Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms

Using approximation of dielectric continuum and the Green function method, studied in this work is the influence of electron-phonon interaction on position of the bottom of the ground energy band for electron in the quantum well of a finite depth. Considering the example of a plain nano-heterostructure with a quantum well based on the double heterojunction AlxGa₁₋xAs/GaAs (nanofilm), the authors have calculated the electron energy for a varied thickness of the film. It has been studied the influence of barrier material composition as well as electron-phonon interaction on the electron energ

Temperature changes in the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs

Adduced in this paper are the method and results of theoretical studying the effects of spatial confinement and exciton-phonon interaction on the position and shape of the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs. The heterojunction has been considered as unstrained, the nanosystem is modeled as a rectangular quantum well of a finite depth. Interaction of exciton with optical polarization phonons has been taken into account. Calculated has been the temperature dependence of the energy corresponding to transition into the background excitonic state, and determined have been temperature changes in the absorption coefficient related with this transition. It has been shown that observation of these temperature changes in the energy and absorption coefficient, caused by interaction with optical phonons, is possible in the case of exciton with heavy hole at temperatures above 100 K