7,890 research outputs found
Large Magnetic Susceptibility Anisotropy of Metallic Carbon Nanotubes
Through magnetic linear dichroism spectroscopy, the magnetic susceptibility
anisotropy of metallic single-walled carbon nanotubes has been extracted and
found to be 2-4 times greater than values for semiconducting single-walled
carbon nanotubes. This large anisotropy is consistent with our calculations and
can be understood in terms of large orbital paramagnetism of electrons in
metallic nanotubes arising from the Aharonov-Bohm-phase-induced gap opening in
a parallel field. We also compare our values with previous work for
semiconducting nanotubes, which confirm a break from the prediction that the
magnetic susceptibility anisotropy increases linearly with the diameter.Comment: 4 pages, 4 figure
Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface
Heating of a silicon single crystal introduces a surface roughness. Crystals are heated for periods of 45 sec in the temperature range from 560 to 1150°C. Using ellipsometry, Auger electron spectroscopy, mass spectroscopy and micrography it has been shown that the changes in the ellipsometric parameters are caused by surface roughness which in turn is strongly related to the sublimation of silicon during heating. The relation between surface roughness and temperature of the crystal during the heating is not linear
Terahertz magneto-spectroscopy of transient plasmas in semiconductors
Using synchronized near-infrared (NIR) and terahertz (THz) lasers, we have
performed picosecond time-resolved THz spectroscopy of transient carriers in
semiconductors. Specifically, we measured the temporal evolution of THz
transmission and reflectivity after NIR excitation. We systematically
investigated transient carrier relaxation in GaAs and InSb with varying NIR
intensities and magnetic fields. Using this information, we were able to
determine the evolution of the THz absorption to study the dynamics of
photocreated carriers. We developed a theory based on a Drude conductivity with
time-dependent density and density-dependent scattering lifetime, which
successfully reproduced the observed plasma dynamics. Detailed comparison
between experimental and theoretical results revealed a linear dependence of
the scattering frequency on density, which suggests that electron-electron
scattering is the dominant scattering mechanism for determining the scattering
time. In InSb, plasma dynamics was dramatically modified by the application of
a magnetic field, showing rich magneto-reflection spectra, while GaAs did not
show any significant magnetic field dependence. We attribute this to the small
effective masses of the carriers in InSb compared to GaAs, which made the
plasma, cyclotron, and photon energies all comparable in the density, magnetic
field, and wavelength ranges of the current study.Comment: 8 pages, 9 figures, submitted to Phys. Rev.
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