4,785 research outputs found
Interface effects in d-wave superconductor-ferromagnet junctions
Measurements of the differential conductance spectra of YBa2Cu3O7-SrRuO3 and
YBa2Cu3O7-La0.67Ca_0.33MnO3 ramp-type junctions along the node and anti-node
directions are reported. The results are consistent with a crossed Andreev
reflection effect only in YBa2Cu3O7-SrRuO3 junctions where the domain wall
width of SrRuO3 is comparable with the coherence length of YBa2Cu3O7. No such
effect was observed in the YBa2Cu3O7-La0.67Ca0.33MnO3 junctions, which is in
line with the much larger (x10) domain wall width of La0.67Ca0.33MnO3. We also
show that crossed Andreev exists only in the anti-node direction. Furthermore,
we find evidence that crossed Andreev in YBa2Cu3O7 junctions is not sensitive
to nm-scale interface defects, suggesting that the length scale of the crossed
Andreev effect is larger than the coherence length, but still smaller than the
La0.67Ca0.33MnO3's domain wall width.Comment: 5 pages, 6 figure
A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrates. Three n-type layers are grown with a single liquid phase epitaxial (LPE) growth process, and the p-n junction is formed by a lateral Zn diffusion. The active layer inside the groove provides a real index waveguide. Threshold currents as low as 14 mA with 300 ÎĽm cavity length are obtained. A single longitudinal mode at 1.3 ÎĽm up to1.4 I_{TH}is observed. The lasers operate with a single lateral mode when the active region width is less than 2.5 ÎĽm. This laser is suitable for monolithic integration with other optoelectronic devices
Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of - -
Transport and Conductance spectra measurements of ramp-type junctions made of
cuprate superconducting electrodes and a manganite
ferromagnetic barrier are reported. At low
temperatures below , the conductance spectra show Andreev-like broad peaks
superposed on a tunneling-like background, and sometimes also sub-gap Andreev
resonances. The energy gap values found from fits of the data ranged
mostly between 7-10 mV. As usual, the gap features were suppressed under
magnetic fields but revealed the tunneling-like conductance background. After
field cycling to 5 or 6 T and back to 0 T, the conductance spectra were always
higher than under zero field cooling, reflecting the negative magnetoresistance
of the manganite barrier. A signature of superparamagnetism was found in the
conductance spectra of junctions with a 12 nm thick LCMO barrier. Observed
critical currents with barrier thickness of 12 nm or more, were shown to be an
artifact due to incomplete milling of one of the superconducting electrodes.Comment: 10 figure
Conformative Filtering for Implicit Feedback Data
Implicit feedback is the simplest form of user feedback that can be used for
item recommendation. It is easy to collect and is domain independent. However,
there is a lack of negative examples. Previous work tackles this problem by
assuming that users are not interested or not as much interested in the
unconsumed items. Those assumptions are often severely violated since
non-consumption can be due to factors like unawareness or lack of resources.
Therefore, non-consumption by a user does not always mean disinterest or
irrelevance. In this paper, we propose a novel method called Conformative
Filtering (CoF) to address the issue. The motivating observation is that if
there is a large group of users who share the same taste and none of them have
consumed an item before, then it is likely that the item is not of interest to
the group. We perform multidimensional clustering on implicit feedback data
using hierarchical latent tree analysis (HLTA) to identify user `tastes' groups
and make recommendations for a user based on her memberships in the groups and
on the past behavior of the groups. Experiments on two real-world datasets from
different domains show that CoF has superior performance compared to several
common baselines
Mode stabilized terrace InGaAsP lasers on semi-insulating InP
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The fabrication involves a selective, single-step liquid phase epitaxial growth process, and a lateral Zn diffusion. Two versions of the terrace lasers are fabricated, and threshold currents as low as 35 mA and 50 mA respectively are obtained. The lasers operate with a stable single lateral mode. High power performance is observed. These lasers are suitable for monolithic integration with other optoelectronic devices
Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration
Low threshold InGaAsP/InP injection lasers on semi-insulating InP substrates have been developed with mirrors fabricated by the microcleavage technique. Miniature suspended bridges containing the laser channels have been formed and then microcleavage has been accomplished by the use of ultrasonic vibrations. Lasers with current thresholds as low as 18 mA with 140-µm cavity length and with 35–45% differential quantum efficiency have been obtained
Proximity induced superconductivity by Bi in topological and films: Evidence for a robust zero energy bound state possibly due to Majorana Fermions
Point contact conductance measurements on topological and
films reveal a signature of superconductivity below 2-3 K. In
particular, critical current dips and a robust zero bias conductance peak are
observed. The latter suggests the presence of zero energy bound states which
could be assigned to Majorana Fermions in an unconventional topological
superconductor. We attribute these novel observations to proximity induced
local superconductivity in the films by small amounts of superconducting Bi
inclusions or segregation to the surface, and provide supportive evidence for
these effects.Comment: Accepted for publication in Physical Review B (Dec. 20, 2011), 15
figures. Version V1: arXiv:1111.3445v1 [cond-mat.supr-con] 15 Nov 201
Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP
Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300-µm cavity length are obtained. MIS depletion mode FET's with n channels on LPE grown InP layer show typical transconductance of 5–10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current
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