffusivity in a growing oxide layer. This material of lowest H stability would lose half of the hydrogen after 60 years. © 2008 American Institute of Physics

Self-irradiation enhanced tritium solubility in hydrogenated amorphous and crystalline silicon

Experimental results on tritium effusion, along with the tritium depth profiles, from hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) tritiated in tritium (T2) gas at various temperatures and pressures are presented. The results indicate that tritium incorporation is a function of the material microstructure of the as-grown films, rather than the tritium exposure condition. The highest tritium concentration obtained is for a-Si:H deposited at a substrate temperature of 200°C. The tritium content is about 20 at. % on average with a penetration depth of about 50 nm. In contrast, tritium occluded in the c-Si is about 4 at. % with penetration depth of about 10 nm. The tritium concentration observed in a-Si:H and c-Si is much higher than the reported results for the post-hydrogenation process. β irradiation appears to catalyze the tritiation process and enhance tritium dissolution in the silicon matrix. The combination of tritium decay and β-induced ionizations results in formation of reactive species of tritium (tritium atoms, radicals, and ions) that readily adsorb on silicon. The electron bombardment of the silicon surface and subsurface renders it chemically active thereby promoting surface adsorption and subsurface diffusion of tritium, thus leading to tritium occlusion in the silicon matrix. Gaussian deconvolution of tritium effusion spectra yields two peaks for a-Si:H films tritiated at high temperature (250°C), one low temperature (LT) peak which is attributed to tritiated clusters and higher order tritides, and another high temperature peak which is attributed to monotritides. Activation energy of 2.6-4.0 eV for the LT peak was found. © 2011 American Institute of Physics

Tritium locked in silica using 248 nm KrF laser irradiation

In this Letter we report on selectively occluding tritium in a silica film on a silicon substrate using a combination of high-pressure tritium loading and 248 nm KrF laser irradiation. Sixty percent of tritium dissolved in the silica film was bonded by laser irradiation. The concentration of the bonded tritium was proportional to the total laser fluence. Tritium effusion experiments indicated that the laser-locked tritium existed stably in the glass matrix up to 400 °C. In this work we point a way to a safe and simple approach for the integration of on-chip radioisotope micropower sources for micromechanical and microelectronic applications. © 2006 American Institute of Physics

Analysis of reinforced concrete plates subjected to impact employing the truss-like discrete element method

The prediction of the response of reinforced concrete structures subjected to projectiles impact still presents open questions. These include the rate dependence of material properties, the interaction between concrete and steel reinforcement and the simulation of fracture and fragmentation. Because the appearance of discontinuities in the target structure is difficult to account using a continuum approach, the application of discrete models was developed as an appealing alternative. A version of the discrete model in which nodal masses are linked by an array of uniaxial elements, herein called discrete element method, is used in this study. This method was implemented in the system Abaqus to take advantage of its numerical and post-processing capabilities. A reinforced concrete rectangular plate subjected to impact of a projectile is examined in detail. Comparisons between experimental and numerical results are shown with the aim of validating the proposed method

High-pressure and high-temperature tritium apparatus for the tritiation of materials

A tritium exposure apparatus has been designed and built for the purposes of generating a high-pressure tritium atmosphere at 523 K. The loading system consists of a uranium tritide storage bed, an intermediate tritium transfer chamber filled with 5A molecular sieve, and the sample exposure chamber. The loading system resides in a sealed glovebox with a nitrogen atmosphere that is continually purged through a Glovebox Clean-up System. The tritium used in each loading experiment is approximately 6000 Ci (22 TBq). The process entails transferring the tritium inventory from the uranium storage bed to the cryogenically cooled (77 K) molecular sieve chamber. The molecular sieve at liquid nitrogen temperature is capable of adsorbing tritium to densities of 290 Ci/gram at one atmosphere. At 523 K a maximum tritium pressure of 21 MPa is achieved. The loading apparatus is used to develop high-density radioactive isotope fuel for self-powered microelectronic and micromechanical devices. This paper presents the design specifics of the tritium exposure apparatus, the steps taken in generating the high-temperature, high-pressure tritium atmosphere and the performance characteristics of the apparatus. Additionally, the handling practices and equipment utilized to conduct the tests safely are presented