A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction

Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrates. Three n-type layers are grown with a single liquid phase epitaxial (LPE) growth process, and the p-n junction is formed by a lateral Zn diffusion. The active layer inside the groove provides a real index waveguide. Threshold currents as low as 14 mA with 300 μm cavity length are obtained. A single longitudinal mode at 1.3 μm up to1.4 I_{TH}is observed. The lasers operate with a single lateral mode when the active region width is less than 2.5 μm. This laser is suitable for monolithic integration with other optoelectronic devices

Mode stabilized terrace InGaAsP lasers on semi-insulating InP

Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The fabrication involves a selective, single-step liquid phase epitaxial growth process, and a lateral Zn diffusion. Two versions of the terrace lasers are fabricated, and threshold currents as low as 35 mA and 50 mA respectively are obtained. The lasers operate with a stable single lateral mode. High power performance is observed. These lasers are suitable for monolithic integration with other optoelectronic devices

Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration

Low threshold InGaAsP/InP injection lasers on semi-insulating InP substrates have been developed with mirrors fabricated by the microcleavage technique. Miniature suspended bridges containing the laser channels have been formed and then microcleavage has been accomplished by the use of ultrasonic vibrations. Lasers with current thresholds as low as 18 mA with 140-µm cavity length and with 35–45% differential quantum efficiency have been obtained

Proximity induced superconductivity by Bi in topological Bi2Te2SeBi_2Te_2Se and Bi2Se3Bi_2Se_3 films: Evidence for a robust zero energy bound state possibly due to Majorana Fermions

Point contact conductance measurements on topological $Bi_2Te_2Se$ and $Bi_2Se_3$ films reveal a signature of superconductivity below 2-3 K. In particular, critical current dips and a robust zero bias conductance peak are observed. The latter suggests the presence of zero energy bound states which could be assigned to Majorana Fermions in an unconventional topological superconductor. We attribute these novel observations to proximity induced local superconductivity in the films by small amounts of superconducting Bi inclusions or segregation to the surface, and provide supportive evidence for these effects.Comment: Accepted for publication in Physical Review B (Dec. 20, 2011), 15 figures. Version V1: arXiv:1111.3445v1 [cond-mat.supr-con] 15 Nov 201

Conformative Filtering for Implicit Feedback Data

Implicit feedback is the simplest form of user feedback that can be used for item recommendation. It is easy to collect and is domain independent. However, there is a lack of negative examples. Previous work tackles this problem by assuming that users are not interested or not as much interested in the unconsumed items. Those assumptions are often severely violated since non-consumption can be due to factors like unawareness or lack of resources. Therefore, non-consumption by a user does not always mean disinterest or irrelevance. In this paper, we propose a novel method called Conformative Filtering (CoF) to address the issue. The motivating observation is that if there is a large group of users who share the same taste and none of them have consumed an item before, then it is likely that the item is not of interest to the group. We perform multidimensional clustering on implicit feedback data using hierarchical latent tree analysis (HLTA) to identify user `tastes' groups and make recommendations for a user based on her memberships in the groups and on the past behavior of the groups. Experiments on two real-world datasets from different domains show that CoF has superior performance compared to several common baselines

Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP

Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300-µm cavity length are obtained. MIS depletion mode FET's with n channels on LPE grown InP layer show typical transconductance of 5–10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current

Direct measurement of the carrier leakage in an InGaAsP/InP laser

Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions

Low threshold InGaAsP terrace mass transport laser on semi-insulating substrate

Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated using the mass transport technique. The fabrication process involves a single-step liquid phase epitaxial (LPE) growth followed by a mass transport of InP at ~675 °C in the presence of an InP cover wafer. Lasers operating in the fundamental transverse mode with smooth far-field patterns and threshold currents as low as 9.5 mA have been obtained

Very low threshold InGaAsP mesa laser

Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 μm) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described